A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are
A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.
대표청구항▼
1. A light-emitting device comprising: a light-emitting structure comprising a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode electrically connected to t
1. A light-emitting device comprising: a light-emitting structure comprising a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode electrically connected to the first-conductivity-type semiconductor layer, and a second electrode electrically connected to the second-conductivity-type semiconductor layer;a lens on the light-emitting structure, a bottom plane of the lens facing the light emitting structure having an area less than or equal to a horizontal cross-sectional area of the light-emitting structure;a reflective layer on the lens, wherein the lens and reflective layer are configured to direct light emitted by the light-emitting structure at an incline to a central axis of the lens; anda growth substrate between the lens and the light-emitting structure. 2. The light-emitting device of claim 1, wherein the reflective layer is located opposite the light-emitting structure across the lens. 3. The light-emitting device of claim 1, wherein the reflective layer covers only a portion of an exposed portion of the lens. 4. The light-emitting device of claim 1, wherein the lens and/or the reflective layer are configured such that different paths of light emitted by the light emitting structure are directed far away from one another in a direction in which the light travels. 5. The light-emitting device of claim 1, wherein the reflective layer does not wholly cover a surface of the lens on which the reflective layer is located. 6. The light-emitting device of claim 1, further comprising a reflection plate under the light-emitting structure. 7. The light-emitting device of claim 1, wherein the lens comprises silicon carbide (SiC). 8. The light-emitting device of claim 1, wherein the growth substrate comprises an exposed side surface and the light-emitting device further comprising a blocking layer on the exposed side surface of the growth substrate. 9. The light-emitting device of claim 1, further comprising a light conversion layer surrounding at least a portion of the light-emitting structure. 10. The light-emitting device of claim 8, wherein the light-emitting structure comprises an exposed portion on a side surface of the light-emitting structure and wherein the blocking layer extends on at least a portion of the exposed portion of the light-emitting structure. 11. A light-emitting device comprising: a light-emitting structure;a multi-faceted lens on the light-emitting structure, a bottom plane of the multi-faceted lens facing the light emitting structure having an area less than or equal to a horizontal cross-sectional area of the light emitting structure, anda reflective layer on the multi-faceted lens, wherein the multi-faceted lens and reflective layer are configured to distribute light emitted by the light-emitting structure in a direction inclined with respect to an axis about which the multi-faceted lens is located; anda growth substrate between the multi-faceted lens and the light-emitting structure. 12. The light emitting device of claim 11, wherein the multi-faceted lens includes four lenses, each of which has a quadrisected spherical shape. 13. The light emitting device of claim 11, wherein the multi-faceted lens includes two lenses, each of which has a quadrisected spherical shape. 14. The light emitting device of claim 11, wherein the multi-faceted lens includes eight lenses, each of which has a quadrisected spherical shape. 15. The light emitting device of claim 11, wherein the multi-faceted lens includes a lens having a quadrisected elliptical pillar shape.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.