Capsule for high pressure, high temperature processing of materials and methods of use
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-007/10
C30B-019/08
C07B-033/00
C30B-035/00
C30B-029/38
B01J-021/06
출원번호
US-0657551
(2012-10-22)
등록번호
US-10029955
(2018-07-24)
발명자
/ 주소
Rajeev, Pakalapati Tirumala
Pocius, Douglas Wayne
Kamber, Derrick S.
Coulter, Michael
출원인 / 주소
SLT TECHNOLOGIES, INC.
대리인 / 주소
Patterson & Sheridan, LLP
인용정보
피인용 횟수 :
0인용 특허 :
75
초록▼
An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of proces
An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500° C., respectively.
대표청구항▼
1. A method for preparing a crystalline material in a supercritical fluid, the method comprising: disposing a process capsule into an interior volume of a support capsule, the process capsule comprising a first material and the support capsule comprising a second material;loading at least one fluid
1. A method for preparing a crystalline material in a supercritical fluid, the method comprising: disposing a process capsule into an interior volume of a support capsule, the process capsule comprising a first material and the support capsule comprising a second material;loading at least one fluid into said process capsule;sealing the process capsule, wherein the process capsule is sealed and the support capsule is left unsealed, said at least one fluid generating internal pressure in said sealed process capsule, said support capsule providing structural support for said sealed process capsule, enabling said sealed process capsule to be pressurized to 150 psi;disposing said support capsule containing said sealed process capsule in a high pressure apparatus; andheating the process capsule to a temperature between room temperature and 1500° C. to generate the supercritical fluid within the process capsule to form a crystalline material within the process capsule. 2. The method of claim 1, wherein the crystalline material comprises a [III-]nitride of a croup III element of the periodic table selected from GaN, AlN, InN, an alloy of any of the foregoing, and a combination of any of the foregoing. 3. The method of claim 1, further comprising removing thermal energy from the process capsule, wherein removing energy from the process capsule comprises reducing the temperature of the process capsule. 4. The method of claim 1, wherein sealing the process capsule is selected from welding, tungsten inert gas (TIG) welding, orbital welding, arc welding, e-beam welding, ultrasonic welding, magnetic pulse welding, torch welding, vibratory welding, pinch sealing, brazing, and cold welding. 5. The method of claim 1, wherein disposing said process capsule in said support capsule comprises attaching a cap device by at least one of welding, tungsten inert gas (TIG) welding, orbital welding, arc welding, e-beam welding, ultrasonic welding, magnetic pulse welding, torch welding, vibratory welding, pinch sealing, brazing, cold welding and the use of fasteners, bolts, threads, retaining rings, constant section rings, threaded screws, springs, or wave springs. 6. The method of claim 5, wherein the attaching comprises orbital welding of a butt joint. 7. The method of claim 1, further comprising providing a material disposed between the process capsule and the support capsule, the material selected from steel, stainless steel, carbon steel, nickel, nickel alloy, nickel-chromium and iron alloy, nickel-molybdenum-chromium alloy, polycrystalline nickel alloy, nickel-copper alloy, cobalt-chromium alloy, copper, copper alloy, zirconium, niobium, molybdenum, molybdenum disulfide, tantalum, tungsten, rhenium, platinum, platinum alloy, palladium, iridium, ruthenium, rhodium, rhenium, osmium, tantalum, titanium, vanadium, chromium, iron, iron alloy, gold, silver, aluminum, graphite, boron nitride, beryllium, magnesium, calcium, strontium, barium, lithium, rubidium, cesium, MCxNyOz, wherein M is at least one of aluminum, boron silicon, titanium, vanadium, chromium, yttrium, zirconium, lanthanum, a rare earth metal, hafnium, tantalum, tungsten, and wherein each of x, y, and z is between 0 and 3 (i.e., 0
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