Process for large-scale ammonothermal manufacturing of gallium nitride boules
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-007/10
C30B-029/40
H01L-021/02
B01J-003/00
B01J-003/04
B01J-003/06
B30B-011/00
출원번호
US-0599335
(2015-01-16)
등록번호
US-10036099
(2018-07-31)
발명자
/ 주소
D'Evelyn, Mark P.
Ehrentraut, Dirk
Kamber, Derrick S.
Downey, Bradley C.
출원인 / 주소
SLT TECHNOLOGIES, INC.
대리인 / 주소
Patterson & Sheridan, LLP
인용정보
피인용 횟수 :
0인용 특허 :
108
초록▼
Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus alo
Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.
대표청구항▼
1. A method for growth of a plurality of gallium-containing nitride crystals, the method comprising: placing a plurality of gallium-containing nitride seed plates in a seed rack, each of the plurality of gallium-containing nitride seed plates having a first growth surface and a second growth surface
1. A method for growth of a plurality of gallium-containing nitride crystals, the method comprising: placing a plurality of gallium-containing nitride seed plates in a seed rack, each of the plurality of gallium-containing nitride seed plates having a first growth surface and a second growth surface that are oriented relative to each other to form a wedge shape, whereina wedge angle θ between the first growth surface and the second growth surface is between 1 degree and 60 degrees, andthe first growth surface and the second growth surface have crystallographic orientations that are equivalent to one another to within 5 degrees;placing a source material, a mineralizer, and the seed rack that is supporting the plurality of gallium-containing nitride seed plates in a sealable container;introducing a nitrogen-containing solvent into the sealable container; andprocessing the plurality of gallium-containing nitride seed plates contained in the sealable container, wherein processing the plurality of gallium-containing nitride seed plates comprises growing a crystalline gallium-containing nitride material on the first growth surface and the second growth surface of each of the plurality of gallium-containing nitride seed plates by heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the gallium-containing source material, and the mineralizer disposed within the sealable container to a temperature higher than about 400 degrees Celsius. 2. The method of claim 1, wherein each of the plurality of gallium-containing nitride seed plates has a minimum lateral dimension of three centimeters,the crystallographic orientations of the first surfaces of the plurality of gallium-containing nitride seed plates are equivalent to within 5 degrees, andthe crystallographic orientation of at least two of the plurality of gallium-containing nitride seed plates differs by at least 0.05 degree. 3. The method of claim 1, wherein the wedge angle θ is between 1 degree and 30 degrees, andthe crystallographic orientations of the first surface and the second surface are equivalent to one another to within 2 degrees. 4. The method of claim 1, wherein each of the plurality of gallium-containing nitride seed plates comprises miscut m-plane crystals,the wedge angle θ between 1 degree and 10 degrees, andthe crystallographic orientations of the first surface and the second surface are equivalent to one another to within about 2 degrees. 5. The method of claim 1, further comprising: slicing at least one m-plane-oriented crystal from one or more boule grown on one or more of the plurality of gallium-containing nitride seed plates. 6. The method of claim 5, wherein slicing the at least one m-plane crystal comprises slicing the at least one m-plane crystal at a first angle parallel to the first growth surface of each of the plurality of gallium-containing nitride seed plates and at a second angle parallel to the second growth surface of each of the plurality of gallium-containing nitride seed plates. 7. The method of claim 1, wherein growing the crystalline gallium-containing nitride material on the first growth surface and the second growth surface is performed at a pressure higher than 2 kbar. 8. The method of claim 1, wherein the first growth surface and the second growth surface each have a lateral dimension of at least one centimeter. 9. The method of claim 1, wherein the plurality of gallium-containing nitride seed plates further comprise a first wedge shaped seed plate and a second wedge shaped seed plate, and the crystallographic orientation of the first growth surface of the first wedge shaped seed plate and the crystallographic orientation of the first growth surface or of the second growth surface of the second wedge shaped seed plate differ by at least 0.1 degree and less than 5 degrees. 10. The method of claim 9, wherein the crystallographic orientation of the first growth surfaces and second growth surfaces comprises a {1−1 0 0} plane crystallographic orientation that has a miscut angle towards a [000−1] direction of between 0.05 and 5 degrees and a miscut angle in a direction less than or equal to 1 degree. 11. The method of claim 9, wherein the plurality of gallium-containing nitride seed plates further comprises a first wedge shaped seed plate and a second wedge shaped seed plate, and each of the first and second wedge shaped seed plates are attached to the seed rack in at least two positions. 12. The method of claim 1, wherein the sealable container comprises an autoclave. 13. The method of claim 1, wherein the sealable container comprises a capsule. 14. The method of claim 1, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, andin each of the multiple tiers, gallium-containing nitride seed plates are arranged in one or more rows. 15. The method of claim 1, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, andin each of the multiple tiers, gallium-containing nitride seed plates are arranged radially about a center of the seed rack such that a narrow end of each gallium-containing nitride seed plates faces the center of the seed rack. 16. The method of claim 15, wherein the narrow end of each gallium-containing nitride seed plates arranged in a first centric circle faces a wide end of adjacent gallium-containing nitride seed plate arranged in a second centric circle that is closer to the center of the inner surface of the sealable container. 17. The method of claim 15, wherein two or more gallium-containing nitride seed plates of the plurality of gallium-containing nitride seed plates are arranged in a first centric circle and are staggered with respect to two or more gallium-containing nitride seed plates of the plurality of gallium-containing nitride seed plates that are arranged in a second centric circle that is closer to the center of the inner surface of the sealable container. 18. A method for growing a gallium-containing nitride crystal, comprising: processing a plurality of gallium-containing nitride seed plates disposed within a sealable container, wherein a gallium-containing source material, a nitrogen-containing solvent, a mineralizer, and a seed rack are disposed within the sealable container, and the plurality of gallium-containing nitride seed plates are disposed on the seed rack,the plurality of gallium-containing nitride seed plates each have a first growth surface and a second growth surface, which is opposite to the first growth surface, and each have a crystallographic orientation that comprises a {1−1 0 0} plane crystallographic orientation that has a miscut angle towards a [000−1] direction of between 0.05 and 5 degrees and a miscut angle in a direction less than or equal to 1 degree,the crystallographic orientations of at least two of the plurality of gallium-containing nitride seed plates differ from one another by at least 0.1 degree and less than 5 degrees towards the [000−1] direction, andwherein processing the plurality of gallium-containing nitride seed plates comprises heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the gallium-containing source material, and the mineralizer disposed with the sealable container to a temperature higher than 400 degrees Celsius. 19. The method of claim 18, further comprising: slicing at least one of {1−1 0 0}-plane crystals grown on one or more of the plurality of gallium-containing nitride seed plates. 20. The method of claim 18, wherein the first and second growth surfaces of the plurality of gallium-containing nitride seed plates each have a minimum lateral dimension of one centimeter. 21. The method of claim 18, wherein each of the plurality of gallium-containing nitride seed plates is attached to the seed rack in at least two positions. 22. The method of claim 18, wherein the miscut angle towards the [000−1] direction is between 1 and 5 degrees. 23. The method of claim 18, wherein the miscut angle towards the [000−1] direction is between 0.05 degree and 2 degrees, andthe miscut angle in the direction is less than or equal to 0.5 degree.
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