Semiconductor device and manufacturing method thereof, delamination method, and transferring method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/12
H01L-033/56
H01L-033/62
H01L-029/786
H01L-033/24
H01L-033/44
H01L-021/762
출원번호
US-0397045
(2017-01-03)
등록번호
US-10038012
(2018-07-31)
우선권정보
JP-2002-379578 (2002-12-27)
발명자
/ 주소
Maruyama, Junya
Takayama, Toru
Ohno, Yumiko
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
0인용 특허 :
100
초록▼
A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided.
A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
대표청구항▼
1. A light emitting device comprising: a plastic substrate;a barrier film over the plastic substrate;an insulating film over the barrier film;a transistor over the insulating film; anda light emitting element which is over and electrically connected to the transistor,wherein a top surface of the bar
1. A light emitting device comprising: a plastic substrate;a barrier film over the plastic substrate;an insulating film over the barrier film;a transistor over the insulating film; anda light emitting element which is over and electrically connected to the transistor,wherein a top surface of the barrier film and a bottom surface of the insulating film are adhered to each other with an adhesive material,wherein a metal oxide remains nonuniformly at the bottom surface of the insulating film, andwherein the metal oxide is in contact with the adhesive material. 2. The light emitting device according to claim 1, wherein the barrier film comprises at least one of silicon nitride, silicon oxide, and aluminum oxide. 3. The light emitting device according to claim 1, wherein the barrier film comprises a lamination of silicon nitride and silicon oxide. 4. The light emitting device according to claim 1, wherein the metal oxide has crystallinity. 5. The light emitting device according to claim 1, wherein the light emitting device includes a curved surface. 6. The light emitting device according to claim 1, wherein the metal oxide comprises tungsten. 7. The light emitting device according to claim 1, wherein the metal oxide comprises at least one material selected from Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir. 8. A light emitting device comprising: a plastic substrate;an insulating film over the plastic substrate;a transistor over the insulating film; anda light emitting element which is over and electrically connected to the transistor,wherein a top surface of the plastic substrate and a bottom surface of the insulating film are adhered to each other with an adhesive material,wherein a metal oxide remains nonuniformly at the bottom surface of the insulating film, andwherein the metal oxide is in contact with the adhesive material. 9. The light emitting device according to claim 8, wherein the metal oxide has crystallinity. 10. The light emitting device according to claim 8, wherein the light emitting device includes a curved surface. 11. The light emitting device according to claim 8, wherein the metal oxide comprises tungsten. 12. The light emitting device according to claim 8, wherein the metal oxide comprises at least one material selected from Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir.
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