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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0254724 (2016-09-01) |
등록번호 | US-10043661 (2018-08-07) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 4 인용 특허 : 692 |
A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer contacts and covers the target layer and is constituted by a hydrocarbon-based layer; and depositing an oxide layer on the protective layer
A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer contacts and covers the target layer and is constituted by a hydrocarbon-based layer; and depositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized. The hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.
1. A method for protecting a layer, comprising: providing a substrate having a target layer;depositing a protective layer on the target layer, said protective layer contacting and covering the target layer and constituted by a hydrocarbon-based layer, said hydrocarbon-based layer being formed by pla
1. A method for protecting a layer, comprising: providing a substrate having a target layer;depositing a protective layer on the target layer, said protective layer contacting and covering the target layer and constituted by a hydrocarbon-based layer, said hydrocarbon-based layer being formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant; anddepositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized. 2. The method according to claim 1, wherein the hydrocarbon-based layer is constituted by a hydrocarbon polymer containing silicon and nitrogen. 3. The method according to claim 1, wherein the target layer is a silicon substrate. 4. The method according to claim 1, wherein the oxide layer is constituted by silicon oxide. 5. The method according to claim 1, wherein the oxide layer is constituted by metal oxide. 6. The method according to claim 1, wherein the alkylaminosilane is selected from the group consisting of bisdimethylaminosilane (BDMAS), hexylethylaminosilane (HEAD), tetraethylaminosilane (TEAS), tert-butylaminosilane (TBAS), bistert-butylaminosilane (BTBAS), bisdimethylaminodimethylaminosilane (BDMADMS), heptamethylsilazane (HMDS), trimethysilyldiethlamine (TMSDEA), trimethylsilyldimethlamine (TMSDMA), trimethyltrivinylcycletrisilazane (TMTVCTS), tristrimetylsilylhydroxyamine (TTMSHA), bisdimethylaminomethylsilane (BDMAMS), and dimethylsilyldimethlamine (DMSDMA). 7. The method according to claim 1, wherein the protective layer consists of the hydrocarbon-based layer. 8. The method according to claim 1, wherein a portion of the protective layer which is oxidized when depositing the oxide layer on the protective layer becomes a part of the oxide layer. 9. The method according to claim 8, wherein the step of depositing the oxide layer continues until substantially the entire protective layer is oxidized. 10. The method according to claim 9, wherein a thickness of the protective layer deposited before depositing the oxide layer is more than zero but less than about 5 nm. 11. The method according to claim 10, wherein a thickness of the oxide layer including the oxidized protective layer is about 1 nm to about 100 nm. 12. The method according to claim 1, wherein the oxide layer is deposited by PEALD. 13. The method according to claim 1, wherein the step of providing the substrate, the step of depositing the protective layer, and the step of depositing the oxide layer are conducted in the same reaction chamber.
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