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Enhancement-mode III-nitride devices

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/66
  • H01L-029/778
  • H01L-029/20
  • H01L-027/06
  • H01L-027/088
  • H01L-023/535
  • H01L-029/417
  • H01L-029/40
  • H01L-029/423
  • H01L-021/8252
  • H01L-023/00
  • H01L-029/51
  • H01L-023/29
  • H01L-023/31
  • H01L-021/02
출원번호 US-0440404 (2017-02-23)
등록번호 US-10043898 (2018-08-07)
발명자 / 주소
  • Lal, Rakesh K.
출원인 / 주소
  • Transphorm Inc.
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 0  인용 특허 : 183

초록

A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the III-N structure, with a recess formed through the insulator layer in a gate region of t

대표청구항

1. A half bridge, comprising: a III-N structure including a conductive channel therein;a first gate electrode and a second gate electrode, the first and second gate electrodes being on the III-N structure;a first source contact and a drain contact, the first source contact and the drain contact elec

이 특허에 인용된 특허 (183)

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    AI-Helper
    안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
    ※ AI-Helper는 부적절한 답변을 할 수 있습니다.

    선택된 텍스트