A multi-layered polishing pad arrangement includes a first polishing pad layer having a first top and a first bottom major surface, a second polishing pad layer having a second top and a second bottom major surface, and a coupling arrangement disposed between the first bottom surface and the second
A multi-layered polishing pad arrangement includes a first polishing pad layer having a first top and a first bottom major surface, a second polishing pad layer having a second top and a second bottom major surface, and a coupling arrangement disposed between the first bottom surface and the second top surface. The thickness of each of the first and second polishing pad layer ranges between 0.125 mm and 10 mm.
대표청구항▼
1. A system for polishing a substrate: the system comprising: a carrier assembly configured to receive and holding a substrate;a polishing pad comprising: a base layer having a first major surface and a second major surface opposite the first major surface, wherein the first major surface includes a
1. A system for polishing a substrate: the system comprising: a carrier assembly configured to receive and holding a substrate;a polishing pad comprising: a base layer having a first major surface and a second major surface opposite the first major surface, wherein the first major surface includes a plurality of cavities that extend into the base layer from the first major surface; anda platen, wherein the polishing pad is coupled to the platen such that the second major surface is the working surface; anda polishing solution disposed between the polishing pad and the substrate, wherein the polishing solution comprises: a fluid component, andceramic abrasive composites, wherein the ceramic abrasive composites comprise individual abrasive particles dispersed in a porous ceramic matrix, and wherein the ceramic abrasive composites are dispersed in the fluid component; andwherein the system is configured such that the polishing pad is movable relative to the substrate to carry out a polishing operation. 2. The system for polishing a substrate of claim 1, wherein the base layer comprises polypropylene. 3. The system for polishing a substrate of claim 2, wherein the base layer has a thickness of between 0.125 mm and 10 mm. 4. The system for polishing a substrate of claim 1, wherein the individual abrasive particles are uniformly distributed throughout the porous ceramic matrix. 5. The system for polishing a substrate of claim 4, wherein the abrasive particles comprise diamond, cubic boron nitride, fused aluminum oxide, ceramic aluminum oxide, heated treated aluminum oxide, silicon carbide, boron carbide, alumina zirconia, iron oxide, ceria, or garnet. 6. The system for polishing a substrate of claim 5, wherein the abrasive particles comprise diamond. 7. The system for polishing a substrate of claim 5, wherein the ceramic abrasive composites have an average particle size of less than 500 microns. 8. The system for polishing a substrate of claim 5, wherein the average size of the ceramic abrasive composites is at least about 5 times the average size of the abrasive particles. 9. The system for polishing a substrate of claim 5, wherein the porous ceramic matrix comprises glass comprising aluminum oxide, boron oxide, silicon oxide, magnesium oxide, sodium oxide, manganese oxide, or zinc oxide. 10. The system for polishing a substrate of claim 5, wherein the concentration of the abrasive composites in the fluid component is between 0.065% and 6.5% by weight. 11. The system for polishing a substrate of claim 5, wherein the porous ceramic matrix comprises at least 50% by weight glassy ceramic material. 12. The system for polishing a substrate of claim 5, wherein the porous ceramic matrix consists essentially of glassy ceramic material. 13. The system for polishing a substrate of claim 1, wherein the second major surface is a continuous surface. 14. The system for polishing a substrate of claim 1, wherein the second major surface is a nearly continuous surface.
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