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Edge seal for lower electrode assembly

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/67
  • H01L-021/66
  • H01J-037/32
출원번호 US-0141079 (2013-12-26)
등록번호 US-10090211 (2018-10-02)
발명자 / 주소
  • Gaff, Keith William
  • Busche, Matthew
  • Ricci, Anthony
  • Povolny, Henry S.
  • Stevenot, Scott
출원인 / 주소
  • LAM RESEARCH CORPORATION
인용정보 피인용 횟수 : 0  인용 특허 : 106

초록

A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled base plate, an upper plate above the base plate, and an annular mounting groove surrounding a bond layer located between the base plate and the upper plate. The

대표청구항

1. A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber comprising: a temperature controlled base plate, an upper plate above the base plate, and an annular mounting groove surrounding a bond layer located between the base plate and the upper plat

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