최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0792290 (2017-10-24) |
등록번호 | US-10128086 (2018-11-13) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 0 인용 특허 : 856 |
Exemplary methods for treating a silicon-containing substrate may include flowing plasma effluents of a hydrogen-containing precursor into a processing region of the semiconductor processing chamber. A silicon-containing substrate may be positioned within the processing region and include a trench f
Exemplary methods for treating a silicon-containing substrate may include flowing plasma effluents of a hydrogen-containing precursor into a processing region of the semiconductor processing chamber. A silicon-containing substrate may be positioned within the processing region and include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide exposing a portion of the silicon-containing substrate. The methods may include contacting the exposed portion of the silicon-containing substrate with the plasma effluents. The methods may include flowing an oxygen-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the exposed portion of the silicon-containing substrate with the oxygen-containing precursor. The methods may also include converting the exposed portion of the silicon-containing substrate to silicon oxide.
1. A method of treating a silicon-containing substrate, the method comprising: flowing a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber;forming a plasma within the remote plasma region to generate plasma effluents of the hydrogen-containing precursor;
1. A method of treating a silicon-containing substrate, the method comprising: flowing a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber;forming a plasma within the remote plasma region to generate plasma effluents of the hydrogen-containing precursor;flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein a silicon-containing substrate is positioned within the processing region, and wherein the silicon-containing substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide exposing a portion of the silicon-containing substrate;contacting the exposed portion of the silicon-containing substrate with the plasma effluents;flowing an oxygen-containing precursor into the processing region of the semiconductor processing chamber;contacting the exposed portion of the silicon-containing substrate with the oxygen-containing precursor; andconverting the exposed portion of the silicon-containing substrate to silicon oxide. 2. The method of treating a silicon-containing substrate of claim 1, further comprising laterally etching the layers of silicon nitride from sidewalls of the trench subsequent the converting. 3. The method of treating a silicon-containing substrate of claim 2, wherein the etching at least partially removes the converted silicon oxide. 4. The method of treating a silicon-containing substrate of claim 2, further comprising repeating the method for at least one additional cycle. 5. The method of treating a silicon-containing substrate of claim 4, wherein the silicon-containing substrate is etched less than 5 nm during the method. 6. The method of treating a silicon-containing substrate of claim 1, wherein the exposed portion of the silicon-containing substrate converted to silicon oxide is characterized by a thickness of silicon oxide less than or about 5 nm. 7. The method of treating a silicon-containing substrate of claim 1, wherein the exposed portion of the silicon-containing substrate converted to silicon oxide is beneath a layer of native oxide formed on the silicon-containing substrate. 8. The method of treating a silicon-containing substrate of claim 1, wherein the method is performed at a chamber operating pressure of less than or about 10 Torr. 9. The method of treating a silicon-containing substrate of claim 1, wherein the method is performed at a chamber temperature greater than or about 100° C. 10. The method of treating a silicon-containing substrate of claim 1, wherein the oxygen-containing precursor is water vapor. 11. The method of treating a silicon-containing substrate of claim 10, wherein the water vapor is flowed into the processing region without plasma enhancement. 12. The method of treating a silicon-containing substrate of claim 1, wherein the hydrogen-containing precursor is hydrogen. 13. A method of treating a substrate, the method comprising: forming a plasma within a remote plasma region of a semiconductor processing chamber containing a hydrogen-containing precursor to generate plasma effluents of the hydrogen-containing precursor;flowing the plasma effluents into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide exposing a portion of the substrate;contacting the exposed portion of the substrate with the plasma effluents;flowing water vapor into the processing region of the semiconductor processing chamber;contacting the exposed portion of the substrate with the water vapor; andforming a layer of oxide on the exposed portion of the substrate. 14. The method of treating a substrate claim 13, further comprising laterally etching the layers of silicon nitride from sidewalls of the trench subsequent forming the layer of oxide. 15. The method of treating a substrate of claim 14, wherein the etching at least partially removes the layer of oxide. 16. The method of treating a substrate of claim 14, further comprising repeating the method. 17. The method of treating a substrate of claim 16, wherein repeating flowing the plasma effluents into the processing region of the semiconductor processing chamber comprises contacting exposed surfaces of the layers of silicon oxide with the plasma effluents. 18. The method of treating a substrate of claim 17, wherein the plasma effluents remove fluorine from the layers of silicon oxide. 19. The method of treating a substrate of claim 13, wherein the water vapor is flowed into the processing region without plasma enhancement. 20. The method of treating a substrate of claim 13, wherein the method is performed at a chamber temperature greater than or about 200° C.
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