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An integrated circuit device having a substrate including a dielectric layer is patterned with a set of conductive line trenches. Each conductive line trench of the conductive line pattern having parallel vertical sidewalls and a horizontal bottom. A metal fills the set of conductive line trenches,

An integrated circuit device having a substrate including a dielectric layer is patterned with a set of conductive line trenches. Each conductive line trench of the conductive line pattern having parallel vertical sidewalls and a horizontal bottom. A metal fills the set of conductive line trenches, wherein the metal fill is created by an anneal and reflow process. A liner which is an alloy of the metal and a selected element formed at interfaces of the metal layer and a surface of the dielectric, created simultaneously with the metal fill by the anneal and reflow process.

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1. An integrated circuit device comprising: a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom, wherein the vertical sidewalls and horizontal bottoms have an element enriche

1. An integrated circuit device comprising: a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom, wherein the vertical sidewalls and horizontal bottoms have an element enriched surface layer in which the concentration of a selected element is increased relative to a remainder of the dielectric layer;a metal entirely filling the set of conductive line trenches forming a set of conductive lines, each conductive line directly contacting the element enriched surface; anda liner which is an alloy of the metal and the selected element formed in the element enriched surface layer. 2. The device as recited in claim 1, wherein the metal layer is comprised of aluminum and the selected element is nitrogen. 3. The device as recited in claim 2, wherein the liner is comprised of an alloy selected from the group consisting of AlN and Al(N, Si). 4. The device as recited in claim 1, wherein the metal is a metal selected from the group consisting of Al, Co, Ru, Ir, Rh, and Ni. 5. The device as recited in claim 1, wherein the selected element is selected from the group consisting of N, Si, C, and O. 6. The device as recited in claim 1, wherein a cross-section of each of the set of conductive lines is rectangular. 7. The device as recited in claim 1, wherein the liner is comprised of an alloy AB wherein A is a metal selected from the group consisting of Al, Co, Ru, Ir, Rh, and Ni and B is a selected element selected from the group consisting of N, Si, C, and O. 8. The device as recited in claim 1, wherein the liner is a barrier layer to diffusion. 9. The device as recited in claim 1, wherein side and bottom surfaces of each of the set of conductive lines contact the element enriched surface layer.