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Pulsed level shift and inverter circuits for GaN devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H02M-003/158
  • H02J-007/00
  • H02M-001/088
  • H03K-003/012
  • H01L-029/20
  • H03K-017/10
  • H03K-019/0185
  • H01L-025/07
  • H02M-003/157
  • H03K-003/356
  • H01L-027/088
  • H01L-023/528
  • H01L-029/10
  • H01L-029/40
  • H01L-029/417
  • H02M-001/00
  • H02M-003/155
출원번호 US-0219248 (2016-07-25)
등록번호 US-10135275 (2018-11-20)
발명자 / 주소
  • Kinzer, Daniel M.
  • Sharma, Santosh
  • Zhang, Ju Jason
출원인 / 주소
  • NAVITAS SEMICONDUCTOR INC.
대리인 / 주소
    Kilpatrick Townsend & Stockton
인용정보 피인용 횟수 : 0  인용 특허 : 53

초록

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Va

대표청구항

1. A level shift circuit, comprising: a first inverter circuit comprising: a first input terminal;a first output terminal;a first GaN-based transistor having a gate coupled to the first input terminal, a drain coupled to the first output terminal, and a source coupled to a ground; anda first pull up

이 특허에 인용된 특허 (53)

  1. Ribarich, Tom; Zhang, Jason, Boost converter with zero voltage switching.
  2. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Bootstrap capacitor charging circuit for GaN devices.
  3. Bedell, Stephen W.; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, Breakdown voltage multiplying integration scheme.
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  5. Cao, Yiqun; Rupp, Andreas; Glaser, Ulrich, Combined ESD active clamp for cascaded voltage pins.
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  7. Osame, Mitsuaki; Ueno, Tatsuro, Data latch circuit, driving method of the data latch circuit, and display device.
  8. Li, Jason Yuxin; Wohlmuth, Walter A.; Muthukrishnan, Swaminathan; Iversen, Christian Rye; Peachey, Nathaniel, Depletion-mode field effect transistor based electrostatic discharge protection circuit.
  9. Barsanti Andrea (Pisa ITX) Diazzi Claudio (Milan ITX) Vio Fabio (Milan ITX), Device for generating a reference voltage for a switching circuit including a capacitive bootstrap circuit.
  10. Kelly, David W., Differential high voltage level shifter.
  11. Leman Brooks R. (Santa Clara CA) Balakrishnan Balu (Saratoga CA), Dual threshold differential discriminator.
  12. Antonino Schillaci IT; Antonio Grimaldi IT; Giuseppe Ferla IT, Edge termination of semiconductor devices for high voltages with resistive voltage divider.
  13. Ping, Andrew T.; Ogbonnah, Dominic J., Electrostatic discharge protection circuit for compound semiconductor devices and circuits.
  14. Lidow, Alexander; Beach, Robert; Nakata, Alana; Cao, Jianjun; Zhao, Guang Yuan; Strittmatter, Robert; Liu, Fang Chang, Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same.
  15. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, GaN circuit drivers for GaN circuit loads.
  16. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Half bridge driver circuits.
  17. Kinzer, Daniel Marvin; Sharma, Santosh; Zhang, Ju, Half bridge driver circuits.
  18. Kinzer, Daniel Marvin; Sharma, Santosh; Zhang, Ju; Giandalia, Marco; Ribarich, Thomas, Half bridge driver circuits.
  19. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Half bridge power conversion circuits using GaN devices.
  20. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Half bridge power conversion circuits using GaN devices.
  21. Liu Rui ; Gu Wen-Jian, Half-bridge zero-voltage-switched PWM flyback DC/DC converter.
  22. Wendt, Michael; Thoma, Lenz; Wicht, Bernhard, High side/low side driver device for switching electrical loads.
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  24. Newlin, Trevor M., High speed tri-level input power converter gate driver.
  25. Bahramian, Tony, Highly efficient III-nitride power conversion circuit.
  26. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Integrated level shifter.
  27. Kinzer, Daniel Marvin; Sharma, Santosh; Zhang, Ju, Integrated level shifter.
  28. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Level shift and inverter circuits for GaN devices.
  29. Kihara, Seiichiro, Level shift circuit.
  30. Li Yushan ; Stephen L. Wong, Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS.
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  36. Rupp, Andreas; Cao, Yiqun; Glaser, Ulrich, Noise-tolerant active clamp with ESD protection capability in power up mode.
  37. Gilliam Gary, On-chip substrate regular test mode.
  38. Smith,Mark; Qiao,Chongming; Condido,Vincent; Amironi,Reza; Asvadi,Amir, Over voltage protection scheme for synchronous buck converter.
  39. Ivanov Vadim V. ; Zhang Shilong ; Johnson Gregory H., Overload recovery circuit and method.
  40. Kim, Ho-jung; Shin, Jai-kwang; Chung, U-in; Choi, Hyun-sik, Power management chips and power management devices including the same.
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  43. Truong, Keith; Schadt, John; Lall, Ravi; Andrews, William, Programmable buffer.
  44. Kinzer, Daniel M.; Sharma, Santosh; Zhang, Ju Jason, Pulsed level shift and inverter circuits for GaN devices.
  45. Yamamoto, Masahiro, Semiconductor circuit.
  46. Weis, Rolf; Hirler, Franz; Feldtkeller, Martin; Deboy, Gerald; Stecher, Matthias; Willmeroth, Armin, Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices.
  47. Kohno, Kenji, Semiconductor device including a surge protecting circuit.
  48. Kitamoto, Ayako; Matsumiya, Masato; Eto, Satoshi; Takita, Masato; Nakamura, Toshikazu; Kanou, Hideki; Kawabata, Kuninori; Hasegawa, Masatomo; Koga, Toru; Ishii, Yuki, Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit.
  49. Tanase, Hironobu; Ichimura, Isao, Semiconductor laser drive circuit.
  50. Zhang, Ju Jason, Soft switched single stage wireless power transfer.
  51. Ni, Liqin, Solid-state lighting apparatus and methods using switched energy storage.
  52. Forghani-Zadeh, Hassan Pooya; Huertas-Sanchez, Luis A., System and apparatus for driver circuit for protection of gates of GaN FETs.
  53. Tobita Youichi (Hyogo JPX) Kihara Yuji (Hyogo JPX), Test apparatus for static-type semiconductor memory devices.
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