Method for rapid laser drilling of holes in glass and products made therefrom
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B23K-026/384
B23K-026/402
C03B-033/09
B23K-026/04
C03B-033/02
C03C-015/00
B32B-017/06
C03C-017/00
B23K-026/00
B23K-026/06
B23K-026/38
B23K-026/0622
C09K-013/00
출원번호
US-0251453
(2016-08-30)
등록번호
US-10144093
(2018-12-04)
발명자
/ 주소
Marjanovic, Sasha
Piech, Garrett Andrew
Shanmugam, Shyamala
Pons Siepermann, Carlos Alberto
Tsuda, Sergio
Varga, Zsigmond
Wagner, Robert Stephen
출원인 / 주소
Corning Incorporated
대리인 / 주소
McGroarty, John P.
인용정보
피인용 횟수 :
0인용 특허 :
117
초록▼
Forming holes in a material includes focusing a pulsed laser beam into a laser beam focal line oriented along the beam propagation direction and directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line
Forming holes in a material includes focusing a pulsed laser beam into a laser beam focal line oriented along the beam propagation direction and directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a defect line along the laser beam focal line within the material, and translating the material and the laser beam relative to each other, thereby forming a plurality of defect lines in the material, and etching the material in an acid solution to produce holes greater than 1 micron in diameter by enlarging the defect lines in the material. A glass article includes a stack of glass substrates with formed holes of 1-100 micron diameter extending through the stack.
대표청구항▼
1. A method of forming through-holes in a material comprising: forming a plurality of damage tracks into the material by focusing a pulsed laser beam into a laser beam focal line oriented along a beam propagation direction and directing the laser beam focal line into the material, wherein the damage
1. A method of forming through-holes in a material comprising: forming a plurality of damage tracks into the material by focusing a pulsed laser beam into a laser beam focal line oriented along a beam propagation direction and directing the laser beam focal line into the material, wherein the damage tracks have a diameter of less than 5 μm; andetching the material to enlarge the plurality of damage tracks to produce a plurality of through-holes in the material so that (i) the plurality of through-holes comprise an opening in a first surface of the material and an opening in a second surface of the material and (ii) the plurality of through-holes have a circularity of less than 5 μm at at least one of the first surface and the second surface. 2. The method of claim 1, wherein the material is transparent to at least one wavelength in a range from 390 nm to 700 nm. 3. The method of claim 1, wherein the material can transmit at least 70% of at least one wavelength in a range from 390 nm to 700 nm. 4. The method of claim 1, further comprising mechanically agitating the acid solution during etching. 5. The method of claim 1, wherein the plurality of through-holes have a diameter of 20 μm or less and a spacing between adjacent through-holes of at least 10 microns. 6. The method of claim 5, wherein: the plurality of through-holes comprise a waist located between the opening in the first surface and the opening in the second surface,a diameter of the waist is at least 50% of the diameter of the opening in the first surface or the opening in the second surface, anda difference between a diameter of the opening in the first surface and a diameter of the opening in the second surface is 3 μm or less. 7. The method of claim 1, wherein the acid solution comprises a surfactant. 8. The method of claim 1, wherein the damage tracks are made in an aperiodic pattern. 9. The method of claim 1, wherein the pulsed laser beam produces at least 500 damage tracks/sec. 10. The method of claim 1, wherein the pulsed laser beam produces at least 1,000 damage tracks/sec. 11. The method of claim 1, wherein the material is a glass. 12. The method of claim 1, wherein the material is fused silica. 13. The method of claim 1, wherein the etching is at a rate of less than about 5 microns/min. 14. The method of claim 1, wherein the pulsed laser beam has a burst energy density in a range from 25 microJoules/mm of line focus to 125 microJoules/mm of line focus. 15. The method of claim 1, wherein pulses of the pulsed laser beam are produced in bursts of at least two pulses separated by a duration in a range of between about 1 nsec and about 50 nsec, and wherein a burst repetition frequency of the bursts is in a range of between about 1 kHz and about 650 kHz. 16. The method of claim 15, wherein the at least two pulses are separated by a duration of 20 nsec plus or minus 2 nsec. 17. The method of claim 1, wherein the damage tracks have a diameter of less than 4 μm. 18. The method of claim 1, wherein the pulsed laser beam has a wavelength λ. 19. The method of claim 1, wherein focusing the pulsed laser beam into the laser beam focal line comprises passing the pulsed laser beam through an optical arrangement, wherein the optical arrangement comprises a optical element that is illuminated in a ring-shaped region. 20. The method of claim 1, wherein a Thiele modulus of the etching is less than or equal to 2. 21. The method of claim 1, wherein at least a portion of the plurality of through-holes have a diameter of 30 μm or less. 22. The method of claim 1, wherein a difference between a diameter of the opening in the first surface and a diameter of the opening in the second surface is 3 μm or less. 23. The method of claim 1, wherein the plurality of through-holes have an aspect ratio of 3:1 or greater. 24. The method of claim 1, where the focal line is created by using a Bessel beam or a Gauss-Bessel beam. 25. The method of claim 1, wherein focusing the pulsed laser beam into the laser beam focal line comprises passing the pulsed laser beam through an optical arrangement, wherein the optical arrangement comprises an axicon. 26. The method of claim 1, wherein at least a portion of the plurality of through-holes comprise: a waist located between the opening in the first surface and the opening in the second surface,a diameter of the waist of at least 50% of the diameter of the opening in the first surface,a diameter of 100 μm or less at the first surface, andan aspect ratio of the substrate thickness to the diameter at the first surface of 1:1 or greater.
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