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특허 상세정보

Techniques for low temperature direct graphene growth on glass

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B32B-038/10    C23C-014/48    C23C-014/22    C23C-016/06    C23C-016/24    C23C-016/50    C23C-016/56    C01B-032/186    C01B-032/194    B32B-043/00   
출원번호 US-0172511 (2016-06-03)
등록번호 US-10145005 (2018-12-04)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Nixon & Vanderhye P.C.
인용정보 피인용 횟수 : 0  인용 특허 : 172
초록

Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be re...

대표
청구항

1. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate;forming a layer comprising Ni on the layer comprising Si;engineering stress in the layer comprising Ni via He ion implantation and annealing;following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; andmechanically removing the layer comprising Ni and the graphene on the major surface ...

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