Techniques for low temperature direct graphene growth on glass
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B32B-038/10
C23C-014/48
C23C-014/22
C23C-016/06
C23C-016/24
C23C-016/50
C23C-016/56
C01B-032/186
C01B-032/194
B32B-043/00
출원번호
US-0172511
(2016-06-03)
등록번호
US-10145005
(2018-12-04)
발명자
/ 주소
Veerasamy, Vijayen S.
출원인 / 주소
Guardian Glass, LLC
대리인 / 주소
Nixon & Vanderhye P.C.
인용정보
피인용 횟수 :
0인용 특허 :
172
초록▼
Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantatio
Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be removed via tape and/or the like, leaving graphene on the substrate. Optionally, a silicon-inclusive layer may be formed between the Ni-inclusive layer and the substrate. Products including such articles, and/or methods of making the same, also are contemplated.
대표청구항▼
1. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate;forming a layer comprising Ni on the layer comprising Si;engineering stress in the layer comprising Ni via He ion impl
1. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate;forming a layer comprising Ni on the layer comprising Si;engineering stress in the layer comprising Ni via He ion implantation and annealing;following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; andmechanically removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the substrate on the layer comprising Si following the mechanical removal, in making the graphene-inclusive thin film,wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C., the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. 2. The method of claim 1, wherein the plasma-related chemical vapor deposition is remote plasma-assisted chemical vapor deposition. 3. The method of claim 1, wherein the plasma-related chemical vapor deposition is plasma-enhanced chemical vapor deposition. 4. The method of claim 1, wherein the plasma-related chemical vapor deposition uses acetylene and hydrogen as separate source gasses. 5. The method of claim 1, wherein the layer comprising Ni is formed by e-beam deposition. 6. The method of claim 1, wherein the layer comprising Ni is 200-300 nm thick. 7. The method of claim 1, wherein the mechanical removal is delamination. 8. The method of claim 1, wherein the mechanical removal removes at least some of the graphene on the major surface of the layer comprising Ni closest the substrate. 9. The method of claim 1, wherein the layer comprising Si is oxided. 10. The method of claim 1, wherein the layer comprising Si is 10-300 nm thick. 11. The method of claim 1, wherein the layer comprising Ni is formed on the substrate at least partially under vacuum, and He ion implantation also is performed at least partially under vacuum. 12. The method of claim 11, wherein the annealing and/or the graphene growing is performed at least partially under vacuum. 13. The method of claim 11, wherein the at least partial vacuum is maintained from formation of the layer comprising Ni through graphene growth. 14. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Ni on the substrate;implanting He ions in the layer comprising Ni;heating the layer comprising Ni with the He ions implanted therein, the implanting and the heating creating a desired stress profile in the layer comprising Ni;following creation of the desired stress profile in the layer comprising Ni, providing a hydrocarbon source gas and a separate hydrogen source gas to a remote plasma-assisted chemical vapor deposition apparatus to facilitate graphene growth on major surfaces of the layer comprising Ni opposite the substrate and adjacent the substrate; anddelaminating the layer comprising Ni from the substrate, the delamination removing the layer comprising Ni from the substrate together with graphene grown on the major surface of the layer comprising Ni opposite the substrate while leaving on the substrate graphene grown on the major surface of the layer comprising Ni adjacent the substrate, in making the graphene-inclusive thin film,wherein the heating is performed, and graphene is grown, at 450-550 degrees C., the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. 15. The method of claim 14, wherein the layer comprising Ni is formed by e-beam deposition. 16. The method of claim 14, further comprising forming a silicon-inclusive layer on the substrate, the layer comprising Ni being formed on the silicon-inclusive layer. 17. The method of claim 16, wherein the silicon-inclusive layer is 10-300 nm thick. 18. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising: forming a buffer layer on the substrate;forming a metal catalyst layer on the buffer layer;pre-engineering stress in the metal catalyst layer via He ion implantation and thermal annealing;following the pre-engineering of stress, growing graphene on both major surfaces of the metal catalyst layer using a remote plasma-assisted chemical vapor deposition apparatus operating in connection with separate hydrocarbon and hydrogen gasses provided at different flow rates;removing the metal catalyst layer from the substrate together with graphene grown on the major surface of the metal catalyst layer opposite the substrate, while leaving on the substrate graphene grown on the major surface of the metal catalyst layer adjacent the substrate, in making the graphene-inclusive thin film; andwherein the annealing is performed, and the graphene is grown, at 450-550 degrees C., the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. 19. A method of making a coated article including a graphene-inclusive film supported by a glass substrate, the method comprising: forming a layer comprising Si on the glass substrate;forming a layer comprising Ni on the glass substrate and on the layer comprising Si;engineering stress in the layer comprising Ni via He ion implantation and annealing;following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni; andremoving the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the glass substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the glass substrate on the layer comprising Si following the removal, in making the graphene-inclusive film,wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C., the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes.
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