|국가/구분||United States(US) Patent 등록|
|국제특허분류(IPC7판)||B32B-038/10 C23C-014/48 C23C-014/22 C23C-016/06 C23C-016/24 C23C-016/50 C23C-016/56 C01B-032/186 C01B-032/194 B32B-043/00|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 0 인용 특허 : 172|
Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be re...
1. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate;forming a layer comprising Ni on the layer comprising Si;engineering stress in the layer comprising Ni via He ion implantation and annealing;following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; andmechanically removing the layer comprising Ni and the graphene on the major surface ...