A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first condu
A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure. The second light-emitting structure may include island structures that are isolated from direct contact with each other and a bridge structure between adjacent island structures.
대표청구항▼
1. A light-emitting device, comprising: a first light-emitting structure and a second light-emitting structure on a phototransmissive substrate, the first light-emitting structure and the second light-emitting structure isolated from direct contact with each other, the first light-emitting structure
1. A light-emitting device, comprising: a first light-emitting structure and a second light-emitting structure on a phototransmissive substrate, the first light-emitting structure and the second light-emitting structure isolated from direct contact with each other, the first light-emitting structure and the second light-emitting structure each including a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer; and an inter-structure conductive layer configured to electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure, wherein the second light-emitting structure includes a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure,wherein the finger structure is restricted to the second light-emitting structure,wherein the first light-emitting structure and the second light-emitting structure each include an etched structure, the etched structure including etched portions of the second conductivity-type semiconductor layer, the active layer, and the first conductivity-type semiconductor layer and a plurality of mesa structures partially defined by the etched structure,wherein the etched structure at least partially defines the finger structure. 2. The light-emitting device of claim 1, further comprising: a first contact electrode on the second conductivity-type semiconductor layer of the first light-emitting structure, the first contact electrode electrically connected to the second conductivity-type semiconductor layer; anda first insulation pattern configured to cover at least a portion of the first contact electrode, least a portion of the first light-emitting structure, and at least a portion of the second light-emitting structure,wherein a thickness of a particular portion of the first insulation pattern on the first contact electrode is less than a thickness of a separate portion of the first insulation pattern on a particular portion of the second conductivity-type semiconductor layer, the particular portion of the second conductivity-type semiconductor layer isolated from direct contact with the first contact electrode. 3. The light-emitting device of claim 2, wherein, the first insulation pattern includes a lower insulation pattern and an upper insulation pattern,the lower insulation pattern at least partially covers the second conductivity-type semiconductor layer, andthe upper insulation pattern covers at least one portion of the second conductivity-type semiconductor layer, the lower insulation pattern, and the first contact electrode, respectively. 4. The light-emitting device of claim 3, wherein the lower insulation pattern isolated from direct contact with from the first contact electrode. 5. The light-emitting device of claim 4, wherein the upper insulation pattern includes a plurality of grooves between the lower insulation pattern and the first contact electrode. 6. The light-emitting device of claim 1, wherein the inter-structure conductive layer is configured to cover an entirety of a plurality of side surfaces of the first light-emitting structure and the second light-emitting structure, such that at least a portion of the inter-structure conductive layer is between the first light-emitting structure and the second light-emitting structure. 7. The light-emitting device of claim 6, wherein the inter-structure conductive layer includes at least one of Ag and Al. 8. A light-emitting device, comprising: a phototransmissive substrate; anda first light-emitting structure and a second light-emitting structure on the phototransmissive substrate, the first light-emitting structure and the second light-emitting structure isolated from direct contact with each other in a first direction, the first direction parallel to a surface of the phototransmissive substrate, the first light-emitting structure and the second light-emitting structure each including a first conductivity-type semiconductor layer,an active layer on the first conductivity-type semiconductor layer, anda second conductivity-type semiconductor layer on the active layer,wherein the first conductivity-type semiconductor layer of the first light-emitting structure and the second conductivity-type semiconductor layer of the second light-emitting structure are configured to be electrically connected to each other, andwherein the second light-emitting structure includes a plurality of island structures that are isolated from direct contact with each other in a second direction, the second direction parallel to the surface of the phototransmissive substrate and intersecting with the first direction, anda bridge structure between adjacent island structures of the plurality of island structures. 9. The light-emitting device of claim 8, wherein the adjacent island structures are connected to each other via the bridge structure. 10. The light-emitting device of claim 8, wherein the first light-emitting structure has an individual island structure. 11. The light-emitting device of claim 8, wherein a first edge of the bridge structure and a plurality of first edges of the plurality of island structures are collinear. 12. The light-emitting device of claim 8, wherein a sum of a length of the bridge structure and a plurality of lengths of the plurality of island structures along the second direction is substantially identical to a length of the first light-emitting structure along the second direction. 13. A light-emitting device, comprising: a first light-emitting structure on a phototransmissive substrate; anda second light-emitting structure on the phototransmissive substrate, the second light-emitting structure isolated from direct contact with the first light-emitting structure, the second light-emitting structure including a plurality of island structures that are isolated from direct contact with each other, and a bridge structure between adjacent island structures of the plurality of island structures,wherein the first light-emitting structure and the second light-emitting structure are configured to be electrically connected to each other. 14. The light-emitting device of claim 13, wherein, the first light-emitting structure and the second light-emitting structure each include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer, andthe first conductivity-type semiconductor layer of the first light-emitting structure and the second conductivity-type semiconductor layer of the second light-emitting structure are configured to be electrically connected to each other. 15. The light-emitting device of claim 14, further comprising: an inter-structure conductive layer configured to electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. 16. The light-emitting device of claim 15, further comprising: a first contact electrode on the second conductivity-type semiconductor layer of the first light-emitting structure, the first contact electrode electrically connected to the second conductivity-type semiconductor layer; anda first insulation pattern configured to cover at least a portion of the first contact electrode, at least a portion of the first light-emitting structure, and at least a portion of the second light-emitting structure,wherein a thickness of a particular portion of the first insulation pattern on the first contact electrode is less than a thickness of a separate portion of the first insulation pattern on a particular portion of the second conductivity-type semiconductor layer, the particular portion of the second conductivity-type semiconductor layer isolated from direct contact with the first contact electrode. 17. The light-emitting device of claim 16, wherein, the first insulation pattern includes a lower insulation pattern and an upper insulation pattern,the lower insulation pattern at least partially covers the second conductivity-type semiconductor layer, andthe upper insulation pattern covers at least one portion of the second conductivity-type semiconductor layer, the lower insulation pattern, and the first contact electrode, respectively.
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