Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.
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1. A device, comprising: a transistor device comprising a control terminal, a first load terminal and a second load terminal,a circuit configured to provide a switch control signal at an output of the circuit, anda control terminal resistor arrangement coupled between the output of the circuit and t
1. A device, comprising: a transistor device comprising a control terminal, a first load terminal and a second load terminal,a circuit configured to provide a switch control signal at an output of the circuit, anda control terminal resistor arrangement coupled between the output of the circuit and the control terminal of the transistor device, the control terminal resistor arrangement comprising a first circuit path coupled between a first reference voltage node and the control terminal of the transistor device, wherein the first circuit path comprises a variable resistor having a resistance value, the first circuit path is configured to connect the first reference voltage node to the control terminal via the variable resistor when the switch control signal is in a first state, the first circuit path is configured to disconnect the first reference voltage node from the control terminal when the switch control signal is in a second state different from the first state, and the first reference voltage node is configured to provide a voltage that sets the transistor device in a first switching state, anda second circuit path coupled between a second reference voltage node and the control terminal of the transistor device, wherein the second circuit path is configured to connect the second reference voltage node to the control terminal when the switch control signal is in the second state, the second circuit path is configured to disconnect the second reference voltage node from the control terminal when the switch control signal is in the first state, and the second reference voltage node is configured to provide a voltage that sets the transistor device in a second switching state different from the first switching state, the second reference voltage node is different from the first reference voltage node, and the first circuit path is different from the second circuit path,wherein the circuit is configured to control the control terminal resistor arrangement to set the resistance value of the control terminal resistor arrangement depending on operating conditions of the transistor device, the operating conditions being within a specified range of operating conditions for the transistor device. 2. The device of claim 1, wherein the transistor device comprises an insulated gate bipolar transistor. 3. The device of claim 1, wherein the operating conditions are associated with a temperature of the transistor device. 4. The device of claim 3, wherein setting the resistance value comprises setting the resistance value to a higher resistance value at lower temperatures and to a lower resistance value at higher temperatures. 5. The device of claim 4, wherein operating conditions associated with a lower temperature comprise a startup phase of the device, and operating conditions associated with higher temperatures comprise an operation after the startup phase. 6. The device of claim 5, wherein the circuit is configured to set the resistance value based on one of a time after a start of the device or a number of switching pulses after the start. 7. The device of claim 1, wherein the circuit comprises a driver, the driver comprising a plurality of switches to selectively couple the control terminal to the first reference voltage node for closing the transistor device or the second reference voltage node for opening the transistor device, and at least one switch for setting the resistance value. 8. The device of claim 1, wherein the control terminal resistor arrangement comprises a plurality of resistors. 9. The device of claim 1, wherein the specified range of operating conditions is a safe operating range that does not damage the transistor device. 10. The device of claim 1, wherein the first switching state of the transistor device is an off-state. 11. The device of claim 1, wherein: the first circuit path comprises a first switching circuit coupled between the first reference voltage node and the control terminal of the transistor device, the first switching circuit comprising a first switch coupled in series with a first resistor, anda second switching circuit coupled between the first reference voltage node and the control terminal of the transistor device, the second switching circuit comprising a second switch coupled in series with a second resistor; andthe second circuit path comprises a third switching circuit coupled between the second reference voltage node and the control terminal of the transistor device, the third switching circuit comprising a third switch coupled in series with a third resistor. 12. The device of claim 11, wherein the circuit is configured to set the resistance value to a first resistance value by activating the first switch and deactivating the second switch when setting the switching state of the transistor device to the first state, and set the resistance value to a second resistance value by activating the second switch and deactivating the first switch when setting the switching state of the transistor device to the first state. 13. A device, comprising: a switch transistor, wherein the switch transistor comprises a first load terminal, a second load terminal and a control terminal,a first resistor, wherein a first terminal of the first resistor is coupled to the control terminal and a second terminal of the first resistor is coupled to a first voltage terminal via a first switch, wherein the first voltage terminal is configured to provide a first voltage associated with a first switching state of the switch transistor,a second resistor, wherein a first terminal of the second resistor is coupled to the control terminal and the second terminal of the second resistor is coupled to the first voltage terminal via a second switch,a third resistor, wherein a first terminal of the third resistor is coupled with a control terminal of the switch transistor and a second terminal of the third resistor is coupled to a second voltage terminal via a third switch, wherein the second voltage terminal is configured to provide a second voltage associated with a second switching state of the switch transistor different from the first switching state, and the second voltage terminal is different from the first voltage terminal, anda circuit to control the first, second and third switches depending on a switching state to which the switch transistor is to be set and depending on an operating condition associated with temperature. 14. The device of claim 13, wherein the first resistor has a lower resistance value than the second resistor, and wherein the circuit is configured to operate the first switch in operating conditions associated with higher temperatures and the second switch in operating conditions associated with lower temperature. 15. The device of claim 13, wherein the second terminal of the first resistor is coupled to a first terminal of the first switch, a second terminal of the first switch being coupled to the first voltage terminal, and wherein the second terminal of the second resistor is coupled to a first terminal of the second switch, wherein a second terminal of the second switch is coupled to the first terminal of the first switch. 16. The device of claim 15, further comprising a diode coupled between the second resistor and the second switch. 17. The device of claim 13, further comprising a fourth switch coupled between the second voltage terminal and the second resistor, wherein the circuit is configured to control the third switch and the fourth switch depending on the switching state of the switch transistor is to be set to and on the operating conditions associated with temperature. 18. The device of claim 13, wherein the first switching state of the switch transistor is an off-state. 19. A method, comprising: setting a switching state of a transistor switch to a first state via a first circuit path based on a switch control signal, setting the switching state of the transistor switch to the first state comprising connecting a first voltage terminal to a control terminal of the transistor switch via the first circuit path, and disconnecting a second voltage terminal from the control terminal of the transistor switch via a second circuit path, wherein the first circuit path comprises a variable resistor having a variable resistance, the second circuit path is different from the first circuit path, and the second voltage terminal is different from the first voltage terminal;setting the switching state of the transistor switch to a second state via a second circuit path based on the switch control signal, setting the switching state of the transistor switch to the second state comprising disconnecting the first voltage terminal from the control terminal of the transistor switch via the first circuit path, and connecting the second voltage terminal to the control terminal of the transistor switch;setting the variable resistance to a first resistance value at first operating conditions; andsetting the variable resistance to a second resistance value at second operating conditions different from the first operating conditions, the first and second operating conditions being within a specified range of operating conditions of the transistor switch. 20. The method of claim 19, wherein the first and second operating conditions are associated with different temperature ranges. 21. The method of claim 20, wherein the first operating conditions are associated with lower temperatures than the second operating conditions, and wherein the first resistance value is higher than the second resistance value. 22. The method of claim 20, wherein the first operating conditions are associated with a startup phase, and the second operating conditions are associated with a phase after startup. 23. The method of claim 19, wherein setting the switching state of the transistor switch to the first state comprises turning-off the switching transistor. 24. The method of claim 19, wherein: the first circuit path comprises a first switching circuit coupled between the first voltage terminal and the control terminal of the transistor switch, the first switching circuit comprising a first switch coupled in series with a first resistor, anda second switching circuit coupled between the first voltage terminal and the control terminal of the transistor switch, the second switching circuit comprising a second switch coupled in series with a second resistor; andthe second circuit path comprises a third switching circuit coupled between the second voltage terminal and the control terminal of the transistor switch, the third switching circuit comprising a third switch coupled in series with a third resistor. 25. The method of claim 24, wherein setting the variable resistance to the first resistance value comprises activating the first switch and deactivating the second switch when setting the switching state of the transistor switch to the first state, and setting the variable resistance to the first resistance value comprises activating the second switch and deactivating the first switch when setting the switching state of the transistor switch to the first state.
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이 특허에 인용된 특허 (2)
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