Compositions and methods using same for flowable oxide deposition
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C09D-005/00
H01L-021/02
C23C-016/40
C23C-016/452
출원번호
US-0457397
(2014-08-12)
등록번호
US-10170297
(2019-01-01)
발명자
/ 주소
Pearlstein, Ronald Martin
Spence, Daniel P.
출원인 / 주소
VERSUM MATERIALS US, LLC
대리인 / 주소
Morris-Oskanian, Rosaleen P.
인용정보
피인용 횟수 :
0인용 특허 :
19
초록▼
Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or di
Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.
대표청구항▼
1. A formulation consisting of: (a) an organosilane precursor is selected from the group consisting of: methyltrimethoxysilane, methyltriethoxysilane, triethoxysilane, tetraethoxysilane, hexyltrimethoxysilane, isobutyltrimethoxysilane, isobutyltriethoxysilane, hexyltriethoxysilane, tert-butyltrimeth
1. A formulation consisting of: (a) an organosilane precursor is selected from the group consisting of: methyltrimethoxysilane, methyltriethoxysilane, triethoxysilane, tetraethoxysilane, hexyltrimethoxysilane, isobutyltrimethoxysilane, isobutyltriethoxysilane, hexyltriethoxysilane, tert-butyltrimethoxysilane, tert-butyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, and combinations thereof;(b) a second organosilane precursor selected from the group consisting of 1,1,1,4,4,4-hexamethoxy-1,4-disilabutane, 1-methyl-1,1,4,4,4-pentamethoxy-1,4-disilabutane, 1,1,1,4,4,4-hexaethoxy-1,4-disilabutane, 1-methyl-1,1,4,4,4-pentaethoxy-1,4-disilabutane, 1,1,1,3,3,3-hexamethoxy-1,3-disilapropane, 1-methyl-1,1,3,3,3-pentamethoxy-1,3-disilapropane, 1,1,1,3,3,3-hexaethoxy-1,3-disilapropane, 1-methyl-1,1,3,3,3-pentaethoxy-1,3-disilapropane, and combinations thereof;(c) a catalyst selected from the group consisting of HCl, HBr, HF, HI, a sulfonic acid, an amine, an imine, and combinations thereof;(d) a surfactant which is at least one selected from the group consisting of 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, 2,5-dimethylhexan-2,5-diol, and combinations thereof; and(e) optionally, a halogenation reagent having a formula II comprising: R9C(O)X II.wherein X is a halogen atom and R9 is selected from the group consisting of a hydrogen atom; a C1-C12 linear or branched alkyl group; a C3-C12 aryl group; a C3-C12 cycloalkyl group; a C1-C12 linear or branched acyl group; a C5-C12 aroyl group; and a C1-C12 linear or branched acyl halide group. 2. The formulation of claim 1 wherein the surfactant is 3,5-dimethyl-1-hexyn-3-ol. 3. A formulation comprising hexyltrimethoxysilane; di-iso-propylaminosilane; an amine; and 3,5-dimethyl-1-hexyn-3-ol.
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