Submicron sized silicon powder with low oxygen content
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01M-004/38
H01M-004/36
C01B-033/113
C01B-033/00
C01B-033/02
C01B-033/027
C01B-033/029
C01B-033/03
H01M-004/134
H01M-004/48
H01M-004/62
H01M-010/0525
H01M-004/02
출원번호
US-0699004
(2011-06-22)
등록번호
US-10181600
(2019-01-15)
우선권정보
EP-10015662 (2010-12-15)
국제출원번호
PCT/EP2011/060412
(2011-06-22)
§371/§102 date
20130103
(20130103)
국제공개번호
WO2012/000858
(2012-01-05)
발명자
/ 주소
Scoyer, Jean
Put, Stijn
Nelis, Daniël
Driesen, Kris
출원인 / 주소
UMICORE
대리인 / 주소
NK Patent Law
인용정보
피인용 횟수 :
0인용 특허 :
2
초록▼
A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiOx, with 0x2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or les
A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiOx, with 0x2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by weight at room temperature. The method for making the powder comprises a step where a Si precursor is vaporized in a gas stream at high temperature, after which the gas stream is quenched to obtain Si particles, and the Si particles are quenched at low temperature in an oxygen containing gas.
대표청구항▼
1. A Si powder having an average primary particle size between 20 nm and 60 nm, wherein the powder comprises a surface layer consisting of SiOx, with 1≤x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3%
1. A Si powder having an average primary particle size between 20 nm and 60 nm, wherein the powder comprises a surface layer consisting of SiOx, with 1≤x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by-weight at room temperature. 2. The Si powder of claim 1, wherein the surface layer has an average thickness between 0.5 nm and 5 nm. 3. A Si powder having an average primary particle size between 20 nm and 60 nm, wherein the powder has a SiOx surface layer, with 1≤x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by-weight at room temperature, wherein the powder comprises at least 98% Si. 4. The Si powder of claim 1, having a total oxygen content less than 4% by weight after being aged for 1 hour at 500° C. under atmospheric conditions and in air. 5. The Si powder of claim 1, having a total oxygen content less than 5% by weight after being aged for 1 hour at 700° C. under atmospheric conditions and in air. 6. The Si powder of claim 1, further comprising an element M selected from the group consisting of transition metals, metalloids, Group IIIa elements and carbon. 7. The Si powder of claim 6, wherein M comprises either one of more elements selected from the group consisting of nickel, copper, iron, tin, aluminum and cobalt. 8. A Li-ion secondary battery comprising the Si powder of claim 1 as a negative electrode material. 9. A method for manufacturing the Si powder of claim 1, comprising: providing a Si precursor,providing a gas stream at a temperature of at least 1727° C.,injecting the Si precursor into the gas stream, thereby vaporizing the Si precursor,quenching the gas stream carrying the vaporized Si precursor to a temperature below 1327° C., thereby obtaining Si particles,passivating the Si particles in an oxygen containing gas at a temperature below 700° C., andseparating the Si particles from the gas stream after passivation. 10. The method of claim 9, wherein passivation is performed at a temperature below 450° C. 11. The method of claim 10, wherein passivation is performed at a temperature between room temperature and 100° C. 12. The method of claim 9, wherein the gas stream is provided by a gas burner, a hydrogen burner, an RF plasma or a DC arc plasma. 13. The method of claim 9, wherein passivation is performed in an oxygen containing gas comprising one or more additional components selected from the group consisting of Ar, N2, H2, CO and CO2. 14. The method of claim 13, wherein the oxygen containing gas is a mixture of oxygen and nitrogen, with less than 1% oxygen by weight. 15. The method of claim 9, wherein passivation is carried out for a period of less than 60 minutes. 16. The method of claim 15, wherein passivation is carried out for a period of less than 10 minutes. 17. The method of claim 9, wherein the gas stream is provided in a radio frequency inductively coupled plasma, and wherein the gas stream comprises argon gas.
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이 특허에 인용된 특허 (2)
Allen Robert H. (Baton Rouge LA), Fluidized bed process.
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