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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0707638 (2017-09-18) |
등록번호 | US-10186428 (2019-01-22) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 0 인용 특허 : 851 |
Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The met
Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.
1. An etching method comprising: flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses a substrate comprising a region of exposed oxide;providing a hydrogen-containing precursor to the processing region;removing a
1. An etching method comprising: flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses a substrate comprising a region of exposed oxide;providing a hydrogen-containing precursor to the processing region;removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%;subsequent the removing at least a portion of the exposed oxide, increasing the relative humidity within the processing region to greater than or about 50%; andremoving an additional amount of the exposed oxide. 2. The etching method of claim 1, further comprising reducing a temperature of the substrate while increasing the relative humidity within the processing region. 3. The etching method of claim 2, wherein the temperature is reduced by at least about 5° C. 4. The etching method of claim 1, further comprising increasing a pressure within the processing chamber while increasing the relative humidity within the processing region. 5. The etching method of claim 4, wherein the pressure is increased by at least about 1 Torr. 6. The etching method of claim 1, wherein the relative humidity is increased above about 65%. 7. The etching method of claim 1, wherein after the additional amount of exposed oxide is removed, a concentration of fluorine in the substrate is below or about 5%. 8. The etching method of claim 1, wherein after the additional amount of exposed oxide is removed, a concentration of oxygen in the substrate is below or about 8%. 9. The etching method of claim 1, wherein the processing region is maintained plasma free during the removing operations. 10. The etching method of claim 1, wherein the relative humidity is increased incrementally by less than or about 20% per increment. 11. A cleaning method comprising: flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses a substrate comprising a high-aspect-ratio feature having a region of exposed oxide;providing a hydrogen-containing precursor to the processing region;removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region at greater than or about 50%;subsequent the removing at least a portion of the exposed oxide, increasing a flow rate of the fluorine-containing precursor while maintaining the relative humidity within the processing region at greater than or about 50%; andremoving an additional amount of the exposed oxide. 12. The cleaning method of claim 11, wherein removing an additional amount of the exposed oxide lowers a concentration of oxygen by at least about 5%. 13. The cleaning method of claim 11, wherein the flow rate of the fluorine-containing precursor is increased by at least about 2 sccm. 14. The cleaning method of claim 11, wherein a thickness of the exposed region of oxide prior to the removal operations is less than or about 2 nm. 15. The cleaning method of claim 11, wherein a critical dimension of the high-aspect-ratio feature is reduced by less than or about 1%. 16. The cleaning method of claim 11, wherein the processing region is maintained plasma free during the removing operations. 17. A removal method comprising: flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses a substrate comprising a high-aspect-ratio feature having a region of exposed oxide;while flowing the fluorine-containing precursor into the processing region, providing a hydrogen-containing precursor to the processing region;continuing to flow the fluorine-containing precursor and the hydrogen-containing precursor into the processing region for at least about 200 seconds; andremoving at least a portion of the exposed oxide while maintaining a relative humidity within the processing region at greater than or about 50%. 18. The removal method of claim 17, wherein the processing region is maintained plasma free during the removing operations. 19. The removal method of claim 17, wherein continuing to flow the fluorine-containing precursor and the hydrogen-containing precursor is performed for less than or about 500 seconds. 20. The removal method of claim 17, wherein the removing reduces a concentration of oxygen within the substrate by at least about 3%.
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