Semiconductor device and method for manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-051/52
H01L-027/12
H01L-027/32
H01L-051/56
H01L-029/786
H01L-051/00
출원번호
US-0582851
(2017-05-01)
등록번호
US-10186682
(2019-01-22)
우선권정보
JP-2003-069742 (2003-03-14)
발명자
/ 주소
Takayama, Toru
Maruyama, Junya
Ohno, Yumiko
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
0인용 특허 :
58
초록▼
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, se
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
대표청구항▼
1. A semiconductor device comprising: a first support medium;a first adhesive material over the first support medium;an oxide film over the first adhesive material;a first transistor over the oxide film; a light-emitting element electrically connected to the first transistor, wherein the light-emitt
1. A semiconductor device comprising: a first support medium;a first adhesive material over the first support medium;an oxide film over the first adhesive material;a first transistor over the oxide film; a light-emitting element electrically connected to the first transistor, wherein the light-emitting element comprises a first electrode, a second electrode, and a layer comprising an organic compound between the first electrode and the second electrode;an organic resin over the first transistor and the light-emitting element;an inorganic insulating film over the organic resin;a capacitor over the inorganic insulating film;a second adhesive material over the capacitor; anda second support medium over the second adhesive material. 2. The semiconductor device according to claim 1, wherein the light-emitting element is configured to extract light from a side of the first support medium. 3. The semiconductor device according to claim 1, wherein the light-emitting element and the capacitor overlap with each other. 4. The semiconductor device according to claim 1, further comprising a second transistor between the organic resin and the second adhesive material. 5. The semiconductor device according to claim 1, further comprising a central processing unit (CPU) between the organic resin and the second adhesive material. 6. The semiconductor device according to claim 1, wherein the first support medium and the second support medium are each a flexible material. 7. The semiconductor device according to claim 1, wherein the first transistor is a top gate transistor. 8. The semiconductor device according to claim 1, wherein the oxide film is a silicon oxide film. 9. The semiconductor device according to claim 1, wherein the first transistor comprises an active layer comprising polycrystalline silicon. 10. A semiconductor device comprising: a first plastic substrate;a first adhesive material over the first plastic substrate;an oxide film over the first adhesive material;a first transistor over the oxide film;a light-emitting element electrically connected to the first transistor, wherein the light-emitting element comprises a first electrode, a second electrode, and a layer comprising an organic compound between the first electrode and the second electrode;an organic resin over the first transistor and the light-emitting element;an inorganic insulating film over the organic resin;a capacitor over the inorganic insulating film;a second adhesive material over the capacitor; anda second plastic substrate over the second adhesive material. 11. The semiconductor device according to claim 10, wherein the light-emitting element is configured to extract light from a side of the first plastic substrate. 12. The semiconductor device according to claim 10, wherein the light-emitting element and the capacitor overlap with each other. 13. The semiconductor device according to claim 10, further comprising a second transistor between the organic resin and the second adhesive material. 14. The semiconductor device according to claim 10, further comprising a central processing unit (CPU) between the organic resin and the second adhesive material. 15. The semiconductor device according to claim 10, wherein the first plastic substrate and the second plastic substrate are each a flexible material. 16. The semiconductor device according to claim 10, wherein the first transistor is a top gate transistor. 17. The semiconductor device according to claim 10, wherein the oxide film is a silicon oxide film. 18. The semiconductor device according to claim 10, wherein the first transistor comprises an active layer comprising polycrystalline silicon. 19. A semiconductor device comprising: a first support medium;a first adhesive material over the first support medium;an oxide film over the first adhesive material;a first transistor over the oxide film;a light-emitting element electrically connected to the first transistor, wherein the light-emitting element comprises a first electrode, a second electrode, and a layer comprising an organic compound between the first electrode and the second electrode;an organic resin over the first transistor and the light-emitting element;an inorganic insulating film over the organic resin;a first conductive layer over the inorganic insulating film;an insulating layer over and in contact with the first conductive layer;a second conductive layer over and in contact with the insulating layer, wherein the first conductive layer and the second conductive layer overlap with each other;a second adhesive material over the second conductive layer; anda second support medium over the second adhesive material. 20. The semiconductor device according to claim 19, wherein the light-emitting element is configured to extract light from a side of the first support medium. 21. The semiconductor device according to claim 19, wherein the light-emitting element and the first conductive layer overlap with each other. 22. The semiconductor device according to claim 19, further comprising a second transistor between the organic resin and the second adhesive material. 23. The semiconductor device according to claim 19, further comprising a central processing unit (CPU) between the organic resin and the second adhesive material. 24. The semiconductor device according to claim 19, wherein the first support medium and the second support medium are each a flexible material. 25. The semiconductor device according to claim 19, wherein the first transistor is a top gate transistor. 26. The semiconductor device according to claim 19, wherein the oxide film is a silicon oxide film. 27. The semiconductor device according to claim 19, wherein the first transistor comprises an active layer comprising polycrystalline silicon. 28. A semiconductor device comprising: a first plastic substrate;a first adhesive material over the first plastic substrate;an oxide film over the first adhesive material;a first transistor over the oxide film;a light-emitting element electrically connected to the first transistor, wherein the light-emitting element comprises a first electrode, a second electrode, and a layer comprising an organic compound between the first electrode and the second electrode;an organic resin over the first transistor and the light-emitting element;an inorganic insulating film over the organic resin;a first conductive layer over the inorganic insulating film;an insulating layer over and in contact with the first conductive layer;a second conductive layer over and in contact with the insulating layer, wherein the first conductive layer and the second conductive layer overlap with each other;a second adhesive material over the second conductive layer; anda second plastic substrate over the second adhesive material. 29. The semiconductor device according to claim 28, wherein the light-emitting element is configured to extract light from a side of the first plastic substrate. 30. The semiconductor device according to claim 28, wherein the light-emitting element and the first conductive layer overlap with each other. 31. The semiconductor device according to claim 28, further comprising a second transistor between the organic resin and the second adhesive material. 32. The semiconductor device according to claim 28, further comprising a central processing unit (CPU) between the organic resin and the second adhesive material. 33. The semiconductor device according to claim 28, wherein the first plastic substrate and the second plastic substrate are each a flexible material. 34. The semiconductor device according to claim 28, wherein the first transistor is a top gate transistor. 35. The semiconductor device according to claim 28, wherein the oxide film is a silicon oxide film. 36. The semiconductor device according to claim 28, wherein the first transistor comprises an active layer comprising polycrystalline silicon.
Muramatsu Eiji,JPX, Circuit board connecting structure, electro-optical device, electronic apparatus provided with the same, and manufacturing method for electro-optical device.
Kawasaki Yuji,JPX ; Yamazaki Shunpei,JPX, Device for altering the output conditions of an information processing device according to input states at the user's k.
Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX, Display device and method of fabricating involving peeling circuits from one substrate and mounting on other.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Mansfield MA), Liquid crystal display having essentially single crystal transistors pixels and driving circuits.
Yamazaki,Shunpei; Takayama,Toru; Maruyama,Junya; Ohno,Yumiko; Tanaka,Koichiro, Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance.
Yamazaki,Shunpei; Takemura,Yasuhiko; Nakajima,Setsuo; Arai,Yasuyuki, Method of manufacturing a display device having a driver circuit attached to a display substrate.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Kuwabara,Hideaki; Maruyama,Junya; Ohno,Yumiko; Takayama,Toru; Goto,Yuugo; Arakawa,Etsuko; Yamazaki,Shunpei, Semiconductor device and method for manufacturing the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA) Spitzer Mark B. (Sharon MA), Single crystal silicon arrayed devices for display panels.
Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX, Using a temporary substrate to attach components to a display substrate when fabricating a passive type display device.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.