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A device and related method that provides a two-phase heat transfer device with a combination of enhanced evaporation and increase cooling capacity. A recess topology is used to increase suction of working fluid toward a heat source. A non-wetting coating or structure may be used to keep working flu

A device and related method that provides a two-phase heat transfer device with a combination of enhanced evaporation and increase cooling capacity. A recess topology is used to increase suction of working fluid toward a heat source. A non-wetting coating or structure may be used to keep working fluid away from the spaces between elongated members of an evaporator and a wetting coating or structure may be used to form thin films of working fluid around the distal regions of elongated members. The devices and method described herein may be used to cool computer chips, the skin of a hypersonic flying object, a parabolic solar collector, a turbine engine blade, or other heat sources that require high heat flux.

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1. A two phase heat transfer device, said device comprising: a reservoir configured for carrying a working fluid;a base member, said base member configured to receive thermal energy from a heat source;elongated members having at least one wall, said elongated members extending distally away from sai

1. A two phase heat transfer device, said device comprising: a reservoir configured for carrying a working fluid;a base member, said base member configured to receive thermal energy from a heat source;elongated members having at least one wall, said elongated members extending distally away from said base member and configured to define respective passages between adjacent elongated members;said elongated members include a proximal region and a distal region, wherein said distal region is configured to be at least partially inserted into the working fluid;a recess topography disposed on said at least one wall of said elongated members, wherein said recess topography is configured to accommodate the working fluid;said elongated members having a proximal end and a distal end substantially opposed from one another, wherein said proximal end to be closer to the heat source and said distal end to be inserted in the working fluid;wherein said recess topography comprises fractal topology, wherein said fractal topology comprises: recesses, wherein the number of recesses toward said proximal end of said elongated members is greater than the number of recesses toward said distal end of said elongated members; andsaid passages are configured to accommodate vapor produced from the working fluid so as to define a vapor space. 2. The device of claim 1, wherein said base member configured to be in communication with and adjacent to the heat source. 3. The device of claim 1, wherein at least some of said passages are channels, respectively. 4. The device of claim 3, wherein at least some of said channels are microchannels or nanochannels, or a combination of microchannels and nanochannels. 5. The device of claim 1, wherein said recesses comprise: a groove, slot, pipe, tube, trough, conduit, indentation, or flute, as well as any combination. 6. The device of claim 1, wherein said recess topography is configured to provide a suction of the working fluid in a direction from the working fluid toward the heat source. 7. The device of claim 1, wherein the device comprises the working fluid wherein vapor is produced from the working fluid to provide two phase heat transfer. 8. The device of claim 1, wherein said passages are configured to confine vapor between said reservoir and said base member. 9. The device of claim 8, wherein an evaporating thin film region is provided on at least some of said elongated members at said distal region configured to be at least partially inserted into the working fluid. 10. The device of claim 9, wherein the evaporating thin film region is between the heat source and said reservoir. 11. The device of claim 10, wherein the thermal energy travels through said elongated members and beyond the vapor space toward the evaporating thin film region. 12. The device of claim 11, wherein said proximal region of said elongated members has a saturation temperature that is greater than a saturation temperature of the evaporating film region. 13. The device of claim 9, wherein the evaporating thin film region is between the heat source and the working fluid. 14. The device of claim 13, wherein the thermal energy travels through said elongated members and beyond the vapor space toward the evaporating thin film region. 15. The device of claim 14, wherein said proximal region of said elongated members has a saturation temperature that is greater than a saturation temperature of the evaporating film region. 16. The device of claim 1, wherein said vapor space is located between the heat source and said reservoir. 17. The device of claim 1, wherein said vapor space is located between the heat source and the working fluid. 18. The device of claim 1, wherein said heat source is at least one semiconductor device or electronic device. 19. The device of claim 18, wherein a plurality of said at least one semiconductor device form a system comprising at least one of the following: processor unit or memory unit. 20. The device of claim 1, wherein said heat source is at least one of the following: integrated circuit, concentrated thermal and optic radiation, chemical reactions, high temperature liquid/vapor flows, high velocity flows, or high velocity shear flows. 21. The device of claim 1, wherein said heat source is at least one of the following: high performance computing system, RF system, photovoltaic system, concentrated photovoltaic system, hypersonic vehicle or craft, jet blast deflector, or turbine blade. 22. The device of claim 21, wherein said high performance computing system comprises at least one of the following: 3D Stacking computer chip, computer processor unit (CPU), graphics processor unit (GPU), or memory unit. 23. The device of claim 1, further comprising the heat source in communication with said device. 24. The device of claim 1, further comprising the working fluid disposed in said reservoir. 25. A method of making a two phase heat transfer device, said method comprising: providing a reservoir configured for carrying a working fluid;providing a base member configured to receive thermal energy from a heat source;providing elongated members having at least one wall, said elongated members having a proximal end and a distal end substantially opposed from one another, wherein said proximal end to be closer to the heat source and said distal end to be inserted in the working fluid, said elongated members extending distally away from said base member and configured to define respective passages between adjacent elongated members, said elongated members include a proximal region and a distal region;configuring said distal region of said elongated members to be able to at least partially be inserted into the working fluid;providing a recess topography disposed on said at least one wall of said elongated members, wherein said recess topography is configured to accommodate the working fluid;configuring said recess topography to comprise fractal topology, wherein said fractal topology comprises: recesses, wherein the number of recesses toward said proximal end of said elongated members is greater than the number of recesses toward said distal end of said elongated members. 26. The method of claim 25, wherein said base member is configured to be in communication with and adjacent to the heat source. 27. The method of claim 25, wherein at least some of said passages are channels, respectively. 28. The method of claim 27, wherein at least some of said channels are microchannels or nanochannels, or a combination of microchannels and nanochannels. 29. The method of claim 25, wherein said recesses comprise: a groove, slot, pipe, tube, trough, conduit, indentation, or flute, as well as any combination. 30. The method of claim 25, wherein said heat source is at least one semiconductor device or electronic device. 31. The method of claim 30, wherein a plurality of said at least one semiconductor device form a system comprising at least one of the following: processor unit or memory unit. 32. The method of claim 25, wherein said heat source is at least one of the following: integrated circuit, concentrated thermal and optic radiation, chemical reactions, high temperature liquid/vapor flows, high velocity flows, or high velocity shear flows. 33. The method of claim 25, wherein said heat source is at least one of the following: high performance computing system, RF system, photovoltaic system, concentrated photovoltaic system, hypersonic vehicle or craft, jet blast deflector, or turbine blade. 34. The method of claim 33, wherein said high performance computing system comprises at least one of the following: 3D Stacking computer chip, computer processor unit (CPU), graphics processor unit (GPU), or memory unit. 35. An apparatus, said apparatus comprising: a reservoir configured for carrying a working fluid;an integrated circuit (IC) die, said IC die comprises a heat source and a two phase heat transfer device; whereinsaid two phase heat transfer device comprises: a base member, said base member configured to receive thermal energy from the heat source;elongated members having at least one wall, said elongated members extending distally away from said base member and configured to define respective passages between adjacent said elongated members;at least some said elongated members configured to be at least partially inserted into the working fluid;a recess topography disposed on said at least one wall of said elongated members, wherein said recess topography is configured to accommodate the working fluid;said elongated members having a proximal end and a distal end substantially opposed from one another, wherein said proximal end to be closer to the heat source and said distal end to be inserted in the working fluid;wherein said recess topography comprises fractal topology, wherein said fractal topology comprises: recesses, wherein the number of recesses toward said proximal end of said elongated members is greater than the number of recesses toward said distal end of said elongated members; andsaid passages are configured to accommodate vapor produced from the working fluid so as to define a vapor space. 36. The apparatus of claim 35, wherein said IC die is in communication with a chip carrier. 37. The apparatus of claim 36, wherein said communication with said chip carrier comprises a connector. 38. The apparatus of claim 37, wherein said connector comprises solder balls. 39. The apparatus of claim 35, wherein at least some of said passages comprise microchannels, respectively. 40. The apparatus of claim 35, wherein at least some of said passages comprise nanochannels, respectively. 41. The apparatus of claim 35, wherein said heat source comprises a semiconductor device. 42. The apparatus of claim 41, wherein said semiconductor device comprises at least one of: processor, microprocessor, central processor unit (CPU), or memory unit. 43. The apparatus of claim 41, wherein said semiconductor device comprises at least one of the following: diodes, transistors, sensors, charge-coupled device (CCD), or rectifiers. 44. The apparatus of claim 35, wherein said recesses comprise: a groove, slot, pipe, tube, trough, conduit, indentation, or flute, as well as any combination. 45. The apparatus of claim 35, wherein said recess topography is configured to provide a suction of the working fluid in a direction from the working fluid toward the heat source. 46. An apparatus, said apparatus comprising: a first reservoir configured for carrying a first working fluid in said first reservoir;a first integrated circuit (IC) die, said first IC die comprises a first heat source and a first two phase heat transfer device; wherein said first two phase heat transfer device of said first IC die comprises: a first base member, said first base member configured to receive thermal energy from the first heat source;first elongated members having at least one wall, said first elongated members extending distally away from said first base member and configured to define respective first passages between adjacent first elongated members;at least some of said first elongated members configured to be at least partially inserted into the first working fluid;a first recess topography disposed on said at least one wall of said first elongated members, wherein said first recess topography is configured to accommodate the first working fluid;said first elongated members having a proximal end and a distal end substantially opposed from one another, wherein said proximal end to be closer to the first heat source and said distal end to be inserted in the first working fluid;wherein said first recess topography comprises first fractal topology, wherein said first fractal topology comprises: first recesses, wherein the number of first recesses toward said proximal end of said first elongated members is greater than the number of first recesses toward said distal end of said first elongated members; andsaid first passages are configured to accommodate vapor produced from the first working fluid so as to define a first vapor space;a second reservoir configured for carrying a second working fluid in said second reservoir;a second integrated circuit (IC) die, said second IC die comprises a second heat source and a second two phase heat transfer device; wherein said second two phase heat transfer device of said second IC die comprises: a second base member, said second base member configured to receive thermal energy from the second heat source;second elongated members having at least one wall, said second elongated members extending distally away from said second base member and configured to define respective second passages between adjacent said second elongated members;at least some of said second elongated members configured to be at least partially inserted into the second working fluid;a second recess topography disposed on said at least one wall of said second elongated members, wherein said second recess topography is configured to accommodate the second working fluid; andsaid second passages are configured to accommodate vapor produced from the second working fluid so as to define a second vapor space; andsaid first IC die and said second IC die operatively coupled together. 47. The apparatus of claim 46, wherein said first IC die is in communication with a chip carrier. 48. The apparatus of claim 47, wherein said communication with said chip carrier comprises a connector. 49. The apparatus of claim 48, wherein said connector comprises solder balls. 50. The apparatus of claim 46, wherein at least some of said first passages or second passages comprise microchannels, respectively; or at least some of said first passages and second passages comprise microchannels. 51. The apparatus of claim 46, wherein said at least some of said first passages or second passages comprise nanochannels, respectively; or at least some of said first passages and second passages comprise nanochannels. 52. The apparatus of claim 46, wherein: said first heat source comprises a first semiconductor device, or said second heat source comprises a second semiconductor device; orsaid first heat source comprises the first semiconductor device and said second heat source comprises the second semiconductor device. 53. The apparatus of claim 52, wherein: said first semiconductor device, said second semiconductor device, or both of said first semiconductor device and second semiconductor device comprise at least one of: processor, microprocessor, central processor unit (CPU), or memory unit. 54. The apparatus of claim 52, wherein: said first semiconductor device, said second semiconductor device, or both said first semiconductor device and second semiconductor device comprise at least one of the following: diodes, transistors, sensors, charge-coupled device (CCD), or rectifiers. 55. The apparatus of claim 46, wherein said first IC die and said second IC die are electrically connected to one another. 56. The apparatus of claim 46, further comprising a thermal insulator layer disposed between said first IC die and said second IC die. 57. The apparatus of claim 46, wherein said second recess topography comprises one or more recesses. 58. The apparatus of claim 57, wherein one or more of said second recesses comprises: a groove, slot, pipe, tube, trough, conduit, indentation, or flute, as well as any combination. 59. The apparatus of claim 46, wherein said second recess topography comprises second fractal topology. 60. The apparatus of claim 59, wherein: said second elongated members having a proximal end and a distal end substantially opposed from one another, wherein said proximal end to be closer to the second heat source and said distal end to be inserted in the second working fluid; andwherein said second fractal topology comprises: second recesses, wherein the number of second recesses toward said proximal end of said second elongated members is greater than the number of second recesses toward said distal end of said second elongated members. 61. The apparatus of claim 59, wherein said second recess topography is configured to provide a suction of the second working fluid in the direction toward the second heat source. 62. The apparatus of claim 46, wherein said first recess topography is configured to provide a suction of the first working fluid in a direction toward the first heat source. 63. An apparatus, said apparatus comprising: a reservoir configured for carrying a working fluid;an integrated circuit (IC) die, said IC die comprises a heat source;a two phase heat transfer device thermally connected to said IC die; wherein said two phase heat transfer device comprises: a base member, said base member configured to receive thermal energy from the heat source;elongated members having at least one wall, said elongated members extending distally away from said base member and configured to define respective passages between adjacent said elongated members;at least some said elongated members configured to be at least partially inserted into the working fluid;a recess topography disposed on said at least one wall of said elongated members, wherein said recess topography is configured to accommodate the working fluid;said elongated members having a proximal end and a distal end;wherein said recess topography comprises fractal topology, wherein said fractal topology comprises: recesses, wherein the number of recesses toward said proximal end of said elongated members to be closer to the heat source is greater than the number of recesses toward said distal end of said elongated members to be inserted in the working fluid; andsaid passages are configured to accommodate vapor produced from the working fluid so as to define a vapor space. 64. The apparatus of claim 63, wherein said IC die is in communication with a chip carrier. 65. The apparatus of claim 64, wherein said communication with said chip carrier comprises a connector. 66. The apparatus of claim 65, wherein said connector comprises solder balls. 67. The apparatus of claim 63, wherein at least some of said passages comprise microchannels, respectively. 68. The apparatus of claim 63, wherein at least some of said passages comprise nanochannels, respectively. 69. The apparatus of claim 63, wherein said heat source comprises a semiconductor device. 70. The apparatus of claim 69, wherein said semiconductor device comprises at least one of: processor, microprocessor, central processor unit (CPU), or memory unit. 71. The apparatus of claim 69, wherein said semiconductor device comprises at least one of the following: diodes, transistors, sensors, charge-coupled device (CCD), or rectifiers. 72. The apparatus of claim 71, wherein said integrated circuit (IC) die and a two phase heat transfer device are mechanically connected with one another. 73. The apparatus of claim 72, wherein said mechanical connection includes an adhesive. 74. The device of claim 63, wherein said recesses comprise: a groove, slot, pipe, tube, trough, conduit, indentation, or flute, as well as any combination. 75. The device of claim 63, wherein said recess topography is configured to provide a suction of the working fluid in a direction from the working fluid toward the heat source.