초록 ▼

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.

대표청구항 ▼

1. A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the through silicon via feature and wherein the through silicon via feature c

1. A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the through silicon via feature and wherein the through silicon via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate, and a bottom, the method comprising: immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometer and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1, the deposition composition comprising: (a) a source of copper ions;(b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof;(c) a quaternized dipyridyl polymer compound; and(d) chloride ions; andsupplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled through silicon via feature. 2. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: wherein R1 is a moiety that connects the pyridine rings. 3. The method of claim 2 wherein the quaternized dipyridyl polymer is derived from a compound that comprises the general structure: wherein m is an integer from 0 to 6. 4. The method of claim 3 wherein the quaternized dipyridyl polymer is derived from a compound that comprises one of the following structures: wherein m is an integer from 0 to 6. 5. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having one of the following structures: 6. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: 7. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: 8. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: wherein h is an integer from 0 to 6, and R2 and R3 are each independently selected from among hydrogen or a short alkyl chain having from 1 to about 3 carbon atoms. 9. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: wherein i and j are integers from 0 to 6, and R4, R5, R6, and R7 are each independently selected from among hydrogen or a short alkyl chain having from 1 to about 3 carbon atoms. 10. The method of claim 9 wherein i and j are both 0, and the dipyridyl polymer is derived from a compound that comprises one of the following structures: 11. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: wherein k and l are integers from 0 to 6, and R8, R9, R10, R11, and R12 are each independently selected from among hydrogen or a short alkyl chain having from 1 to about 3 carbon atoms. 12. The method of claim 1 wherein the quaternized dipyridyl polymer is derived from a dipyridyl compound having the following structure: 13. The method of claim 1 wherein the quaternized dipyridyl polymer compound is a reaction product of a dipyridyl and an alkylating agent comprising the following structure: wherein B is selected from among:a single bond, an oxygen atom a methenyl hydroxide a carbonyl an amino an imino a sulfur atom a sulfoxide a phenylene and a glycol and p and q may be the same or different, are integers between 0 and 6, wherein at least one of p and q is at least 1;X is an integer from one to about four;Y and Z are leaving groups selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, brosylate, or nosylate; andR1 through R14 are each independently hydrogen, substituted or unsubstituted alkyl having from one to six carbon atoms, substituted or unsubstituted alkylene having from one to six carbon atoms, or substituted or unsubstituted aryl. 14. The method of claim 13 wherein: p and q are both one or are both two; andB is selected from among:an oxygen atom a methenyl hydroxide a carbonyl a phenylene group an ethylene glycol group and a propylene glycol group 15. A composition for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising: (a) a source of copper ions;(b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof;(c) a quaternized dipyridyl polymer compound; and(d) chloride ions. 16. A composition as set forth in claim 15 further comprising a suppressor. 17. A composition as set forth in claim 15 wherein said quaternized dipyridyl polymer compound comprises the product of the reaction between a dipyridyl compound and an alkylating agent. 18. A composition as set forth in claim 15 wherein said dipyridyl polymer is the reaction product of a dipyridyl compound and an alkylating agent comprising the following structure: wherein B is selected from among:a single bond, an oxygen atom a methenyl hydroxide a carbonyl an amino an imino a sulfur atom a sulfoxide a phenylene and a glycol and p and q may be the same or different, are integers between 0 and 6, wherein at least one of p and q is at least 1;X is an integer from one to about four;Y and Z are leaving groups selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, brosylate, or nosylate; andR1 through R14 are each independently hydrogen, substituted or unsubstituted alkyl having from one to six carbon atoms, substituted or unsubstituted alkylene having from one to six carbon atoms, or substituted or unsubstituted aryl. 19. A composition as set forth in claim 15 wherein the quaternized dipyridyl polymer compound comprises the polymeric reaction product of 1,2-Bis(4-pyridyl)ethane and 1-chloro-2-(2-chloroethoxy)ethane.