Sensor and heater for stimulus-initiated fracture of a substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H03K-017/78
H01L-023/00
H01L-023/15
H01L-023/34
H01L-023/525
H01L-023/64
H01L-031/20
H03K-019/177
H01L-029/74
H01L-031/0224
출원번호
US-0220221
(2016-07-26)
등록번호
US-10224297
(2019-03-05)
발명자
/ 주소
Chua, Christopher L.
Lu, Jeng Ping
Whiting, Gregory
Limb, Scott J.
Lujan, Rene A.
Wang, Qian
출원인 / 주소
Palo Alto Research Center Incorporated
대리인 / 주소
Hollingsworth Davis, LLC
인용정보
피인용 횟수 :
0인용 특허 :
12
초록▼
A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples t
A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples the power source to the heater in response to the trigger signal When energized by the power source, the heater generates heat sufficient to initiate self-destruction of the stressed substrate.
대표청구항▼
1. A device, comprising: a stress-engineered substrate;a heater thermally coupled to the stress-engineered substrate, the heater comprising a fuse portion;a power source; andtrigger circuitry, comprising: a sensor configured to generate a trigger signal when exposed to a trigger stimulus; anda switc
1. A device, comprising: a stress-engineered substrate;a heater thermally coupled to the stress-engineered substrate, the heater comprising a fuse portion;a power source; andtrigger circuitry, comprising: a sensor configured to generate a trigger signal when exposed to a trigger stimulus; anda switch configured to electrically couple the power source to the heater when activated by the trigger signal, wherein, when electrically coupled to the power source for a predetermined period of time, the fuse portion of the heater is configured to heat up and break, and wherein the stress-engineered substrate is configured to fracture during a cool-down phase after the fuse portion break. 2. The device of claim 1, wherein the sensor is a photodiode and the photodiode comprises: a first electrode layer disposed over a substrate and extending over the substrate to form a first lead of the photodiode;a first doped layer disposed over the first electrode layer;a second oppositely doped layer disposed over the first doped layer, the first and second doped layers forming at least a portion of an active region of the photodiode; anda second electrode layer disposed over the second doped layer, the second doped layer and the second electrode layer extending over the substrate to form a second lead of the photodiode. 3. The device of claim 2, wherein the first and second leads electrically connect the active region of the photodiode to a periphery of the device and are configured to be connected to external leads that communicate with one or more external electronic devices. 4. The device of claim 1, further comprising an adhesion promoting surface disposed between the substrate and the sensor. 5. The device of claim 4, wherein the adhesion promoting surface is a barrier layer comprising one or more of silicon dioxide (SiO2), silicon nitride (SiN), and silicon oxynitride (SiON). 6. The device of claim 1, wherein the stress-engineered substrate includes at least one tensile stress layer having a residual tensile stress and at least one compressive stress layer having a residual compressive stress and being mechanically coupled to the at least one tensile stress layer such that the at least one tensile stress layer and the at least one compressive stress layer are self-equilibrating. 7. The device of claim 1, wherein the stress-engineered substrate comprises chemically tempered glass. 8. The device of claim 1, wherein the switch is a thyristor. 9. The device of claim 1, wherein one or more electronic devices are disposed on the stress-engineered substrate such that fracture of the stress-engineered substrate fractures the electronic devices. 10. The device of claim 1, wherein an impedance of the heater is substantially equally to an impedance of the power source. 11. The device of claim 1, wherein the sensor is configured to sense at least one of radiation, electromagnetic radiation, radio frequency radiation, infrared radiation, ultraviolet radiation, x-ray radiation, visible light, laser light, vibration, a chemical, vapor, gas, sound, temperature, time, moisture, and an environmental condition. 12. A method, comprising: generating a trigger signal in response to exposure to a trigger stimulus;in response to the trigger signal, activating a switch that couples a power source to a heater in thermal contact with a stress-engineered substrate, the heater comprising a fuse portion;the fuse portion of the heater heating up and breaking after being coupled to power source for a predetermined period of time; andthe stress-engineered substrate fracturing during a cool-down phase after the fuse portion of the heater breaks. 13. The method of claim 12, wherein the trigger stimulus is caused by a tampering event. 14. The method of claim 12, wherein: the trigger stimulus is light; andfurther comprising aiming a source of the light toward a sensor sensitive to the light. 15. The method of claim 12, wherein generating the trigger signal comprises generating the trigger signal in response to a tampering event, wherein the trigger stimulus comprises at least one of sunlight, room light, a chemical, and x-rays.
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이 특허에 인용된 특허 (12)
Hata,Shohei; Sotokawa,Hideo; Furuichi,Hiroaki, Anodic bonding method and electronic device having anodic bonding structure.
Limb, Scott J. H.; Whiting, Gregory L.; Garner, Sean R., Thermally tempered glass substrate using CTE mismatched layers and paste mixtures for transient electronic systems.
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