Substrate supports with multi-layer structure including independent operated heater zones
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05B-001/02
H01L-021/67
H01L-021/683
H01J-037/32
C23C-004/10
C23C-004/134
C23C-014/50
C23C-014/54
C23C-014/34
C23C-014/10
C23C-016/40
C23C-016/458
C23C-016/46
C23C-016/509
출원번호
US-0497992
(2017-04-26)
등록번호
US-10236193
(2019-03-19)
발명자
/ 주소
Singh, Harmeet
Gaff, Keith
Benjamin, Neil
Comendant, Keith
출원인 / 주소
LAM RESEARCH CORPORATION
인용정보
피인용 횟수 :
0인용 특허 :
99
초록▼
A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conduc
A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.
대표청구항▼
1. A substrate support configured to support a substrate in a plasma processing chamber, the substrate support comprising: a first insulative layer comprising a plurality of heater zones, wherein the plurality of heater zones are arranged in rows and columns;a second insulative layer comprising a pl
1. A substrate support configured to support a substrate in a plasma processing chamber, the substrate support comprising: a first insulative layer comprising a plurality of heater zones, wherein the plurality of heater zones are arranged in rows and columns;a second insulative layer comprising a plurality of conductive vias, the plurality of conductive vias comprise first ends and second ends, wherein the first ends of the plurality of conductive vias are connected respectively to the plurality of heater zones, and wherein each of the second ends of the plurality of conductive vias is connected respectively to one of a plurality of power supply lines or one of a plurality of power return lines;a third insulative layer comprising the plurality of power return lines;a first conduit extending through the third insulative layer and to the second insulative layer; anda first plurality of leads extending through the first conduit and connecting to the plurality of heater zones by the plurality of power supply lines and first ones of the plurality of conductive vias,wherein the plurality of heater zones are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber. 2. The substrate support of claim 1, further comprising a plurality of rectifiers connected to second ones of the plurality of conductive vias at first ends and to the plurality of power return lines at second ends. 3. The substrate support of claim 1, wherein: the first insulative layer is disposed on the second insulative layer; andthe second insulative layer is disposed on the third insulative layer. 4. The substrate support of claim 1, further comprising: an electrostatic clamping layer disposed on the first insulative layer and comprising an electrode, wherein the electrode is configured to electrostatically clamp the substrate to the substrate support;a thermal barrier layer; anda cooling plate comprising a plurality of cooling channels,wherein the third insulative layer is disposed on the thermal barrier layer, andthe thermal barrier layer is disposed on the cooling plate. 5. The substrate support of claim 1, further comprising a fourth insulative layer comprising a plurality of heaters. 6. The substrate support of claim 5, wherein the fourth insulative layer is disposed on the first insulative layer. 7. The substrate support of claim 1, wherein: the plurality of power supply lines extend along the rows of the plurality of heater zones; andthe plurality of power return lines extend along the columns of the plurality of heater zones. 8. The substrate support of claim 1, comprising the plurality of power supply lines and the plurality of power return lines, wherein the plurality of power supply lines and the plurality of power return lines are disposed in different layers. 9. The substrate support of claim 8, wherein: the plurality of power return lines are disposed in the second insulative layer; andthe plurality of power supply lines are disposed in the third insulative layer. 10. The substrate support of claim 1, wherein each of the plurality of heater zones is connected to a respective one of the plurality of power supply lines and to a respective one of the plurality of power return lines. 11. The substrate support of claim 1, wherein at least one of: no two heater zones of the plurality of heater zones are connected to a same one of the plurality of power supply lines; orno two heater zones of the plurality of heater zones are connected to a same one of the plurality of power return lines. 12. A system comprising: the substrate support of claim 1; anda switching device to independently connect each of the plurality of heater zones to a corresponding one of the plurality of power supply lines, wherein the switching device sequentially supplies power to the plurality of heater zones according to a time-domain multiplexing method. 13. The substrate support of claim 1, further comprising: a second conduit; anda second plurality of leads extending through the second conduit and connecting to the plurality of heater zones by the plurality of power return lines and second ones of the plurality of conductive vias. 14. A substrate support configured to support a substrate in a plasma processing chamber, the substrate support comprising: a first insulative layer comprising a plurality of heater zones and a plurality of power supply lines, wherein the plurality of heater zones are arranged in rows and columns, and wherein the plurality of power supply lines are connected to the plurality of heater zones;a second insulative layer comprising a first plurality of conductive vias and a second plurality of conductive vias,wherein first ends of the first plurality of conductive vias are connected to the plurality of power supply lines,first ends of the second plurality of conductive vias are connected to the plurality of heater zones,second ends of the first plurality of conductive vias are connected to a first plurality of leads, andsecond ends of the second plurality of conductive vias are connected to a plurality of power return lines, wherein the plurality of power return lines are connected to a second plurality of leads; anda cooling plate comprising a first conduit and a second conduit,wherein the first plurality of leads extend through the first conduit,the second plurality of leads extend through the second conduit, andthe plurality of heater zones are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber. 15. The substrate support of claim 14, wherein: the first ends of the first plurality of conductive vias are connected respectively to the plurality of power supply lines;the first ends of the second plurality of conductive vias are connected respectively to the plurality of heater zones;the second ends of the first plurality of conductive vias are connected respectively to the first plurality of leads; andthe second ends of the second plurality of conductive vias are connected respectively to the plurality of power return lines. 16. The substrate support of claim 14, the second insulative layer is disposed between (i) the first insulative layer and (ii) the first plurality of leads, the plurality of power return lines and the second plurality of leads. 17. The substrate support of claim 14, wherein the first plurality of leads, the plurality of power return lines and the second plurality of leads are disposed along a same plane. 18. The substrate support of claim 14, wherein each of the plurality of power supply lines extends along a respective one of the rows of the plurality of heater zones. 19. The substrate support of claim 18, wherein each of the plurality of power return lines extends along a respective one of the columns of the plurality of heater zones. 20. A system comprising: the substrate support of claim 14; anda switching device to independently connect each of the plurality of heater zones to a corresponding one of the plurality of power supply lines, wherein the switching device sequentially supplies power to the plurality of heater zones according to a time-domain multiplexing method.
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Jyousaka, Megumi; Shinozuka, Shinichi; Ogata, Kunie, Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate.
Hudson, Douglas E.; Butcher, Dana G.; Gates, Richard B.; Pelrin, James, Workpiece chuck with temperature control assembly having spacers between layers providing clearance for thermoelectric modules.
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