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Biometric imaging devices and associated methods

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H04N-005/33
  • H04N-007/18
  • G06K-009/00
출원번호 US-0864592 (2015-09-24)
등록번호 US-10244188 (2019-03-26)
발명자 / 주소
  • Saylor, Stephen D.
  • Pralle, Martin U.
출원인 / 주소
  • SiOnyx, LLC
대리인 / 주소
    Engellenner, Thomas J.
인용정보 피인용 횟수 : 0  인용 특허 : 347

초록

Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelen

대표청구항

1. A system for identifying an individual, comprising: an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 800 nanometers (nm) to about 1200 nm;an imager device positioned to receive the electromagnetic radiation upon reflection from an i

이 특허에 인용된 특허 (347)

  1. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
  2. Shim Se-jin,KRX ; Jin You-chan,KRX ; Nam Seung-hee,KRX, Annealing methods of doping electrode surfaces using dopant gases.
  3. Lee, Kwy-Ro; Oh, Hyun-Ho; Jung, Min-Jae; Hong, Hyung-Ki; Cho, Seong-Moon; Lee, Youn-Jae, Apparatus and method for measuring biological information.
  4. Grace Richard ; Davis Robert K., Apparatus and method of monitoring a subject's eyes using two different wavelengths of light.
  5. Danese Michael J., Apparatus for treating an object using ultra-violet light.
  6. Voutsas, Apostolos, Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films.
  7. Ebstein, Steven M., Applications of laser-processed substrate for molecular diagnostics.
  8. Levine Barry F. (Livingston NJ), Article comprising a Si-based photodetector.
  9. Merryman Jerry D. (Dallas TX) Porter Vernon R. (Plano TX), Autofocus system for scanning laser inspector or writer.
  10. Akahori Hiroshi,JPX ; Muramatsu Masaharu,JPX, Back illuminated photodetector and method of fabricating the same.
  11. McCarten, John P.; Tivarus, Cristian A.; Summa, Joseph R.; Stevens, Eric G.; Doan, Hung Q.; Guidash, Robert M., Back-illuminated image sensors having both frontside and backside photodetectors.
  12. Lauxtermann,Stefan C., Backside illuminated CMOS image sensor with pinned photodiode.
  13. Park, Sung-Hyung; Lee, Ju-Il, Backside illuminated image sensor.
  14. Liu, Han-Chi; Lin, Jeng-Shyan; Yaung, Dun-Nian; Liu, Jen-Cheng; Wang, Wen-De; Chuang, Chun-Chieh, Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same.
  15. Venezia, Vincent; Tai, Hsin-Chih; Mao, Duli; Manabe, Sohei; Rhodes, Howard E.; Qian, Wei Dong, Backside illuminated image sensor having deep light reflective trenches.
  16. Nozaki, Hidetoshi; Rhodes, Howard E., Backside illuminated imaging sensor with backside P doped layer.
  17. Robert Nixon ; Nicholas Doudoumopoulos ; Eric R. Fossum, Backside illumination of CMOS image sensor.
  18. Clark Lowell E., Balanced overvoltage protector for a dual-wire system.
  19. Corcoran, Stephen P.; Rowe, Robert K.; Martin, Ryan, Biometric detection using spatial, temporal, and/or spectral techniques.
  20. Petroff Michael D. (Fullerton CA) Stapelbroek Maryn G. (Santa Ana CA), Blocked impurity band detectors.
  21. Floyd Philip D. ; Hofstetter Daniel, Blue vertical cavity surface emitting laser.
  22. Bernier Eric,FRX, Breakover-triggered dipole component having a controlled sensitivity.
  23. Moon, Chang-Rok; Lee, Duck-hyung; Cho, Seong-ho, CMOS image sensors including backside illumination structure.
  24. Adkisson, James W.; Gambino, Jeffrey P.; Jaffe, Mark D.; Leidy, Robert K.; Rassel, Richard J.; Stamper, Anthony K., CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom.
  25. Kindem, Joel; Carlson, Lars S., Capacitive bypass.
  26. Singh Rajiv K. (Gainesville FL) Moudgil Brij M. (Gainesville FL) Behl Sanjay (Macon GA) Bhattacharya Deepika (Gainesville FL), Ceramic, metal and composite materials having increased surface area.
  27. Elbanhawy, Alan; Tjia, Benny, Chip module for complete power train.
  28. Civanlar Mehmet Reha ; Haskell Barin Geoffry, Client-server architecture using internet and public switched networks.
  29. Leibovich Vladimir E. (San Jose CA) Novak W. Thomas (San Jose CA), Coarse and fine motion positioning mechanism.
  30. Merrill,Richard B., Complete-charge-transfer vertical color filter detector.
  31. Banerjee Arindam (Madison Heights MI) Yang Chi C. (Troy MI) Guha Subhendu (Troy MI), Composite back reflector for photovoltaic device.
  32. John M. Lauffer ; Voya R. Markovich ; Thomas R. Miller ; Konstantinos I. Papathomas ; William E. Wilson, Composite laminate circuit structure and methods of interconnecting the same.
  33. Lillquist Robert D. (Schenectady NY), Composite visible/thermal-infrared imaging apparatus.
  34. Lillquist Robert D. (Schenectady NY) Pimbley Joseph M. (Schenectady NY) Vogelsong Thomas L. (Schenectady NY), Composite visible/thermal-infrared imaging system.
  35. Pan, Yaoling; Stumbo, David P., Contact doping and annealing systems and processes for nanowire thin films.
  36. Dill Hans G. (San Marcos CA) Lillington David R. (Van Nuys CA), Controlled reflectance solar cell.
  37. Kaschmitter James L. (Pleasanton CA) Truher Joel B. (Palo Alto CA) Weiner Kurt H. (Campbell CA) Sigmon Thomas W. (Beaverton OR), Crystallization and doping of amorphous silicon on low temperature plastic.
  38. Olson Jerry M. (Lakewood CO) Kurtz Sarah R. (Golden CO), Current-matched high-efficiency, multijunction monolithic solar cells.
  39. Andreou, Andreas G.; Marwick, Miriam Adlerstein; Pouliquen, Philippe O., Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system.
  40. Wickboldt Paul ; Carey Paul G. ; Smith Patrick M. ; Ellingboe Albert R., Deposition of dopant impurities and pulsed energy drive-in.
  41. Fujii Satoshi,JPX ; Seki Yuichiro,JPX ; Yoshida Kentaro,JPX ; Nakahata Hideaki,JPX ; Higaki Kenjiro,JPX ; Kitabayashi Hiroyuki,JPX ; Uemura Tomoki,JPX ; Shikata Shin-ichi,JPX, Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device.
  42. Matsushita, Kenichi, Diode.
  43. Nagasu Masahiro,JPX ; Mori Mutsuhiro,JPX ; Kobayashi Hideo,JPX ; Sakano Junichi,JPX, Diode and power converting apparatus.
  44. Ashby Carol I. H. (Edgewood NM) Dishman James L. (Albuquerque NM), Dopant type and/or concentration selective dry photochemical etching of semiconductor materials.
  45. Yao,Jie, Doped absorption for enhanced responsivity for high speed photodiodes.
  46. Hairston Allen W. (Andover MA), Double direct injection dual band sensor readout input circuit.
  47. Hoffman, Alan W.; Ray, Michael; Bornfreund, Richard E., Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors.
  48. Cole Barrett E., Dual bandwith bolometer.
  49. Bareket, Noah; Zywno, Marek, Dynamic tracking of wafer motion and distortion during lithography.
  50. Nagasaki Tatsuo (Musashino JPX) Fujimori Hiroyoshi (Hachioji JPX), Endoscope.
  51. Mazur, Eric; Winkler, Mark, Engineering flat surfaces on materials doped via pulsed laser irradiation.
  52. Uemura Tsunesaburo (Tokyo JPX), Exposure apparatus with laser source requiring new gas introduction.
  53. Akira Mineji JP; Seiichi Shishiguchi JP; Shuichi Saito JP, Fabrication method of semiconductor device using ion implantation.
  54. Mitlitsky Fred ; Truher Joel B. ; Kaschmitter James L. ; Colella Nicholas J., Fabrication of polycrystalline thin films by pulsed laser processing.
  55. Mazur, Eric; Shen, Mengyan, Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate.
  56. Mazur,Eric; Shen,Mengyan, Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate.
  57. Russell Thomas A., Flexible illuminators for phototherapy.
  58. Hamakawa Yoshihiro (Kawanishi JPX) Tawada Yoshihisa (Kobe JPX) Tsuge Kazunori (Kobe JPX) Izumina Masanobu (Omiya JPX), Flexible photovoltaic device.
  59. Nessfield, Stanley, Freight-carrying platforms.
  60. Mandelkorn Joseph (Peretz 5 Rehovot ILX), Glass sealed silicon membrane solar cell.
  61. Hayashi ; Izuo ; Lang ; Roy, Heterostructure laser having a stripe region defined in an active layer by a difference in impurity.
  62. Kozlowski, Lester J.; Tennant, William E., High gain detector amplifier with enhanced dynamic range for single photon read-out of photodetectors.
  63. Lester J. Kozlowski ; Gerard J. Sullivan ; Roger E. Dewames ; Brian T. McDermott, High performance ultraviolet imager for operation at room temperature.
  64. Fran.cedilla.ois, Roy, High-capacitance photodiode.
  65. McCaffrey, Nathaniel J.; Carey, James E., Highly-depleted laser doped semiconductor volume.
  66. Farrier, Michael, Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range.
  67. Frank Fischer DE; Andreas Waag DE; Thierry Baron DE; Gottfried Landwehr DE; Thomas Litz DE; Gunter Reuscher DE; Markus Keim DE; Ulrich Zehnder DE; Hans-Peter Steinbruck DE; Mario Nagelstrass, II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction.
  68. Kinoshita Takao (Tokyo JPX) Sakai Shinji (Yokohama JPX) Nagashima Yoshitake (Chigasaki JPX) Hashimoto Seiji (Yokohama JPX) Suga Akira (Yokohama JPX), Image pick-up apparatus with high resolution and anti-bloom characteristics.
  69. Takei Akira (Yokohama JPX) Nishikawa Tetsuo (Kawasaki JPX), Image sensor.
  70. Shim, Eun-Sub; Ahn, Jung-Chak; Lim, Moo-Sup; Bae, Hyung-Jin; Oh, Min-Seok, Image sensor for stabilizing a black level.
  71. Lee,Jun Taek; Yang,Woon Phil, Image sensor integrated circuit devices including a photo absorption layer.
  72. Gu Tieer, Image sensor or LCD including switching pin diodes.
  73. Altice, Jr., Peter P.; McKee, Jeffrey A., Image sensor with a capacitive storage node linked to transfer gate.
  74. Theil, Jeremy A.; Vook, Dietrich W.; Haddad, Homayoon, Image sensor with pixel isolation system and manufacturing method therefor.
  75. Lee,Ji Soo; Mouli,Chandra, Image sensors with optical trench.
  76. Hong,Sungkwon C., Imager pixel with capacitance for boosting reset voltage.
  77. Fan, Xiaofeng; Brady, Frederick, Imaging method, apparatus, and system providing improved imager quantum efficiency.
  78. Pilla, Subrahmanyam; Kadiyala, Srinivas, Imaging system with negative electron affinity photocathode.
  79. Carlson, Lars S.; Zhao, Shulai; Wilson, Richard, Indirect back surface contact to semiconductor devices.
  80. Ishikawa Tomohiro,JPX, Infrared detector and fabrication method thereof.
  81. Hisa Yoshihiro (Itami JPX), Infrared imaging device.
  82. Mueller Michael (Dresden DEX) Gottfried-Gottfried Ralf (Wetzler DEX) Kueck Heinz (Langebrueck DEX), Infrared radiation absorption device.
  83. Ishikawa Tomohiro (Amagasaki JPX) Ueno Masashi (Amagasaki JPX) Kaneda Osamu (Amagasaki JPX), Infrared sensor having a heat sensitive semiconductor portion that detects and absorbs infrared rays.
  84. Bethea Clyde G. (Plainfield NJ) Choi Kwong-Kit (North Plainfield NJ) Levine Barry F. (Livingston NJ) Malik Roger J. (Summit NJ) Walker John F. (Westfield NJ), Infrared-radiation detector device.
  85. Norton Paul R. (Santa Barbara CA), Integrated IR and visible detector.
  86. Jack Michael D. ; Ray Michael ; Wyles Richard H., Integrated IR, visible and NIR sensor and methods of fabricating same.
  87. Fossum Eric R. ; Pain Bedabrata, Integrated infrared and visible image sensors.
  88. Hui Tian ; Ricardo Motta, Integrated light sensors with back reflectors for increased quantum efficiency.
  89. Glass Alastair M. (Rumson NJ) Johnson Anthony M. (Spotswood NJ), Integrated optical device having integral photodetector.
  90. Handa Yuichi (Atsugi JPX) Okuda Masahiro (Atsugi JPX) Osawa Hiroshi (Atsugi JPX), Integrated optical head.
  91. Smyk Darek A., Intelligent data peripheral systems and methods.
  92. Lee, Sywe N.; Wayne, David, Interlace overlap pixel design for high sensitivity CMOS image sensors.
  93. Cooke Richard H. (Storrington GB2) Perrins John J. (Crawley Down GB2) Young Stephen G. (Shoreham GB2), Ion implantation apparatus.
  94. Iranmanesh Ali (Sunnyvale CA), Isolation process for VLSI.
  95. Kroger Harry (Sudbury MA), Josephson tunnel junction device with hydrogenated amorphous silicon, germanium or silicon-germanium alloy tunneling bar.
  96. Miyawaki Mamoru,JPX ; Sugawara Saburo,JPX, LCD having a shading layer exhibiting a different reflection characteristic from reflection electrodes.
  97. Nath Prem (Rochester MI) Laarman Timothy (Almont MI) Vogeli Craig (New Baltimore MI) Whelan Kenneth (Clawson MI) Kelly Bernard (Sterling Heights MI), Large area, low voltage, high current photovoltaic modules and method of fabricating same.
  98. Tsao,Yi Chang, Laser annealing apparatus.
  99. Lee, Hong-Ro, Laser annealing apparatus for processing semiconductor devices in inline manner.
  100. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX ; Tanaka Koichiro,JPX, Laser annealing method and laser annealing device.
  101. Chou,Stephen Y., Laser assisted direct imprint lithography.
  102. Han, Yujie; Nikumb, Suwas; Luan, Ben Li; Nagata, John, Laser chemical fabrication of nanostructures.
  103. Chua Chee Tee,SGX ; Lee Yuan-Ping,SGX ; Zhou Mei Sheng,SGX ; Chan Lap, Laser curing of spin-on dielectric thin films.
  104. Koezuka,Junichi; Takada,Sadako, Laser doping processing method and method for manufacturing semiconductor device.
  105. Dulaney Jeffrey L. ; Clauer Allan H. ; Toller Steven M., Laser peening process and apparatus with uniform pressure pulse confinement.
  106. Fogel, Keith E.; Lee, Kam Leung; Saenger, Katherine L.; Sung, Chun Yung; Yin, Haizhou, Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics.
  107. Russell Stephen D. (San Diego CA) Sexton Douglas A. (San Diego CA) Kelley Eugene P. (Spring Valley CA), Laser texturing.
  108. Russell Stephen D. (San Diego CA) Sexton Douglas A. (San Diego CA) Kelley Eugene P. (Spring Valley CA), Laser texturing.
  109. Shibata Hajime (Tsukuba JPX) Makita Yunosuke (Toride JPX) Yamada Kawakatsu (Tsukuba JPX) Uchida Yutaka (Kamakura JPX) Satoh Saburoh (Yokohama JPX), Laser-beam annealing apparatus.
  110. Mazur, Eric; Shen, Mengyan, Laser-induced structuring of substrate surfaces.
  111. Magued Bishay ; Randall M. Chung ; James K. Dawson ; David Escobar ; Mike Fukatsu ; Edward Andrew Jakl ; Richard Arthur Mann ; Sarit Neter ; Ian Olsen ; Gregory A. Urban, Light sensing system with high pixel fill factor.
  112. Lauter, Josef; Kemna, Armin; Brockherde, Werner; Hausschild, Ralf, Light sensitive semiconductor component.
  113. Wells,David; Leiphart,Shane P., Light sensor having undulating features for CMOS imager.
  114. Yi,Yasha; Kimerling,Lionel C.; Duan,Xiaoman; Zeng,Lirong, Light trapping in thin film solar cells using textured photonic crystal.
  115. Augusto, Carlos J. R. P., Light-sensing device.
  116. Cacharelis Philip John, Liquid crystal display fabrication process using a final rapid thermal anneal.
  117. Kountz,Michael; Olsen,Randy; Adamson,Michael, Low temperature texturing layer to enhance adhesion of subsequent layers.
  118. Ballon, Christian; Pezzani-Legall, Rachel, Low-capacitance bidirectional protection device.
  119. Wyles Richard H. ; Frye William H., Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays.
  120. Shannon John M. (Whyteleafe GB2), Majority charge carrier bipolar diode with fully depleted barrier region at zero bias.
  121. Diab Mohamed Kheir ; Kiani Massi E. ; Ragsdale Charles Robert ; Lepper ; Jr. James M., Manual and automatic probe calibration.
  122. Carey, III,James Edward; Mazur,Eric, Manufacture of silicon-based devices having disordered sulfur-doped surface layers.
  123. Nakata,Mitsuru; Takechi,Kazushige; Kanoh,Hiroshi, Manufacturing method of thin film device substrate.
  124. Hongyong Zhang JP; Naoaki Yamaguchi JP; Yasuhiko Takemura JP, Manufacturing of TFT device by backside laser irradiation.
  125. Tian, Hui; Sargent, Edward Hartley, Materials, systems and methods for optoelectronic devices.
  126. Land Cecil E. (Albuquerque NM) McKinney Ira D. (Albuquerque NM), Method and apparatus for bistable optical information storage for erasable optical disks.
  127. Hutchens,T. William; Yip,Tai Tung, Method and apparatus for desorption and ionization of analytes.
  128. Rick V. Murakami ; Matthew W. Pettit, Method and apparatus for histological and physiological biometric operation and authentication.
  129. Pologe Jonas A. ; Tobin ; Jr. Robert M., Method and apparatus for improved photoplethysmographic perfusion-index monitoring.
  130. Liu,Mark Y.; Taylor,Mitchell, Method and apparatus for laser annealing.
  131. Ahmed, Khaled; Majhi, Prashant, Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays.
  132. Obara, Takashi; Nozaki, Hideki; Kobayashi, Motoshige, Method and apparatus for manufacturing semiconductor element.
  133. Ramappa, Deepak A.; DeBusk, Damon Keith, Method and apparatus for monitoring in-line copper contamination.
  134. Hideo Haraguchi JP; Izuru Matsuda JP, Method and apparatus for positioning a disk-shaped object.
  135. Langsdorf Karlheinz (Burghausen DEX), Method and apparatus for the rotary sawing of brittle and hard materials.
  136. Li, Jin; Li, Jiutao, Method and apparatus providing graded-index microlenses.
  137. Lenchenkov, Victor, Method and apparatus providing light traps for optical crosstalk reduction.
  138. Davies D. Eirug (Belmont MA) Roosild Sven A. (Billerica MA) Dolan ; Jr. Russell P. (Concord MA), Method and means for passivation and isolation in semiconductor devices.
  139. Cole, Bryan G., Method and structure to reduce optical crosstalk in a solid state imager.
  140. Seman, Jr., Andrew E., Method for balancing cells in a battery pack.
  141. Engelsberg Audrey C., Method for enhancing chemisorption of material.
  142. Ruby Douglas S. ; Basore Paul A. ; Schubert W. Kent, Method for fabricating silicon cells.
  143. Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX), Method for forming a flash memory by forming shallow and deep regions adjacent the gate.
  144. Akiyama, Masahiro; Nakagawa, Hisashi; Yamanaka, Tatsuya; Shiota, Atsushi; Kurosawa, Takahiko, Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation.
  145. Kane James (Lawrenceville NJ), Method for making a photodetector with enhanced light absorption.
  146. Malinovich Yacov,ILX ; Koltin Ephie,ILX, Method for making backside illuminated image sensor.
  147. Narayan Jagdish (Knoxville TN) White Clark W. (Oak Ridge TN) Young Rosa T. (Knoxville TN), Method for making defect-free zone by laser-annealing of doped silicon.
  148. Hezel Rudolf (Hofheimer Strasse 12 D-8000 Mnchen 60 DEX), Method for manufacture of a solar cell.
  149. Shimomura,Akihisa; Koyama,Masaki; Shoji,Hironobu, Method for manufacturing semiconductor device, and laser irradiation apparatus.
  150. Haight Richard Alan ; Longo Peter P. ; Morris Daniel Peter ; Wagner Alfred, Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed beam.
  151. Hongo Mikio (Yokohama JPX) Mizukoshi Katsuro (Yokohama JPX) Sano Shyuzo (Yokohama JPX) Kamimura Takashi (Yokohama JPX) Takahashi Takahiko (Iruma JPX), Method for modifying wiring of semiconductor device.
  152. Tsuo Y. Simon (Golden CO) Landry Marc D. (Lafayette CO) Pitts John R. (Lakewood CO), Method for processing silicon solar cells.
  153. Ochi,Mototaka, Method for producing solid-state imaging device.
  154. Weiner Kurt H. (San Jose CA), Method for shallow junction formation.
  155. Grolier, Vincent; Plössl, Andreas, Method for the production of an optoelectronic component using thin-film technology.
  156. Michael J. Danese, Method for treating an object using ultra-violet light.
  157. Mejia, Claudio P., Method of and apparatus for identifying a portion of a waveform representing a physiological event.
  158. Voutsas Tolis, Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient.
  159. Chu,Jack O.; Cobb,Michael A.; Saunders,Philip A.; Shi,Leathen, Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques.
  160. Fu, Shih-Chu; Shiau, Gwo-Yuh; Yao, Liang-Lung; Hsieh, Yuan-Chih; Shiu, Feng-Jia, Method of fabricating backside illuminated image sensor.
  161. Guarini, Kathryn W.; Hsu, Louis L.; Shi, Leathen; Singh, Dinkar V.; Wang, Li-Kong, Method of fabricating silicon devices on sapphire with wafer bonding at low temperature.
  162. Fiorini Paolo,BEX ; Sedky Sherif,EGX ; Caymax Matty,BEX ; Baert Christiaan,BEX, Method of fabrication of an infrared radiation detector and infrared detector device.
  163. Itoh Hitoshi (Mitaka JPX) Moriya Takahiko (Yokosuka JPX), Method of forming a conductive film on an insulating region of a substrate.
  164. Sparks, Douglas Ray, Method of forming a reactive material and article formed thereby.
  165. Takashi Fujimura JP; Shinichi Kawamura JP, Method of forming polycrystalline semiconductor film.
  166. Zaidi,Saleem H., Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors.
  167. Hawkins Gilbert A. (Mendon NY) Gluck Ronald M. (Rochester NY), Method of making backside illuminated image sensors.
  168. Kevin M. Connolly, Method of making infrared and visible light detector.
  169. King Gerard J. (Alexandria VA) Dunn Aubrey J. (Springfield VA), Method of making photodetectors using ion implantation and laser annealing.
  170. Nishiura Masaharu (Kanagawa JPX) Yamada Katsumi (Kanagawa JPX), Method of making thin film solar cell array.
  171. Shigenaka, Keitaro; Nakata, Fumio, Method of manufacturing a multi-wavelength semiconductor image sensor.
  172. Mei Ping ; Lujan Rene A. ; Boyce James B. ; Chua Christopher L. ; Hack Michael G., Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage.
  173. Harkin Gerard F.,GB2 ; Young Nigel D.,GB2, Method of manufacturing an electronic device using thermally stable mask.
  174. Hummel Rolf E. (Gainesville FL) Ludwig Matthias H. (Gainesville FL) Vala Martin (Gainesville FL), Method of manufacturing photoluminescing semiconductor material using lasers.
  175. Poon, Chyiu-Hyia; Cho, Byung Jin; Lu, Yong Feng; See, Alex; Bhat, Mousumi, Method of multiple pulse laser annealing to activate ultra-shallow junctions.
  176. Maass Heinz (Hamburg DEX), Method of producing a flexible carrier substrate.
  177. Hideo Yamagishi JP; Hitoshi Nishio JP; Takayuki Suzuki JP, Method of producing a thin-film photovoltaic device.
  178. Matsuno Yoshinori,JPX ; Naomoto Hideo,JPX ; Arimoto Satoshi,JPX ; Morikawa Hiroaki,JPX ; Sasaki Hajime,JPX, Method of producing thin film solar cell.
  179. Rajavel, Rajesh D., Methods and apparatus for three-color infrared sensors.
  180. De Munck, Koen; Minoglou, Kiki; De Vos, Joeri, Methods for manufacturing arrays for CMOS imagers.
  181. Fukushima, Yasumori; Takafuji, Yutaka; Takei, Michiko; Tomiyasu, Kazuhide, Methods for producing a semiconductor device having planarization films.
  182. Wong Javier ; Lin Li-Ju Judy ; Iams Douglas Allan ; Wong Hongchuan ; Yamashita Tsutomu Tom, Micro-texture media made by polishing of a selectively irradiated surface.
  183. Knerer, Dieter; Huber, Andreas; Lambert, Ulrich; Passek, Friedrich, Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it.
  184. Sharma Arvind K. (Cranbury NJ) Stabile Paul J. (Langhorne PA), Monolithic antenna with integral pin diode tuning.
  185. Pezzani Robert (Vouvray FRX), Monolithic diode assay.
  186. Kauffman, Christopher Lee; Griffith, Gerald Pray; Jones, Ronald B.; Yoo, Sung Shik; Davis, Michael A., Multi-band focal plane array.
  187. Hu, Xiaoping, Multi-depth-of-field light-sensing device, and system and method for use thereof having plural light-sensing pixel layers sense light signals with different wavelength bands from different distances.
  188. Choi, Soo Young; Chae, Yong Kee; Sheng, Shuran, Multi-junction solar cells and methods and apparatuses for forming the same.
  189. Hu, Xiaoping, Multi-spectrum photosensitive device.
  190. Keitaro Shigenaka JP; Fumio Nakata JP, Multi-wavelength semiconductor image sensor and method of manufacturing the same.
  191. Falk,Fritz; Andrae,Gudrun, Multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate and method of producing.
  192. Cao Min ; Vande Voorde Paul J. ; Perner Frederick A. ; Vook Dietrich W., Multiple color detection elevated pin photo diode active pixel sensor.
  193. Dalal Vikram L. (Newark DE), Multiple gap photovoltaic device.
  194. Barthelemy Jean-Claude (12 rue Barra 42000 Saint-Etienne FRX) Geyssant Andr (24 rue Paillard 42100 Saint-Etienne FRX), Non-invasive method for the in vivo determination of the oxygen saturation rate of arterial blood, and device for carryi.
  195. Miyazaki, Yasuhito; Yoneta, Yasuhito; Suzuki, Hisanori; Muramatsu, Masaharu; Atsumi, Toshihisa, OCT device.
  196. Tiedje Thomas (Garwood NJ) Abeles Benjamin (Princeton NJ), Optical absorption enhancement in amorphous silicon deposited on rough substrate.
  197. Michael J. Lurie ; Robert Amantea ; Francis P. Pantuso, Optical detectors using nulling for high linearity and large dynamic range.
  198. Green Martin A. (Waverley AUX) Wenham Stuart R. (Illawong AUX), Optical properties of solar cells using tilted geometrical features.
  199. Ishizuya Tohru,JPX ; Amemiya Noboru,JPX ; Akagawa Keiichi,JPX, Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same.
  200. Ginzboorg Philip,FIX, Overload prevention in a telecommunication network node.
  201. Ugge Angelo ; Pezzani Robert,FRX, Overvoltage protection circuit.
  202. Duane, Russell; Smith, Jeremy Paul; Byatt, Steven Wilton, Overvoltage protection device.
  203. Guha Subhendu (Troy MI) Ovshinsky Stanford R. (Bloomfield Hills MI), P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same.
  204. Railkar,Tarak A.; Malshe,Ajay P.; Brown,William D., Passivation of material using ultra-fast pulsed laser.
  205. Suzuki Muneo (Tsu JPX) Kondo Mikio (Tsu JPX) Morimoto Makoto (Hisai JPX) Kayanoki Kazuhito (Tsu JPX), Passive infrared detector.
  206. Kaminsky, Cheryl J.; Bourdelais, Robert P.; Pratt, Steven M.; Lioy, Daniel C., Patterned roller for the micro-replication of complex lenses.
  207. Lang Charles D. (Wysox PA) McCalmont Scott D. (Athens PA) Choi John (Sayre PA) Hou Anchi (Towanda PA) Shobert Alan (Sayre PA), Peel-apart photosensitive element.
  208. Murakami,Ichiro, Photo-electric converting device and its driving method, and its manufacturing method, solid-state image pickup device and its driving method and its manufacturing method.
  209. Wäny, Martin, Photodetector and method for detecting radiation.
  210. Morikawa Takenori,JPX, Photodetector and method for fabricating same.
  211. Yamamura, Kazuhisa; Sakamoto, Akira; Nagano, Terumasa; Ishikawa, Yoshitaka; Kawai, Satoshi, Photodiode and photodiode array.
  212. Yamamura, Kazuhisa; Sakamoto, Akira; Nagano, Terumasa; Ishikawa, Yoshitaka; Kawai, Satoshi, Photodiode and photodiode array.
  213. Yamamura, Kazuhisa; Sakamoto, Akira; Nagano, Terumasa; Ishikawa, Yoshitaka; Kawai, Satoshi, Photodiode and photodiode array.
  214. Webb Paul P. (Beaconsfield CAX), Photodiode having enhanced long wavelength response.
  215. Yamamura, Kazuhisa; Sakamoto, Akira; Nagano, Terumasa, Photodiode manufacturing method and photodiodes.
  216. Tabarelli Werner (Schlossstr. 5 Vaduz LIX FL-9490) Lbach Ernst W. (Tonagass 374 Eschen LIX FL-9492), Photolithographic method for the manufacture of integrated circuits.
  217. Haddad, Homayoon; Jiang, Jutao; McKee, Jeffrey; Miller, Drake; Forbes, Leonard; Palsule, Chintamani, Photosensitive imaging devices and associated methods.
  218. Haddad, Homayoon; Jiang, Jutao; McKee, Jeffrey; Miller, Drake; Palsule, Chintamani; Forbes, Leonard, Photosensitive imaging devices and associated methods.
  219. Janz Siegfried,CAX ; Lafontaine Hughes,CAX ; Xu Dan-Xia,CAX, Phototonic device with strain-induced three dimensional growth morphology.
  220. Keppner Herbert (Neuchatel CHX), Photovoltaic cell and method for fabrication of said cell.
  221. Noguchi Shigeru (Hirakata JPX) Iwata Hiroshi (Neyagawa JPX) Sano Keiichi (Takatuki JPX), Photovoltaic device.
  222. Noguchi Shigeru,JPX ; Iwata Hiroshi,JPX ; Sano Keiichi,JPX, Photovoltaic device.
  223. Czubatyj Wolodymyr (Hamtramck MI) Singh Rajendra (Clawson MI) Doehler Joachim (Union Lake MI) Allred David D. (Troy MI) Reyes Jaime M. (Birmingham MI), Photovoltaic device having incident radiation directing means for total internal reflection.
  224. Matsuyama Jinsho,JPX ; Matsuda Koichi,JPX, Photovoltaic device provided with an opaque substrate having a specific irregular surface structure.
  225. Warner ; Jr. Raymond M. (Edina MN), Photovoltaic semi-conductor devices.
  226. Zayhowski John J. (Pepperell MA), Picosecond Q-switched microlasers.
  227. Rhodes, Howard E., Pinned photodiode structure and method of formation.
  228. Verlinden Bart,BEX ; Van Hunsel Johan,BEX, Printing master comprising strain gauges.
  229. Matsuyama Jinsho,JPX, Process for forming zinc oxide film and processes for producing semiconductor device substrate and photo-electricity generating device using the film.
  230. Ghirardi Frederic,FRX ; Giraudet Louis,FRX, Process for making a monolithic integrated structure incorporating opto-electronic components and structure made in thi.
  231. Falster, Robert J.; Voronkov, Vladimir, Process for preparing low defect density silicon using high growth rates.
  232. Graef Dieter,DEX ; Ammon Wilfried Von,DEX ; Wahlich Reinhold,DEX ; Krottenthaler Peter,DEX ; Lambert Ulrich,DEX, Process for producing silicon semiconductor wafers with low defect density.
  233. Rohatgi Ajeet ; Doshi Parag ; Tate John Keith ; Mejia Jose ; Chen Zhizhang, Processes for producing low cost, high efficiency silicon solar cells.
  234. Nishi Kenji,JPX, Projection exposure method and apparatus.
  235. Pezzani Robert (Vouvray FRX), Protection component for automobile circuit.
  236. Mei Ping ; Lujan Rene A. ; Boyce James B., Proximity laser doping technique for electronic materials.
  237. Okumura, Hiroshi, Pulse laser irradiation method for forming a semiconductor thin film.
  238. Mendelson, Yitzhak, Pulse oximeter and method of operation.
  239. Veeder, Kenton, Response-enhanced monolithic-hybrid pixel.
  240. Veeder, Kenton, Response-enhanced monolithic-hybrid pixel.
  241. Trapani Giorgio B. (Cambridge MA), Rigid electro-optic device using a transparent ferroelectric ceramic element.
  242. Osajda Marc,FRX ; Delpoux Arnaud,FRX, Rotary position sensor with reference and grey scales.
  243. Wachi Akihiko,JPX ; Yanachi Seishiro,JPX ; Kakishima Nobuyuki,JPX ; Matsumoto Masaya,JPX, Screen printing method and screen printing apparatus.
  244. Green Martin A. (Waverley AUX) Wenham Stuart R. (Illawong AUX) Srinivasamohan Narayanan (Anzac Parade Kensington AUX), Sculpted solar cell surfaces.
  245. Gifford, Maurice M; Seal, Christopher H; McCartney, David John, Security check provision.
  246. Bour, David P.; Knollenberg, Clifford F.; Chua, Christopher L., Selective decomposition of nitride semiconductors to enhance LED light extraction.
  247. Weiner Kurt H. (Campbell CA), Selective epitaxy using the gild process.
  248. Yu Bin, Selective laser anneal process using highly reflective aluminum mask.
  249. Kizilyalli, Isik C.; Radosevich, Joseph Rudolph; Roy, Pradip Kumar, Selective laser annealing of semiconductor material.
  250. Stuart Ross Wenham AU; Martin Andrew Green AU, Self aligning method for forming a selective emitter and metallization in a solar cell.
  251. Dyck Rudolph H. (Palo Alto CA) Early James M. (Palo Alto CA), Self-aligned antiblooming structure for charge-coupled devices.
  252. Tomono Takao (5-4-9 ; Minami ; Shinozaki-cho Kanagawa JPX) Nishikata Tasunari (5-4-9 ; Minami ; Shinozaki-cho Kanagawa JPX) Pu Lyong S. (5-4-9 ; Minami ; Shinozaki-cho Kanagawa JPX) Sasaki Keisuke (5, Self-frequency-doubler laser element.
  253. Watanabe Atsuo,JPX ; Saito Katsuaki,JPX, Semiconductor device and method of manufacturing same.
  254. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  255. Saito Yutaka,JPX, Semiconductor device having a semiconductor film of low oxygen concentration.
  256. Sakai Takamasa (Koriyama JPX), Semiconductor device with multi-electrode construction equivalent to variable capacitance diode.
  257. Ohkawa, Narumi, Semiconductor device, manufacturing process thereof and imaging device.
  258. Smith James N. (Tempe AZ) Thompson ; III Arthur D. (Scottsdale AZ), Semiconductor devices by laser enhanced diffusion.
  259. Vineis, Christopher; Carey, James; Li, Xia, Semiconductor devices having reduced substrate damage and associated methods.
  260. Kwon, Doo Won; Yoo, Jong Ryeol; Moon, Chang Rok, Semiconductor devices, CMOS image sensors, and methods of manufacturing same.
  261. Haus Hermann A. (Lexington MA) Utaka Katsuyuki (Tokyo JPX), Semiconductor element having opposite signs of a 상세보기
  • Shima Akihiro (Itami JPX) Isshiki Kunihiko (Itami JPX), Semiconductor laser manufacturing method.
  • Westbrook Leslie D. (Ipswich GB2) Adams Michael J. (Suffolk GB2), Semiconductor laser structures.
  • Ono Reiji,JPX, Semiconductor light receiving device and method of manufacturing the same.
  • Sakamoto, Akira; Iida, Takashi; Yamamoto, Koei; Yamamura, Kazuhisa; Nagano, Terumasa, Semiconductor light-detecting element.
  • Sakamoto, Akira; Iida, Takashi; Yamamoto, Koei; Yamamura, Kazuhisa; Nagano, Terumasa, Semiconductor light-detecting element.
  • Nakamura, Takao; Matsubara, Hideki, Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device.
  • Mitsuhiro Horikawa JP, Semiconductor manufacturing method including gettering of metal impurities.
  • Forbes, Leonard, Semiconductor on insulator structure.
  • Nishimura Michiyo (Fujisawa JPX) Nitta Jun (Sagamihara JPX) Nakamura Kenji (Hadano JPX) Majima Masao (Atsugi JPX) Nakata Toru (Ebina JPX), Semiconductor optical amplifying apparatus.
  • Yamamura, Kazuhisa; Sakamoto, Akira; Nagano, Terumasa; Miyazaki, Yasuhito; Yoneta, Yasuhito; Suzuki, Hisanori; Muramatsu, Masaharu, Semiconductor photodetection element.
  • Iguchi, Yasuhiro; Kuhara, Yoshiki, Semiconductor photodiode and an optical receiver.
  • Yamazaki Shunpei (Tokyo JPX), Semiconductor photoelectric conversion device, light-transparent substrate therefor and their manufacturing methods.
  • Kawahito, Shoji; Homma, Mitsuru, Semiconductor range-finding element and solid-state imaging device.
  • Bruland, Kelly J.; Baird, Brian W.; Lo, Ho Wai; Evans, Frank G., Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures.
  • Bruland,Kelly J.; Baird,Brian W.; Lo,Ho Wai; Swaringen,Stephen N.; Evans,Frank G., Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset.
  • Bruland, Kelly J.; Baird, Brian W.; Lo, Ho Wai, Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows.
  • Bruland, Kelly J., Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling.
  • Sickler, Jason; Donaldson, Keith, Semiconductor surface modification.
  • Weber, Klaus Johannes; Blakers, Andrew William, Semiconductor texturing process.
  • Conn, Robert O., Semiconductor wafer with well contacts on back side.
  • Cohen, Guy Moshe; Rim, Kern; Rogers, Dennis L.; Schaub, Jeremy Daniel; Yang, Min, Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same.
  • Wood,Roland A., Sensor for dual wavelength bands.
  • Li,Jiutao; Kauffman,Ralph; Mauritzson,Richard A., Shallow trench isolation by atomic-level silicon reconstruction.
  • Haddad, Homayoon; Jiang, Jutao, Shallow trench textured regions and associated methods.
  • Huth Gerald C. (Hermosa Beach CA), Silicon avalanche photodiode array.
  • Forbes,Leonard, Silicon oxycarbide substrates for bonded silicon on insulator.
  • Fitzergald, Eugene A., Silicon wafer with embedded optoelectronic material for monolithic OEIC.
  • Carey, III,James Edward; Mazur,Eric, Silicon-based visible and near-infrared optoelectric devices.
  • Mazur, Eric; Carey, III, James E., Silicon-based visible and near-infrared optoelectric devices.
  • Mazur, Eric; Carey, III, James E., Silicon-based visible and near-infrared optoelectric devices.
  • Mazur, Eric; Carey, James Edward, Silicon-based visible and near-infrared optoelectric devices.
  • Mazur,Eric; Carey, III,James Edward, Silicon-based visible and near-infrared optoelectric devices.
  • Nikolai M. Krivitski ; Dimitry Starostin, Single light sensor optical probe for monitoring blood parameters and cardiovascular measurements.
  • Kawabata Kiyoshi (Itami JPX), Solar cell.
  • Niira, Koichiro; Senta, Hirofumi; Hakuma, Hideki, Solar cell device.
  • Wettling Wolfram,DEX ; Glunz Stefan,DEX, Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof.
  • Redfield David (Princeton NJ), Solar cell with grooved surface.
  • Sheng, Ping; Bloch, Aaron N., Solar cell with two-dimensional hexagonal reflecting diffraction grating.
  • Sheng Ping (Skillman NJ) Stepleman Robert S. (Scotch Plains NJ), Solar cell with two-dimensional reflecting diffraction grating.
  • Stanbery Billy J. (Seattle WA), Solar cells and methods for manufacture thereof.
  • Iizuka,Tetsuya; Ueno,Takahisa, Solid-state image pickup device and device driving control method for solid-state image pickup.
  • Tatani, Keiji, Solid-state image pickup device and image pickup apparatus with a low reflective film on the substrate.
  • Sumi, Hirofumi, Solid-state image sensor and method for manufacturing thereof as well as semiconductor device and method for manufacturing thereof.
  • Ohkubo, Tomohiro; Endo, Suzunori, Solid-state image sensor including a photoelectric conversion element, a charge conversion element, and a light shielding element, method for producing the same solid-state image sensor, and electronic apparatus including the same solid-state image sensor.
  • Iida, Yoshinori; Ueno, Risako; Suzuki, Kazuhiro; Funaki, Hideyuki, Solid-state imaging device.
  • Yamaguchi, Tetsuya; Goto, Hiroshige; Yamashita, Hirofumi; Inoue, Ikuko; Tanaka, Nagataka; Ihara, Hisanori, Solid-state imaging device and method of manufacturing the same.
  • Miyanami, Yuki, Solid-state imaging device, manufacturing method thereof, and electronic apparatus.
  • Yamaguchi, Tetsuji, Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus.
  • Watanabe, Kazufumi; Maruyama, Yasushi, Solid-state imaging device, method of manufacturing the same, and electronic apparatus.
  • Hiyama, Susumu; Watanabe, Kazufumi, Solid-state imaging device, method of manufacturing the same, and electronic equipment.
  • Oike, Yusuke, Solid-state imaging device, signal processing device and signal processing method for solid-state imaging device, and imaging apparatus.
  • Chance Britton, Spectrophotometer for measuring the metabolic condition of a subject.
  • Nishi Kenji,JPX, Stage apparatus, scanning type exposure apparatus, and device produced with the same.
  • Meier Daniel L. (Pittsburgh PA), Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell.
  • Pain, Bedabrata; Cunningham, Thomas J., Structure for implementation of back-illuminated CMOS or CCD imagers.
  • Sokol, David; Dulaney, Jeff; Toller, Steven M., Surface finishes on laser rods and slabs for laser peening systems.
  • Manivannan,Venkatesan; Ebong,Abasifreke Udo; Huang,Jiunn Ru Jeffrey; Feist,Thomas Paul; Johnson,James Neil, Surface passivated photovoltaic devices.
  • Fujii Hideo (Tokyo JPX), Surface reflecting mirror having a surface reflecting multilayer film.
  • Geng,Z. Jason; Tunnell,C. David, System and a method for a smart surveillance system.
  • Shepard, Chester L.; Cannon, Bret D.; Khaleel, Mohammad A., System and method for glass processing and temperature sensing.
  • Kerr, J. Richard; Zuro, Gregory A.; Fossey, Michael E., System for and method of synchronous acquisition of pulsed source light in performance of monitoring aircraft flight operation.
  • Mazur,Eric; Carey, III,James Edward; Crouch,Catherine H.; Younkin,Rebecca Jane; Wu,Claudia, Systems and methods for light absorption and field emission using microstructured silicon.
  • Ishihara Takashi (Itami JPX) Sasaki Hajime (Itami JPX) Aiga Masao (Itami JPX), Tandem solar cell.
  • Chakrabarti Utpal Kumar ; Grodkiewicz William Henry ; Wu Ping, Tantalum-aluminum oxide coatings for semiconductor devices.
  • Elliott Charles T. (Malvern GB2), Thermal imaging devices.
  • Heyers, Klaus; Frey, Wilhelm, Thermal membrane sensor and method for the production thereof.
  • Ishihara, Shunichi, Thin film polycrystalline solar cells and methods of forming same.
  • Lu, Jeng Ping; Mei, Ping; Boyce, James B., Thin phosphorus nitride film as an N-type doping source used in laser doping technology.
  • Lu, Jeng Ping; Mei, Ping; Boyce, James B., Thin phosphorus nitride film as an n-type doping source used in a laser doping technology.
  • Sichanugrist Porponth (Bangkok THX) Fujikake Shinji (Kanagawa JPX) Ota Hiromitsu (Kanagawa JPX), Thin-film solar cell and method of manufacturing same.
  • Enquist,Paul M.; Fountain,Gaius, Three dimensional device integration method and integrated device.
  • Clevenger,Lawrence A.; Hsu,Louis L.; Radens,Carl J.; Wang,Li Kong; Wong,Kwong Hon, Three-dimensional island pixel photo-sensor.
  • VanZeghbroeck Bart J. (Boulder CO), Two-dimensional optoelectronic array module.
  • Parrish, William J.; Aziz, Naseem Y., Two-stage auto-zero amplifier circuit for electro-optical arrays.
  • Forbes,Leonard, Ultra-thin semiconductors bonded on glass substrates.
  • Uraki Keiichi,JPX ; Satsuta Toshitaka,JPX ; Onuma Akira,JPX ; Nakamura Mitsuo,JPX ; Onuma Tsutomu,JPX ; Matsumoto Toshimi,JPX ; Tamai Yasumasa,JPX ; Yamauchi Hiroshi,JPX ; Hayashi Eisaku,JPX ; Morina, Underwater laser processing device including chamber with partitioning wall.
  • Parker, Brent, Universal modular pulse oximeter probe for use with reusable and disposable patient attachment devices.
  • Shields Steven E. (San Diego CA) Fletcher Bruce G. (Vista CA), Use of polysilicon for smoothing of liquid crystal MOS displays.
  • Sato, Hideo, Vein authentication apparatus, imaging apparatus for vein authentication, and vein illuminating method.
  • Kindt, Willem Johannes, Vertical color photo-detector with increased sensitivity and compatible video interface.
  • Holm, Paige M.; Candelaria, Jon J., Vertically integrated photosensor for CMOS imagers.
  • Holm,Paige M.; Candelaria,Jon J., Vertically integrated photosensor for CMOS imagers.
  • Dudley Dana (Dallas TX), Visible and near infrared imaging system.
  • McCaffrey, Nathaniel J.; Carey, James E., Wide spectral range hybrid image detector.
  • Carey, James E.; McCaffrey, Nathaniel J.; Pralle, Martin U., Wideband semiconducting light detector.
  • Gray, Jeremy; Cicero, Ronald L.; Grot, Annette; Popovich, Natasha; Dudek, Stephen, Zero-mode waveguides with non-reflecting walls.
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