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Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semic

Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semiconductor structure. A gas supply is coupled to the process chamber. A point-of-use gas enrichment module is coupled to the gas supply. The point-of-use gas enrichment module is configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber. The second gas composition has a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition.

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1. A method of fabricating a semiconductor structure, the method comprising: a process chamber for processing a substrate of a semiconductor structure;a gas supply coupled to the process chamber; anda point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment modul

1. A method of fabricating a semiconductor structure, the method comprising: a process chamber for processing a substrate of a semiconductor structure;a gas supply coupled to the process chamber; anda point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment module configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber, the second gas composition having a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition. 2. The system of claim 1, wherein the point-of-use gas enrichment module comprises a semi-permeable membrane, the semi-permeable membrane permeable to the hydride species. 3. The system of claim 1, wherein the point-of-use gas enrichment module comprises an electrochemical cell. 4. The system of claim 1, wherein the gas supply is configured to provide the second gas composition to the process chamber with a flow rate approximately in the range of 3-100 sccm. 5. The system of claim 1, wherein the point-of-use gas enrichment module is configured to humidify the first gas composition. 6. The system of claim 1, wherein the hydride species is selected from the group consisting of diborane (B2H6), phosphine (PH3), arsine (AsH3), silane (SiH4), disilane (Si2H6), and stibine (SbH3). 7. The system of claim 1, wherein the semiconductor structure is selected from the group consisting of a solar cell, an integrated circuit, a light-emitting diode, a display and a battery. 8. The system of claim 1, wherein the hydride species is phosphine (PH3), and the first gas composition has a first amount of phosphine of approximately 5% or less, and the second gas composition has a second amount of phosphine of approximately 50% or more. 9. The system of claim 1, wherein the hydride species is diborane (B2H6), and the first gas composition has a first amount of diborane of approximately 30% or less, and the second gas composition has a second amount of diborane of approximately 80% or more. 10. A system for fabricating a semiconductor structure, the system comprising: a process chamber for processing a substrate of a semiconductor structure;a gas supply coupled to the process chamber; anda point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment module configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber, the second gas composition having a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition, wherein the point-of-use gas enrichment module comprises a semi-permeable membrane, the semi-permeable membrane permeable to the hydride species, and wherein the hydride species is selected from the group consisting of diborane (B2H6), phosphine (PH3), arsine (AsH3), silane (SiH4), disilane (Si2H6), and stibine (SbH3). 11. The system of claim 10, wherein the gas supply is configured to provide the second gas composition to the process chamber with a flow rate approximately in the range of 3-100 sccm. 12. The system of claim 10, wherein the point-of-use gas enrichment module is configured to humidify the first gas composition. 13. The system of claim 10, wherein the semiconductor structure is selected from the group consisting of a solar cell, an integrated circuit, a light-emitting diode, a display and a battery. 14. A system for fabricating a semiconductor structure, the system comprising: a process chamber for processing a substrate of a semiconductor structure;a gas supply coupled to the process chamber; anda point-of-use gas enrichment module coupled to the gas supply, the point-of-use gas enrichment module configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber, the second gas composition having a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition, wherein the point-of-use gas enrichment module comprises an electrochemical cell, and wherein the hydride species is selected from the group consisting of diborane (B2H6), phosphine (PH3), arsine (AsH3), silane (SiH4), disilane (Si2H6), and stibine (SbH3). 15. The system of claim 14, wherein the gas supply is configured to provide the second gas composition to the process chamber with a flow rate approximately in the range of 3-100 sccm. 16. The system of claim 14, wherein the point-of-use gas enrichment module is configured to humidify the first gas composition. 17. The system of claim 14, wherein the semiconductor structure is selected from the group consisting of a solar cell, an integrated circuit, a light-emitting diode, a display and a battery.