Abstract ▼ AI-Helper

The properties of TiN as a barrier against Cu diffusion were studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage measurement, and the sensitivity of Cu diffusion detection was compared between the characteriza...

The properties of TiN as a barrier against Cu diffusion were studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage measurement, and the sensitivity of Cu diffusion detection was compared between the characterization methods. The samples with the structure of Cu(5000$\mbox{\AA}$)/TiN/Ti(300$\mbox{\AA}$)/ $SiO_2$(1000$\mbox{\AA}$)/Si were prepared by various deposition techniques. The sample were analyzed after annealing at from $500^\circ C$ to $800^\circ C$ in 10\%$H_2$/90\%Ar ambient for 2 hours. For C-V measurement, the MOS capacitors with the structure of Al/$SiO_2$/Si were made by wet etching and Al evaporation. By sheet resistance measurement, SEM and C-V measurement, it was conformed that the thinner TiN barrier fails at the lower temperature. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. The variations of C-V characteristics may be due to Cu which have diffused into $SiO_2$ and Si.

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