The density of localized states in a-$S_i$ prepared by vacuum evaporation was investigated by the Field Effect Techn que. Substrate temperature was 350$^\circ$C and deposition rates of less than 1.5A/sec were employed during deposition. The density of localized states at the Fermi level is about $10...
#Silicon Energy level densities 비정질 반도체 규소 상태 밀도 Amorphous semiconductors;
|총페이지||[ii], 34 p.|
|키워드||Silicon Energy level densities 비정질 반도체 규소 상태 밀도 Amorphous semiconductors|
DOI 인용 스타일