Abstract ▼ AI-Helper

The characteristics of poly-Si TFTs fabricated using poly-Si film deposited from $SiH_4$ (silane) and $Si_2H_6$ (disilane) have been investigated. The deposition temperature used in depositing poly-Si films, which affects significantly the structural characteristics of the deposited poly-Si film, wa...

The characteristics of poly-Si TFTs fabricated using poly-Si film deposited from $SiH_4$ (silane) and $Si_2H_6$ (disilane) have been investigated. The deposition temperature used in depositing poly-Si films, which affects significantly the structural characteristics of the deposited poly-Si film, was kept constant. the electrical characteristics of the poly-Si TFT with a poly-Si film deposited from $Si_2H_6$ were superior to that of the poly-Si TFT with a polySi film deposited from $SiH_4$. this difference in the electrical characteristics between two poly-Si TFTs may result from the difference in the structural characteristics between two poly-Si TFTs may result from the difference in the structural characteristics between two poly-Si films used as the active layer; that is, the poly-Si film deposited from $Si_2H_6$ has much better structural characteristics than that deposited from $SiH_4$ in the crystallinity, grain size, and microstructures. It can be concluded that the structural characteristics of a poly-Si film deposited from $Si_2H_6$ is superior to that deposited from $SiH_4$ and that the superiority of the structural characcteristics leads to the superiority of the electrical characteristics.

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