본 연구에서는 실시간 미세구조의 변화를 관찰할 수 있는 in-situ electromigration test 방법과 electromigration 수명평가에 용이한 ex-situ electromigration test 방법을 적용하여 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration 수명평가 및 손상기구 규명을 위한 연구를 실시하였다. 수...
본 연구에서는 실시간 미세구조의 변화를 관찰할 수 있는 in-situ electromigration test 방법과 electromigration 수명평가에 용이한 ex-situ electromigration test 방법을 적용하여 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration 수명평가 및 손상기구 규명을 위한 연구를 실시하였다. 수명평가 결과와 실시간 미세구조 분석을 병행하여 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration, Joule heating, thermomigration 현상을 정량적으로 평가하였으며, 소형화 및 고성능화 추세에 따른 여러 가지 구조적인 사이즈의 감소가 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration 신뢰성에 미치는 영향에 대해 연구하였다.
본 연구에서는 실시간 미세구조의 변화를 관찰할 수 있는 in-situ electromigration test 방법과 electromigration 수명평가에 용이한 ex-situ electromigration test 방법을 적용하여 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration 수명평가 및 손상기구 규명을 위한 연구를 실시하였다. 수명평가 결과와 실시간 미세구조 분석을 병행하여 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration, Joule heating, thermomigration 현상을 정량적으로 평가하였으며, 소형화 및 고성능화 추세에 따른 여러 가지 구조적인 사이즈의 감소가 플립칩 Sn-3.5Ag 솔더 범프에서의 electromigration 신뢰성에 미치는 영향에 대해 연구하였다.
The increasing demand for smaller consumer electronic devices with higher performance requires advanced chip interconnect thchnology such as flip chip solder bumps which are suitable for high-performance devices with higher I/O densities and shorter interconnect lengths. The high current density of ...
The increasing demand for smaller consumer electronic devices with higher performance requires advanced chip interconnect thchnology such as flip chip solder bumps which are suitable for high-performance devices with higher I/O densities and shorter interconnect lengths. The high current density of flip chip solder bump and the elevated chip temperature relative to the low melting temperature of the solder material can lead to serious electromigration failure issues. Compared to the electromigration characteristics of chip interconnects, this is a much more complex failure phenomenon that is related to factors such as current crowding, Joule heation, intermetallic compound decomposition, Kirkendall voiding and thermomigration that arise because of the unique geometry, interfacial under-bump metallurgy(UBM) structure, and complex material structures. Pb-free solder material has replaced Pb-containing eutectic SnPb as solder bump material. One of the most popular Pb-free solder alternatives for flip chip solder materials is electroplated eutectic Sn-3.5Ag solder. Although there have been many reports on the electromigration of Pb-free flip chip solder bump using interrupt electromigration testing, detailed understanding of these complex multi-mode failure phenomena is lacking.
In this work, electromigration lifetimes and failure mechanism were evaluated for flip chip Sn-3.5Ag solder bumps with Cu under-bump metallurgy. Electromigration testing in a scanning electron microscope and in an oven was performed at 120∼180℃, 3∼9x104A/cm2 to correlate the statistical lifetimes with the detailed microstructural characteristics. The activation energy and current density exponent were evaluated as a result of electromigration lifetime tests. Electromigration and thermomigration phenomenon were quantitatively analyzed to deduce various parameters such as Cu consumption rate, interfacial voids parpagation rate, DZ*, and size effect of flip chip solder bump on electromigration lifetimes were evaluated.
The increasing demand for smaller consumer electronic devices with higher performance requires advanced chip interconnect thchnology such as flip chip solder bumps which are suitable for high-performance devices with higher I/O densities and shorter interconnect lengths. The high current density of flip chip solder bump and the elevated chip temperature relative to the low melting temperature of the solder material can lead to serious electromigration failure issues. Compared to the electromigration characteristics of chip interconnects, this is a much more complex failure phenomenon that is related to factors such as current crowding, Joule heation, intermetallic compound decomposition, Kirkendall voiding and thermomigration that arise because of the unique geometry, interfacial under-bump metallurgy(UBM) structure, and complex material structures. Pb-free solder material has replaced Pb-containing eutectic SnPb as solder bump material. One of the most popular Pb-free solder alternatives for flip chip solder materials is electroplated eutectic Sn-3.5Ag solder. Although there have been many reports on the electromigration of Pb-free flip chip solder bump using interrupt electromigration testing, detailed understanding of these complex multi-mode failure phenomena is lacking.
In this work, electromigration lifetimes and failure mechanism were evaluated for flip chip Sn-3.5Ag solder bumps with Cu under-bump metallurgy. Electromigration testing in a scanning electron microscope and in an oven was performed at 120∼180℃, 3∼9x104A/cm2 to correlate the statistical lifetimes with the detailed microstructural characteristics. The activation energy and current density exponent were evaluated as a result of electromigration lifetime tests. Electromigration and thermomigration phenomenon were quantitatively analyzed to deduce various parameters such as Cu consumption rate, interfacial voids parpagation rate, DZ*, and size effect of flip chip solder bump on electromigration lifetimes were evaluated.
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