Transparent thin film transistors (TTFTs) with active channel oxide layers are currently of great interest in transparent-electronics applications, such as flat panel displays, flexible displays, radio-frequency identification tags, and smart windows. These interests encompass both basic research an...
Transparent thin film transistors (TTFTs) with active channel oxide layers are currently of great interest in transparent-electronics applications, such as flat panel displays, flexible displays, radio-frequency identification tags, and smart windows. These interests encompass both basic research and industrial applications. For the latter, they are excellent candidates for active matrix organic light emitting diode (AMOLED) backplanes and active matrix liquid crystal displays (AMLCD). Metal oxide semiconductors have many desirable characteristics: transparency due to their large band gap, high-uniformity in large-scale fabrication applications, environmental stability, and high field-effect. Many transparent oxide semiconductors (TOSs), such as zinc oxide, indium-zinc oxide, zinc-tin oxide, indium-gallium-zinc oxide, and indium oxide have been reported for transparent channel layers in TTFTs. However, TOSs are often prepared by high-cost vacuum-deposition methods, such as RF-magnetron sputtering and pulsed laser deposition. Solution processed thin film deposition techniques, such as in the sol-gel method, offer many advantages over vacuum-deposition processes: simplicity, high throughput, and low-cost. In addition, it (solution processing) enables direct patterning that could replace conventional photolithographic techniques. Property of sol-gel derived ZnO, however, is not sufficient to drive display circuits compared to vacuum process. In order to improve the electrical property of ZnO TFTs, heat treatment process was mainly investigated previously. In this study to improve the electrical property of the ZnO TFTs various variables were controlled. In the process of synthesizing solution, concentration and amount of chelating agent were controlled. And thickness of the films and heat treatment conditions were controlled. With optimized conditions, fabricated ZnO TFTs show good electrical property which is sufficient to drive various displays.
Transparent thin film transistors (TTFTs) with active channel oxide layers are currently of great interest in transparent-electronics applications, such as flat panel displays, flexible displays, radio-frequency identification tags, and smart windows. These interests encompass both basic research and industrial applications. For the latter, they are excellent candidates for active matrix organic light emitting diode (AMOLED) backplanes and active matrix liquid crystal displays (AMLCD). Metal oxide semiconductors have many desirable characteristics: transparency due to their large band gap, high-uniformity in large-scale fabrication applications, environmental stability, and high field-effect. Many transparent oxide semiconductors (TOSs), such as zinc oxide, indium-zinc oxide, zinc-tin oxide, indium-gallium-zinc oxide, and indium oxide have been reported for transparent channel layers in TTFTs. However, TOSs are often prepared by high-cost vacuum-deposition methods, such as RF-magnetron sputtering and pulsed laser deposition. Solution processed thin film deposition techniques, such as in the sol-gel method, offer many advantages over vacuum-deposition processes: simplicity, high throughput, and low-cost. In addition, it (solution processing) enables direct patterning that could replace conventional photolithographic techniques. Property of sol-gel derived ZnO, however, is not sufficient to drive display circuits compared to vacuum process. In order to improve the electrical property of ZnO TFTs, heat treatment process was mainly investigated previously. In this study to improve the electrical property of the ZnO TFTs various variables were controlled. In the process of synthesizing solution, concentration and amount of chelating agent were controlled. And thickness of the films and heat treatment conditions were controlled. With optimized conditions, fabricated ZnO TFTs show good electrical property which is sufficient to drive various displays.
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