Since the development of a piezoresistive silicon accelerometer by L. M. Roylance and J. B. Angell in 1979, micromachined silicon accelerometers have been used in many devices including automobiles, portable electronics, biomedical, and military. In order to measure incident acceleration, a variety ...
Since the development of a piezoresistive silicon accelerometer by L. M. Roylance and J. B. Angell in 1979, micromachined silicon accelerometers have been used in many devices including automobiles, portable electronics, biomedical, and military. In order to measure incident acceleration, a variety of micromachined silicon accelerometer technologies have been adopted (e.g., capacitive, piezoresistive, piezoelectric, resonant, optical). Among these, the capacitive and piezoresistive detection devices have been widely used and successfully commercialized. The capacitive detection method is generally used in those situations (including automobiles and portable electronics) which require a relatively low-level acceleration (~1,000 g). On the other hand, the piezoresistive detection method is preferred for high-level acceleration (> 1,000 g) of which applications include vehicle crash analysis and bomb fuses.
In this paper, a high-shock (2,000 g) accelerometer is presented, with suspended piezoresistive sensing bridges and four hinges. Unlike cantilever-type accelerometers that have suspended piezoresistors, the mass of the proposed accelerometer is connected with four hinges. An optimal design process has been conducted to obtain the structural sizes, and numerical simulation has been carried out on the model-design using commercial software. The silicon accelerometer chips are fabricated using silicon micro-electro-mechanical system (MEMS) fabrication techniques, and the chips are packaged with ceramic boards. Their performance has been evaluated regarding sensitivity, linearity, and over-shock survivability.
A sensitivity of 25.5 μV/g has been measured from the fabricated accelerometer with a nonlinearity of 0.2% in an acceleration range within 2,000 g. The real-time response of the fabricated accelerometers accurately follows the reference accelerometer. The newly fabricated accelerometer has survived an over-shock condition of 4,667 g. The proposed accelerometer can be directly applied to a wide variety of applications where there is a need to measure high-level acceleration, including vehicle crash analysis and bomb fuses.
Since the development of a piezoresistive silicon accelerometer by L. M. Roylance and J. B. Angell in 1979, micromachined silicon accelerometers have been used in many devices including automobiles, portable electronics, biomedical, and military. In order to measure incident acceleration, a variety of micromachined silicon accelerometer technologies have been adopted (e.g., capacitive, piezoresistive, piezoelectric, resonant, optical). Among these, the capacitive and piezoresistive detection devices have been widely used and successfully commercialized. The capacitive detection method is generally used in those situations (including automobiles and portable electronics) which require a relatively low-level acceleration (~1,000 g). On the other hand, the piezoresistive detection method is preferred for high-level acceleration (> 1,000 g) of which applications include vehicle crash analysis and bomb fuses.
In this paper, a high-shock (2,000 g) accelerometer is presented, with suspended piezoresistive sensing bridges and four hinges. Unlike cantilever-type accelerometers that have suspended piezoresistors, the mass of the proposed accelerometer is connected with four hinges. An optimal design process has been conducted to obtain the structural sizes, and numerical simulation has been carried out on the model-design using commercial software. The silicon accelerometer chips are fabricated using silicon micro-electro-mechanical system (MEMS) fabrication techniques, and the chips are packaged with ceramic boards. Their performance has been evaluated regarding sensitivity, linearity, and over-shock survivability.
A sensitivity of 25.5 μV/g has been measured from the fabricated accelerometer with a nonlinearity of 0.2% in an acceleration range within 2,000 g. The real-time response of the fabricated accelerometers accurately follows the reference accelerometer. The newly fabricated accelerometer has survived an over-shock condition of 4,667 g. The proposed accelerometer can be directly applied to a wide variety of applications where there is a need to measure high-level acceleration, including vehicle crash analysis and bomb fuses.
Keyword
#가속도센서설계 가속도센서감지
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