Organic-inorganic halide perovskite-based optoelectronics are in spotlight as promising materials for light sensing devices to be used in the 4th industrial revolution, because of their merits such as excellent photoelectric properties, easy fabrication process, low cost and high flexibility. Existi...
Organic-inorganic halide perovskite-based optoelectronics are in spotlight as promising materials for light sensing devices to be used in the 4th industrial revolution, because of their merits such as excellent photoelectric properties, easy fabrication process, low cost and high flexibility. Existing halide perovskite photodiode devices have an inorganic-perovskite-organic heterojunction structure, which requires a relatively high temperature when synthesizing oxide materials, and has disadvantages in that the driving speed of the device is slow due to the large number of bonding interfaces. Therefore, in order to realize a photodiode with the same type of junction, perovskite-perovskite stacking was attempted. However, the perovskite also has disadvantages in that an alloy is formed when the n/p type junction is formed, and it is difficult to stack with the existing solution process. For that reason, an all halide perovskite junction photodetector was devised. In this study, 3D/2D junction photodetecting device was implemented, and 2D material, which was not revealed in previous studies, was investigated. The 2D perovskite material of previous studies was identified through crystallographic, optical, and DFT calculations. As a result of fabricating the device and analyzing its photoelectric properties, it showed results similar to or higher than those of the existing organic-perovskite-inorganic devices.
Organic-inorganic halide perovskite-based optoelectronics are in spotlight as promising materials for light sensing devices to be used in the 4th industrial revolution, because of their merits such as excellent photoelectric properties, easy fabrication process, low cost and high flexibility. Existing halide perovskite photodiode devices have an inorganic-perovskite-organic heterojunction structure, which requires a relatively high temperature when synthesizing oxide materials, and has disadvantages in that the driving speed of the device is slow due to the large number of bonding interfaces. Therefore, in order to realize a photodiode with the same type of junction, perovskite-perovskite stacking was attempted. However, the perovskite also has disadvantages in that an alloy is formed when the n/p type junction is formed, and it is difficult to stack with the existing solution process. For that reason, an all halide perovskite junction photodetector was devised. In this study, 3D/2D junction photodetecting device was implemented, and 2D material, which was not revealed in previous studies, was investigated. The 2D perovskite material of previous studies was identified through crystallographic, optical, and DFT calculations. As a result of fabricating the device and analyzing its photoelectric properties, it showed results similar to or higher than those of the existing organic-perovskite-inorganic devices.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.