Next-generation displays require flexible, transparent, and low-power display devices. Therefore, research is being focused on oxide-based TFT (Thin Film Transistor), which is a transparent and flexible display driving and switching device that has excellent mobility even in an amorphous state, can ...
Next-generation displays require flexible, transparent, and low-power display devices. Therefore, research is being focused on oxide-based TFT (Thin Film Transistor), which is a transparent and flexible display driving and switching device that has excellent mobility even in an amorphous state, can be processed at low temperatures. Representatively, there is IGZO with indium and gallium added. However, in the case of In and Ga, rare earth metals have limited reserves and their price competitiveness is low, so research to replace them is actively underway.
In this study, Ge was added instead of Ga to IZO using a solution process to investigate the characteristics of an oxide-based TFT channel layer. The optimum conditions of the thin film were investigated by setting the heat treatment temperature conditions to 300ºC, 400ºC and 500ºC respectively. In order to analyze the physical properties of Ge-IZO thin films according to the heat treatment temperature conditions, SEM, XRD, AFM, XPS, and UV-VIS were used, and the electrical properties were checked through a probe station. When the heat treatment temperature is 500°C, the field effect mobility, the ratio of the on/off current, the threshold voltage, and the slope below the gate threshold voltage are respectively 1.44〖cm〗^2/V·s, 2.01x10^6, 2.09V and 1.86 V/decade value, showing the best value. Through this, as the heat treatment temperature increased, it showed better electrical performance and stability as a TFT. Based on this, the Ge-IZO metal oxide thin film transistor fabricated through this showed the possibility of being applied to flexible displays and transparent electronic devices, and a low cost metal oxide thin film transistor could be fabricated using a solution process.
Next-generation displays require flexible, transparent, and low-power display devices. Therefore, research is being focused on oxide-based TFT (Thin Film Transistor), which is a transparent and flexible display driving and switching device that has excellent mobility even in an amorphous state, can be processed at low temperatures. Representatively, there is IGZO with indium and gallium added. However, in the case of In and Ga, rare earth metals have limited reserves and their price competitiveness is low, so research to replace them is actively underway.
In this study, Ge was added instead of Ga to IZO using a solution process to investigate the characteristics of an oxide-based TFT channel layer. The optimum conditions of the thin film were investigated by setting the heat treatment temperature conditions to 300ºC, 400ºC and 500ºC respectively. In order to analyze the physical properties of Ge-IZO thin films according to the heat treatment temperature conditions, SEM, XRD, AFM, XPS, and UV-VIS were used, and the electrical properties were checked through a probe station. When the heat treatment temperature is 500°C, the field effect mobility, the ratio of the on/off current, the threshold voltage, and the slope below the gate threshold voltage are respectively 1.44〖cm〗^2/V·s, 2.01x10^6, 2.09V and 1.86 V/decade value, showing the best value. Through this, as the heat treatment temperature increased, it showed better electrical performance and stability as a TFT. Based on this, the Ge-IZO metal oxide thin film transistor fabricated through this showed the possibility of being applied to flexible displays and transparent electronic devices, and a low cost metal oxide thin film transistor could be fabricated using a solution process.
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#Ge-IZO (Ge dopde IZO) TFT (Thin Film Transistor)
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