실리콘의 dry oxidation과 wet oxidation공정의 특성을 실험적으로 조사하였다. 산화온도는1,100℃, 1.150℃, 1.200℃를 사용하였고, 산소의 유량은 0.2 liter/min으로 부터 2.8 liter/min까지 변화시켰다. 산화막의 두께를 측정하여 0.1μ ∼ 1.0μ 을 성장시키는데 필요한 온도, 시간, 산소의 유량을 도표로 나타냈다. 산화막의 특성을 조사하기 위하여 유전 상수절연파괴 전압, fixed surface charge density (Qss/q), mobile ciarge densify (Q /q)를 측정하였다. 측정 결과로부터 산화막이 MOS transistor에도 적합한 양질이라는 결론을 얻었다.
실리콘의 dry oxidation과 wet oxidation공정의 특성을 실험적으로 조사하였다. 산화온도는1,100℃, 1.150℃, 1.200℃를 사용하였고, 산소의 유량은 0.2 liter/min으로 부터 2.8 liter/min까지 변화시켰다. 산화막의 두께를 측정하여 0.1μ ∼ 1.0μ 을 성장시키는데 필요한 온도, 시간, 산소의 유량을 도표로 나타냈다. 산화막의 특성을 조사하기 위하여 유전 상수 절연파괴 전압, fixed surface charge density (Qss/q), mobile ciarge densify (Q /q)를 측정하였다. 측정 결과로부터 산화막이 MOS transistor에도 적합한 양질이라는 결론을 얻었다.
Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experi...
Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experimental measurements, oxidation temperaturel time and oxygen flow rate have been tabutated for oxide layers 0.1$\mu$ - 1.0$\mu$ in thickness. The quality of the grown oxide layer has been investigated In terms of the dielectric constant, breakdown voltage, fixed surface charge densify (Qss/q) and mobile charge density (Q /q). From these measurements, it is concluded that the quality of the oxide layer is sufficient to expect the normal operation of MOS transistors.
Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experimental measurements, oxidation temperaturel time and oxygen flow rate have been tabutated for oxide layers 0.1$\mu$ - 1.0$\mu$ in thickness. The quality of the grown oxide layer has been investigated In terms of the dielectric constant, breakdown voltage, fixed surface charge densify (Qss/q) and mobile charge density (Q /q). From these measurements, it is concluded that the quality of the oxide layer is sufficient to expect the normal operation of MOS transistors.
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