초록

본 연구에서는 InGaAsP/InP RWG MQW-LD를 제작하기 앞서 이론해석으로부터 RWG MQW-LD의 도파로규격에 따른 측방향 유효굴절율차와 index-guided LD로 동작하는 임계 유효굴절율차의 값, 그리고 이러한 굴절율차에 따른 측방향에서의 단일모드 발진조건과 임계전류를 최소로 하기 위한 ridge 폭을 구하여 도파로를 설계하였다. 이론해석으로 부터는 순수한 index-guided LD로 동작하기 위한 측방향 임계 유효굴절율차 값은 일반적인 bulk층 보다는 약 2배 정도 큰 값인 약 0.015이었으며 도파로 설계에 있어서는 유효굴절율차가 0.015이며 측방향단일모드로 동작하기 위해서는 ridge 폭은 약 4.mu.m이하가 되어야 함을 알 수 있었다. 그리고 이때 임계전류값이 최소가 됨을 지적하였다.

Abstract

Recently interest in the fabrication of LD operated by low current is gradually increasing as fabrication techniques of MQW-LD are progressed. In this viewpoint, theoretical estimation for decreasing the amount of threshold current will be helpful to design and make LD in case that active layer of conventional bulk type RWG-LD structure is replaced with MQW structure. Therefore, the optimum design condition of RWG MQW-LD was obtained from theoretical analysis in order to operate in the weakly index-guided LD and low threshold current. The lateral effective index step has been obtained in RWG MQW-LD structure. Waveguide mechanism including this index step has been investigated by solving the carrier diffusion equation and lateral wave equation. From these theoretical results, the optimum design condition of RWG MQW-LD have been suggested.

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이 논문을 인용한 문헌 (1)

1. 2001. "The optimum design of MQW Buried-RWG LD" 한국광학회지 = Korean journal of optics and photonics, 12(4): 312~319  원문보기 상세보기