초록

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Abstract ▼ AI-Helper

The purpose of this research was to investigate the characteristics and the cleaning efficiency on HN(sub)4OH solutions added with H(sub)2O(sub)2 and surfactants. NH(sub)4OH solutions added with surfactants did not show much changes in pH and redox potential (Eh) as a function of NH(sub)4OH concentr...

The purpose of this research was to investigate the characteristics and the cleaning efficiency on HN(sub)4OH solutions added with H(sub)2O(sub)2 and surfactants. NH(sub)4OH solutions added with surfactants did not show much changes in pH and redox potential (Eh) as a function of NH(sub)4OH concentration compared with NH(sub)4OH solution. However H(sub)2O(sub)2 added NH\ulcornerOH solutions showed the decrease of pH and the increase of Eh as the concentration of NH(sub)4OH increased. The decrease of surface tension from 72 dynes/cm to 38 dynes/cm was observed in solutions added with surfactant but not in H(sub)2O(sub)2. The etch rates of silicon in NH(sub)4OH solutions(NH(sub)4OH:H(sub)2O= 1 : 5) showed at least 50 times higher than those in H(sub)2O(sub)2 and surfactant added NH(sub)4OH solutions(NH(sub)4OH:H(sub)2O(sub)2= 1 : 1 : 5) solution removed the PSL particles (0.67$\mu\textrm{m}$ in diameter) on Si wafers effectively at all temperatures investigated. NH(sub)4OH solution added with a surfactant could not remove particles at room temperature, however it was possible to remove particles at higher temperatures, 5$0^{\circ}C$ and 8$0^{\circ}C$.