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Abstract ▼ AI-Helper

Low resistance ohmic contacts to the Si-doped $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$(~$\times10^{19}\textrm{cm}^{-3}$) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance i...

Low resistance ohmic contacts to the Si-doped $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$(~$\times10^{19}\textrm{cm}^{-3}$) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at $950^{\circ}C$ for 90 s, which results in a specific contact resistance of $2.75\times10^{-8}\Omega\textrm{cm}^{-3}$. Interfacial reactions and surface are analyzed using x-ray diffraction and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$ produce a $\beta$-$W_2N$ phase at the interface. The SEM result shows that the morphology of the contacts is stable up to a temperature as high as $850^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.