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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.38 no.10 = no.292, 2001년, pp.678 - 686
최경진 (포항공과대학교 신소재공학과) , 이종람 (포항공과대학교 신소재공학과)
Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 ...
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