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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.42 no.5 = no.335, 2005년, pp.1 - 8
최문성 (한국외국어대학교 전자정보공학부) , 이용택 (한국외국어대학교 전자정보공학부) , 구자남 (삼성종합기술원 MEMS Lab) , 이성현 (한국외국어대학교 전자정보공학부)
A RC parallel gate model is used to consider gate distributed effect that affects RF MOSFET performance, and extraction formula based on
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