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전기화학회지 = Journal of the Korean Electrochemical Society, v.8 no.3, 2005년, pp.130 - 134
이관희 (한국과학기술연구원 재료연구부) , 이종욱 (한국과학기술연구원 재료연구부) , 박호동 (한국과학기술연구원 재료연구부) , 정원용 (한국과학기술연구원 재료연구부) , 이종엽 (㈜우리정도)
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To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solution of indium chloride, antimony chloride, citr...
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A. Okamoto, H. Geka, I. Shibasaki, and K. Yoshida, 'Transport properties of InSb and InAs thin films on GaAs substrates', J. Cryst. Growth, 278, 604 (2005)
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이관희, 정원용, 이종엽, '전기도금에 의한 화학양론을 만족하는 III-V족 화합물 반도체 InSb의 제조방법', 대한민국 발명특허, 2004-0083711
K. H. Lee, J. Y. Lee, and W. Y. Jeung, 'III-V compound semiconductor InSb films electrodeposited from aqueous citric solutions', ECS 206th meeting, Abs. 48, Honolulu, Hawaii, 2004
K. H. Lee, J. Y. Lee and W. Y. leung, 'Electrical properties and characterization of the electrodeposited InSb semiconductor nanowires' , ECS 206th meeting, Abs. 191, Honolulu, Hawaii, 2004
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