Abstract

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

주제어

#Radiation effect   #MOSFET   #threshold voltage   #breakdown voltage   #dose rate   #total dose   # $\gamma-radiation$  

저자의 다른 논문

참고문헌 (7)

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이 논문을 인용한 문헌 (2)

1. 2010. "" International journal of aeronautical and space sciences, 11(3): 201~205  원문보기 상세보기
2. 2011. "" 전기전자학회논문지 = Journal of IKEEE, 15(2): 143~148  원문보기 상세보기