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NTIS 바로가기韓國眞空學會誌 = Journal of the Korean Vacuum Society, v.14 no.4, 2005년, pp.222 - 228
장경화 (서울시립대학교 화학공학과) , 권명석 (서울시립대학교 신소재공학과) , 조성일 (서울시립대학교 화학공학과)
Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electric...
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