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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.43 no.12 = no.354, 2006년, pp.33 - 39
An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model par...
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