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Journal of semiconductor technology and science, v.6 no.3, 2006년, pp.175 - 181
Burm, Jin-Wook (Dept. of Electronic Engineering, Sogang University) , Kim, Jae-Kwon (Dept. of Electronic Engineering, Sogang University)
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Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper....
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J. Burm and L. F. Eastman, Chapter 4.3, 'AlGaN/GaN HFETs/HEMTs', EMIS Datareview Series, IEE, No. 23, 1999
S. N. Mohammad, A. A. Salvador, and H. Morkoc, Proceedings of The IEEE (USA) vol. 83, p.1326, 1995
H. Morkoc, R. Cingolani, B. Gil, 'Polarization effects in nitride semiconductors and device structures', Mat. Res. Innovat. 3, pp.97-106, Springer-Verlag, 1999
M.A. Khan, Q. Chen, M.S. Shur, B.T. Dermott, J.A.Higgins, J. Burm, W. Schaff and L.F. Eastman, 'Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1GHz cutoff frequency,' Electron. Lett., vol. 32, no. 4, pp. 357-358, 1996
Y.S. Park, 'Current Status of Group III-Nitride Semiconductors and Future Prospects,' J. Korean Physical Society, vol. 34, pp. S199-S219, 1998
H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, 'Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,' Appl. Phys. Lett., vol. 48, no. 3, pp.353-355, 1986
A. Wakejima, K. Matsunaga, Y. Okamoto, Y. Ando, T. Nakayama and H. Miyamoto, '370W output power GaN-FET amplifier for W-CDMA cellular base stations,' Electronics letters, vol. 41, no. 25, pp. 1371-1372, 2005
G. Meneghesso, Giovanni Verzellesi, Roberto Pierobon, Fabiana Rampazzo, Alessandro Chini, Umesh K. Mishra, Claudio Canali, Associate , and E. Zanoni, 'Surface-Related Drain Current Dispersion Effects in AlGaN？GaN HEMTs,' IEEE Trans. on Electron Devices, vol. 51, no. 10, pp. 1554-1561, 2004
M. Micovic, N. X. Nguyen, P. Janke, W.-S. Wong, P. Hashimoto, L. M. McCray, and C. Nguyen, 'GaN/AlGaN high electron mobility transistor with f of 110 GHz,' Electron. Lett., vol. 36, no. 4, pp. 358？359, 2000
T. Inoue, Y. Ando, K. Kasahara, Y. Okamoto, T. Nakayama, H. Miyamoto, and M. Kuzuhara, 'Advanced RF characterization and delay-time analysis of short channel AlGaN/GaN heterojunc tion FETs,' IEICE Trans. Electron., vol. E86-C, no. 10, pp. 2065？2070, 2003
N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, and U. K. Mishra, 'High Breakdown GaN HEMT with Overlapping Gate Structure', IEEE Electron Device Letters, vol. 21, no. 9, pp. 421-423, 2000
Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, '30-W/mm GaN HEMTs by Field Plate Optimization,' IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, 2004
A. Wakejima, K. Matsunaga, Y. Okamoto, Y. Ando, T. Nakayama, K. Kasahara and H. Miyamoto, '280W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations', Electronics Letters, vol. 14, no. 18, pp. 1004 ？ 1005, 2005
Y. Okamoto, A. Wakejima, Y. Ando, T. Nakayama, K. Matsunaga and H. Miyamoto, '100W C-band single-chip GaN FET power amplifier,' Electronics Letters, vol. 42 no. 5, pp. 283 - 285, 2006
F. van Raay, R. Quay, R. Kiefer, F. Benkhelifa, B. Raynor, W. Pletschen, M. Kuri, H. Massler, S. Muller, M. Dammann, M. Mikulla, M. Schlechtweg, and G. Weimann, 'A Coplanar X-Band AlGaN/GaN Power Amplifier MMIC on s.i. SiC Substrate,' IEEE Microwave and Wireless Component Letters, vol. 15, no. 7, pp. 460-462, 2005
Takashi Inoue, Yuji Ando, Hironobu Miyamoto, Tatsuo Nakayama, Yasuhiro Okamoto, Kohji Hataya, and Masaaki Kuzuhara, '30-GHz-Band Over 5-W Power Performance of Short-Channel AlGaN/GaN Heterojunction FETs,' IEEE Trans. ON Microwave Theory and Techniques, vol. 53, no. 1, pp. 74-80, 2005
Steven Gao, Hongtao Xu, Sten Heikman, Umesh K. Mishra, and Robert A. York, 'Two-Stage Quasi-Class-E Power Amplifier in GaN HEMT Technology,' IEEE Microwave and Wireless Components Letters, vol. 16, no. 1, pp. 28-30, 2006
Hongtao Xu, Steven Gao, Sten Heikman, Stephen I. Long, Umesh K. Mishra, and Robert A. York, 'A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9 GHz,' IEEE Microwave and Wireless Components Letters, vol. 16, no. 1, pp. 22-24, 2006
S. Gao, C. Sanabria, H. Xu, S.I. Long, S. Heikman, U. Mishra and R.A. York, 'MMIC class-F power amplifiers using field-plated GaN HEMTs,' IEE Proc.-Microw. Antennas Propag., vol. 153, no. 3, pp. 259-262, 2006
Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. A. Khan, 'High-Power Operation of III-N MOSHFET RF Switches,' IEEE Microwave and Wireless Components Letters, vol. 15, no. 12, pp. 850-852, 2005
A. Chini, J. Wittich, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, 'Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate,' IEEE Electron Device Letters, vol. 25, no. 2, pp. 55-57, 2004
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