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NTIS 바로가기Transactions on electrical and electronic materials, v.8 no.1, 2007년, pp.36 - 40
Lee, Ho-Nyeon (Department of Display and Electronic Information Engineering, Soon Chun Hyang University) , Lee, Young-Gu (Display Device & Material Lab., Samsung Advanced Institute of Technology) , Ko, Ik-Hwan (Display Device & Material Lab., Samsung Advanced Institute of Technology) , Kang, Sung-Kee (Display Device & Material Lab., Samsung Advanced Institute of Technology) , Lee, Seong-Eui (Department of Advanced Materials Engineering, Korea Polytechnic University) , Oh, Tae-Sik (Division of Electronic Engineering, Sun Moon University)
Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator....
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