Zhuanga, Yun
(Araca Incorporated)
,
Borucki, Leonard
(Araca Incorporated)
,
Philipossian, Ara
(Araca Incorporated)
,
Dien, Eric
(Kemesys)
,
Ennahali, Mohamed
(Kemesys)
,
Michel, George
(Kemesys)
,
Laborie, Bernard
(Kemesys)
,
Zhuang, Yun
(Department of Chemical and Environmental Engineering, University of Arizona)
,
Keswani, Manish
(Department of Chemical and Environmental Engineering, University of Arizona)
,
Rosales-Yeomans, Daniel
(Department of Chemical and Environmental Engineering, University of Arizona)
,
Lee, Hyo-Sang
(Department of Chemical and Environmental Engineering, University of Arizona)
,
Philipossian, Ara
(Department of Chemical and Environmental Engineering, University of Arizona)
In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad ...
In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.
In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.
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제안 방법
A modified two-step Langmuir-Hinshelwood kinetic model was used to analyze the measured ILD removal rates. In this model, it is assumed that n moles of reactant R in the slurry react with the ILD wafer surface film (5) at rate kj to form a surface layer L,
The same diamond conditioner rotational velocity, oscillation frequency, and conditioning pressure were used for in-situ pad conditioning during the silicon wafer polishing. After the 10-minute silicon wafer polishing, 200-mm blanket ILD wafers were polished at 3 polishing pressures (1, 3 and 5 PSI) and 2 sliding velocities (0.5 and 1.5 m/s) with in-situ pad conditioning. The slurry flow rate, diamond conditioner rotational velocity and oscillation frequency, and conditioning pressure remained unchanged.
All polishing experiments were performed on a 200-mm Fujikoshi polisher, which has the ability to acquire real-time shear force data critical for determining the coefficient of friction (COF) and lubrication mechanism. The novel slurry was provided by Kemesys (Peynier, France) and used ceria as the abrasive.
removal rate selectivity[l]. In this study, a novel slurry containing ceria abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for ILD CMP processing. The slurry was used to polish blanket 200-mm ILD wafers on an IC1000™ K-groove pad with in-situ conditioning under different polishing press나res and sliding velocities.
In this study, a novel slurry containing ceria as the abrasive was analyzed in terms of its frictional, thermal and kinetic attributes for ILD CMP. The tribological study indicates that boundary lubrication was the dominant lubrication mechanism during polishing.
The model uses transient flash heating to estimate the chemical reaction temperature and successfully simulates the non-Prestonian removal rate behavior at the pxV=51J00 W/m2. The model was used to analyze the chemical and mechanical action dominance and indicates that the polishing process was mechanical limited in the lowpxV polishing region and became chemically and mechanically balanced with the increase of the polishing power.
대상 데이터
The slurry was used to polish 200-mm blanket ILD wafers on an IC1000™ K-groove pad with a Suba IV subpad. The ILD wafer surface film consisted of about 2 gm thermally grown silicon dioxide. The ILD film thickness was measured before and after polishing by a Gaertner LES-WS reflectometer to determine the ILD removal rate.
mechanism. The novel slurry was provided by Kemesys (Peynier, France) and used ceria as the abrasive. The average abrasive particle size was about 80 nm and the abrasive concentration in the slurry was 2 % (weight percent).
참고문헌 (3)
Y. Zhuang, D. King, T. Kido, and A. Philipossian, 'Frictional and removal rate studies of silicon dioxide and silicon nitride CMP using novel cerium dioxide abrasive slurries', Jpn. J. Appl. Phys., Vol. 44, No. 1A, p. 30,2005
A. Philipossian and S. Olson, 'Fundamental and removal rate studies of inter-layer dielectric chemical mechanical planarization', Jpn. J. Appl. Phys., Vol. 42, No. 10, p. 6371,2003
J. Sorooshian, L. Borucki, D. Stein, R. Timon, D. Hetherington, and A. Philipossian, 'Revisiting the removal rate model for oxide CMP', Trans. ASME J. Tribology, Vol. 127, No.3, p. 639, 2005
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