[논문]Analysis of Temperature Effects on Raman Silicon Photonic Devices

Kim, Won-Chul; Park, Dong-Wook

doi:10.3807/josk.2008.12.4.288

Analysis of Temperature Effects on Raman Silicon Photonic Devices 원문보기

Journal of the Optical Society of Korea, v.12 no.4, 2008년, pp.288 - 297

Kim, Won-Chul (School of Electronic and Electrical Engineering, Hongik University) , Park, Dong-Wook (School of Electronic and Electrical Engineering, Hongik University)

Abstract ▼ AI-Helper

Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

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가설 설정

In this paper, we investigated the potential effects that a temperature change can have on the performances of SRS-based silicon photonic devices from a theoretical standpoint, a topic mostly unaddressed in the past. This issue is of paramount importance for development of field-deployable Raman silicon devices because of the high device temperature expected due to the high beam intensity and narrow crossectional area involved.
The physical origin of the optical phonon taking part in Raman scattering is lattice vibration, and thus the optical phonon’s characteristics depend on the particular propagation direction along the crystal structure. In this paper, we shall assume that the silicon waveguide structure, the basic building block for various types of Raman photonic devices, is of the rib waveguide type directed along the direction (see Fig. 1(a)), a choice which is desirable in two respects. One, this orientation is opted for in most commercial CMOS silicon fabrication, which would render the existing facilities readily available for low-cost production of Raman photonic devices.

제안 방법

In this paper, we have incorporated the temperature dependence of key Raman parameters of bulk silicon, such as the Stokes and anti-Stokes frequency shift and the width of the resonant frequency response, into the parameters of the coupled-mode equations governing the wave propagation of the pump, Stokes and anti-Stokes components in a silicon waveguide structure with Raman gain. The coupled-mode equations were then solved numerically to yield the temperature dependence of a prototypical Raman parametric wavelength converter’s efficiency, a result which we believe is being reported in the literature for the first time.

이론/모형

The coupled-mode equations given by Eq. (6), being analytically intractable in the present form, were solved numerically by using the 4^th-order Runge-Kutta method, with the input pump and Stokes beam power providing the necessary boundary condition at one end.

성능/효과

Our results, in addition to confirming previously published theoretical and experimental results on both the silicon Raman devices in general and Raman wavelength converters, suggest that a temperature increase of ~ 200 K from the room temperature can significantly reduce the conversion efficiency, by as much as 12 dB. The primary reasons for this performance degradation were attributed to a reduction in Raman gain due to frequency-detuning effect and broadening of the SRS gain curve caused by the temperature increase.
In Section III, we demonstrate a specific application of our model by numerically solving the appropriate coupled-mode equations and obtaining the conversion efficiency of a Raman wavelength converter for several different temperatures under various length and phase-matching conditions. The calculation results, among others, predict that the conversion efficiency can be degraded by as much as 12 dB due to a temperature increase of 200 K, which suggests that temperature effects could pose a serious problem that must be dealt with in Raman-based silicon devices. The paper concludes with a brief summary and a closing remark in Section IV.

참고문헌 (24)

R. Soref, “The past, present, and future of silicon photonics,” J. IEEE Quantum Elec., vol. 12, no. 6, pp. 1678-1687, 2006

상세보기
B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Tech., vol. 24, no. 12, pp. 4600-4615, 2006

상세보기
G. T. Reed and A. P. Knights, Silicon Photonics - An Introduction, (John Wiley & Sons, NJ, 2004)
B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” J. IEEE Quantum Elec., vol. 12, no. 3, pp. 412-421, 2006

상세보기
H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccla, “An all-silicon Raman laser,” Nature, vol. 433, no. 20, pp. 292-294, 2005

상세보기
V. Raghunathan, R. Claps, D. Dimitropoulos, and B. Jalali, “Parametric Raman wavelength conversion in scaled silicon waveguide,” J. Lightwave Tech., vol. 23, no. 6, pp. 2904-2102, 2005

상세보기
T. R. Hart, R. L. Aggarwal, and B. Lax, “Temperature dependence of Raman scattering in silicon,” Phys. Rev., vol. 148, no. 2 pp. 845-848, 1966

상세보기
P. G. Klemens, “Anharmonic decay of optical phonons,” Phys. Rev., vol. 148, no. 2 pp. 845-848, 1966

상세보기
J. M. Ralston and R. K. Chang, “Spontaneous-Raman scattering efficiency and stimulated scattering in silicon,” Phys. Rev. B., vol. 2, no. 6, pp. 1858-1862, 1970

상세보기
M. Balkanski, R. F. Wallis, and E. Haro, “Anharmornic effects in light scattering due to optical phonon in silicon,” Phys. Rev. B., vol. 28, no. 4, pp. 1928-1934, 1983

상세보기
A. Compaan and H. J. Trodahl, “Resonance Raman scattering in Si at elevated temperatures,” Phys. Rev. B., vol. 29, no. 2, pp. 793-801, 1984

상세보기
G. P. Agrawal, Nonlinear Fiber Optics, 3rded., (Academic Press, San Diego, 2002)
E. Golovchenko, P. V. Mamyshev, A. N. Pilipetskii, and E. M. Dianov, “Mutual influence of parametric effects and stimulated Raman scattering in optical waveguide,” J. IEEE Quantum Elec., vol. 26, no. 10, pp. 1815-1820, 1990

상세보기
R. Loudon, “The Raman effect in crystals,” Advan. Phys. vol. 13, pp. 423-482, 1964

상세보기
C. Kittel, Introduction to Solid State Physics, 8th ed, (John Wiley & Sons, Hoboken, NJ, 2005)
P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, 3rd ed., (Springer-Verlag, Berlin, 2001)
H. Rong, A. Liu, R. Nicolaescu, M. Paniccia, O. Cohen, and D. Hak, “Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide,” Appl. Phys. Lett., vol. 85, no. 12, pp. 2196-2198, 2004

상세보기
J. Niu, J. Sha, and D. Yang, “Temperature dependence of first-order Raman scattering in silicon nanowire,” Scrip. Mat., vol. 55, pp. 183-186, 2006

상세보기
Y. R. Shen and N. Bloembergen, “Theory of stimulated Brillouin and Raman scattering,” Phys. Rev. vol. 137, no. 6A, pp. A1787-A1805, 1965

상세보기
Y. R. Shen, The Principles of Nonlinear Optics, (John Wiley & Sons, New York, 1984)
R. Claps and D. Dimitropoulos, Y. Han, B. Jalali, “Observation of Raman emission in silicon waveguide at 1.54um,” Opt. Exp., vol. 10. no. 22, pp. 1305-1313, 2002

상세보기
J. Touminen, T. Niemi, and H. Ludvigsen, “Wavelength reference for optical telecommunications based on a temperature-tunable silicon etalon,” Rev. Sci. Instrum., vol. 74, no. 8, pp. 3620-3623, 2003

상세보기
R. W. Boyd, Nonlinear Optics, 2nded., (Academic Press, San Diego, 2003
L. Pavesi and D. J. Lockwood, Silicon Photonics, (Springer-Verlag, Berlin, 2004)

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Analysis of Temperature Effects on Raman Silicon Photonic Devices 원문보기

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Analysis of Temperature Effects on Raman Silicon Photonic Devices 원문보기

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