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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. TC, 통신, v.46 no.12=no.390, 2009년, pp.37 - 43
김영기 (안양대학교 정보통신공학과) , 두석주 (육군3사관학교 전자공학과)
This paper describes a monolithic Darlington-cascade amplifier (DCA) operating at X-band, realized with a 0.35-micron SiGe bipolar process, which provides 45 GHz
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R. G. Meyer and R. A. Blauschild, 'A 4-terminal wide-band monolithic amplifier,' IEEE Journal of Solid-State Circuits, vol. 16, no. 6, pp. 634-638, Dec. 1981
K. W. Kobayashi, R. Esfandiari, M. E. Hafizi, D. C. Streit, A. K. Oki, L. T. Tran, D. K. Umemoto, and M. E. Kim, 'GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz,' IEEE Trans. on Microwave Theory and Techniques, vol. 39, no. 12, pp. 2001-2009, Dec. 1991
J. S. Lee and J. D Cressler, 'Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology,' IEEE Trans. Microwave Theory and Techniques, vol. 54, no. 3, Mar. 2006
N. H. Sheng, W. J. Ho, N. L. Wang, R. L. Pierson, P. M. Asbeck, and W. L. Edwards, 'A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier,' IEEE Microwave and Guided Wave Letters, vol. 1, no. 8, pp. 208-210, Oct. 1991
H. S. Tsai, R. Kopf, R. Meledes, M. Meldes, A. Tate, R. Ryan, R. Hamm, and Y. K. Chen, '90 GHz baseband lumped amplifier,' Electronics Letters, vol. 36, no. 22, pp. 1833-1834, Oct. 2000
M. C. Chiang, S. S. Lu, C. C. Meng, S. A. Yu, S. C. Yang, and Y. J. Chan, "Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops," IEEE Journal of Solid-State Circuits, vol. 37, no. 6, pp. 694-701, Jun. 2002
Y. Suzuki, H. Shimawaki, Y. Amamiya, N. Nagano, T. Niwa, H. Yano and K. Honjo, '50-GHz-bandwidth baseband amplifiers using GaAs-based HBT's," IEEE J. Solid-State Circuits, vol. 33, Issue 8, pp. 1336-1341, Sep. 1998
K. W. Kobayashi, 'A novel E-mode PHEMT linearized Darlington cascode amplifier,' in IEEE Comp. Semic. I.C. Symp., 2006, pp. 153-156
J. S. Lee, Y. G. Kim, E. J. Lee, C. W. Kim, and P. Roblin, 'A 8-GHz SiGe HBT VCO design on a low resistive silicon substrate using GSML,' IEEE Trans. Circuits and Systems-I, vol. 54, no. 10, pp. 2128-2136, Oct. 2007
W. M. L. Kuo, Q. Liang, J. D. Cressler, and M. A. Mitchell, 'An X-band SiGe LNA with 1.36 dB mean noise figure for monolithic phased array transmit-receive radar modules,' in IEEE Radio Frequency Integrated Circuits. Symp. Dig., 2006, pp. 11-13
J. Chen, T. Yoshimasu, W. Hu, H. Liu, N. Itoh, and K. Yonemura, 'An Ultra-Wideband and Low-Power Amplifier Using 0.35-Om SiGe BiCMOS Technology,' in Proc. 2006 International Conference on Communications, Circuits and Systems, Jun. 2006, pp. 2614-2617
W.M. L. Kuo, R. Krithivasan, X. Li, Y. Lu, J. D. Cressler, H. Gustat, and B. Heinemann, 'A low-power, X-band SiGe HBT low-noise amplifier for near-space radar applications,' IEEE Microwave and Guided Wave Letters, vol. 6, no. 9, pp. 520-522, Sep. 2006
D. Barras, F. Ellinger, H. Jackel, and W. Hirt, 'A low supply voltage SiGe LNA for ultra-wideband frontends,' IEEE Microwave and Guided Wave Letters, vol. 14, no. 10, pp. 469-471, Oct. 2004
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