In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to...
In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.
In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.
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제안 방법
In this study, targets for sputtering were fabricated by mixing MgF2 and Zn after heating each of them above the melting point, to create thin films where MgF2 and Zn are physically mixed in an amorphous structure. The targets were fabricated in various composition ratios by varying the mix ratio of MgF2 and Zn to 3:7, 4:6 and 5:5, to observe the variation of the Zn ratio by the composition of the ratio of MgF2 and Zn [9].
The performance of the sealing film with a structure where Zn occupies the pores in MgF2 was improved by forming a film with a sputter on a target mixed with Zn so that the packing density can be raised compared with that of the single inorganic film of MgF2. Its structure, physical characteristics, packing density, WVTR, and optical transmittance were then evaluated to verify its feasibility as a new sealing technology applicable to flexible displays. We also applied the film to emitting unit elements to evaluate their lifetime.
and Zn are physically mixed in an amorphous structure. The targets were fabricated in various composition ratios by varying the mix ratio of MgF2 and Zn to 3:7, 4:6 and 5:5, to observe the variation of the Zn ratio by the composition of the ratio of MgF2 and Zn [9]. Every target had a 2 inch radius and 0.
대상 데이터
A PLED unit device consisting of glass/ITO/PEDOT: PSS/EML/LiF/Al was fabricated to evaluate the characteristics of the passivation thin films. The patterned ITO that was used as the anode was 150 nm thick and had a surface resistance of 12 ohm/square. For the hole injection layer, PEDOT:PSS (VP AI 4083, Baytron) was used to form approximately 40 nm thickness by spin-coating at 3000 rpm for 60 sec and annealing at 150 ℃ for 10 min.
참고문헌 (10)
Y. M. Kim, J. W. Lee, J. H. Jung, K. K. Paek, M. Y. Sung, J. K. Kim and B. K. Ju, IEEE Electron Device Lett. 27, 558 (2006).
V. Tsakova, S. Winkels, and J. W. Schultze, Electrochimica Acta 46, 759 (2000).
M. S. Weaver, L. A. Michalski, K. Rajan, M. A. Rothman, J. A. Silvernail, J. J. Brown, P. E. Burrows, G. L. Graff, M. E. Gross, P. M. Martin, M. Hall, E. Mast, C. Bonham, W. Bennett and M. Zumhoff, Appl. Phys. Lett. 81, 2929 (2002).
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