Choi, Eun-Jeong
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Yim, Ju-Young
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Koo, Ki-Tae
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Seol, Yang-Jo
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Lee, Yong-Moo
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Ku, Young
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Rhyu, In-Chul
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Chung, Chong-Pyoung
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
,
Kim, Tae-Il
(Department of Periodontology and Dental Research Institute, Seoul National University College of Dentistry)
Purpose: It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level ...
Purpose: It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods: Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 $J/cm^2$. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results: At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 $J/cm^2$ (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 $J/cm^2$ energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 $J/cm^2$ energy fluency than in the control. Conclusions: The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.
Purpose: It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods: Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 $J/cm^2$. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results: At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 $J/cm^2$ (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 $J/cm^2$ energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 $J/cm^2$ energy fluency than in the control. Conclusions: The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.
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대상 데이터
An 810-nm gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser (WhiteStarTM, Creation, Verona, Italy) was used. Laser light was delivered through a 600 μm fiber-optic system with 500 mW power output in the continuous wave mode.
데이터처리
The mean values and the standard deviation were calculated for the MTS assay. The data were analyzed by ANOVA with an adhoc Tikey’s test to assess the significance level of the differences among the energy doses. The statistical significance was set at P<0.
이론/모형
, Chicago, USA). The mean values and the standard deviation were calculated for the MTS assay. The data were analyzed by ANOVA with an adhoc Tikey’s test to assess the significance level of the differences among the energy doses.
성능/효과
In conclusion, we demonstrated that the GaAlAs semiconductor diode laser could stimulate proliferation and differentiation of human PDLFs. Within the limits of this study, the optimal energy fluency for the stimulation of PDLFs differentiation was 3.
[16], who discovered that laser irradiation stimulated the proliferation of PDLFs. In their study, a GaAlAs diode laser with a wavelength of 809 nm significantly increased the metabolic activity of PDLFs with a duration of incubation of up to three days. They also reported that laser energy fluencies of 1.
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